Manufacturing method of photomask and recording medium
View Patent ↗A manufacturing method of a photomask according to the embodiment sets an exposure condition applied when a resist is formed into a three-dimensional target shape by using a photomask including a plurality of light-shielding areas. Subsequently, the method sets a hypothetical target shape obtained by correcting a target shape based on a development characteristic of the resist for the exposure condition. Subsequently, the method creates a pattern of the photomask corresponding to the hypothetical target shape. Subsequently, the method simulates a prediction shape of the resist when the pattern is used. Subsequently, the method calculates a cost function related to an error between the prediction shape and the hypothetical target shape. Subsequently, the method adjusts the pattern based on a result of the calculation of the cost function.
1. A manufacturing method of a photomask, the method comprising:
setting an exposure condition applied when a resist is formed into a three-dimensional target shape by using a photomask including a plurality of light-shielding areas;
setting a hypothetical target shape obtained by correcting the target shape based on a development characteristic of the resist for the exposure condition;
creating a pattern of the photomask corresponding to the hypothetical target shape;
simulating a prediction shape of the resist when the pattern is used;
calculating a cost function related to an error between the prediction shape and the hypothetical target shape; and
adjusting the pattern based on a result of the calculation of the cost function.
2. The manufacturing method of claim 1 , wherein
the hypothetical target shape includes a part having a hypothetically negative thickness, and
an auxiliary pattern corresponding to the part is created at an end part of the pattern.
3. The manufacturing method of claim 1 , wherein
the prediction shape is simulated for each of a plurality of the exposure conditions, and the cost function is calculated by using an error between each prediction shape and the hypothetical target shape.
4. The manufacturing method of claim 1 , wherein
the pattern is optimized through calculation of the cost function by using a numerical value optimization algorithm that minimizes the error.
5. The manufacturing method of claim 1 , wherein
the error includes an edge placement error (EPE).
6. The manufacturing method of claim 5 , wherein
the target shape is a stair-shaped, and
the cost function is calculated by adding a shape error obtained by multiplying the root mean square (RMS) of the edge placement error with a first weighting coefficient, and an angle error obtained by multiplying, with a second weighting coefficient, the sum of the root mean square (RMS) of an angle difference between the hypothetical target shape and the prediction shape at each step.
7. The manufacturing method of claim 1 , wherein
the adjustment of the pattern is terminated when a calculated value of the cost function is equal to or less than a threshold, or when the number of times of calculation of the cost function reaches a predetermined number of times.
8. The manufacturing method of claim 1 , wherein
the exposure condition is set based on data indicating the target shape and thickness data of the resist remaining for an exposure amount.
9. The manufacturing method of claim 1 , wherein
the pattern is adjusted by changing at least one of the size and position of the light-shielding area.
10. A non-transitory recording medium recording a computer-readable program, the program comprising:
setting an exposure condition applied when a resist is formed into a three-dimensional target shape by using a photomask including a plurality of light-shielding areas;
setting a hypothetical target shape obtained by correcting the target shape based on a development characteristic of the resist for the exposure condition;
creating a pattern of the photomask corresponding to the hypothetical target shape;
simulating a prediction shape of the resist when the pattern is used;
calculating a cost function related to an error between the prediction shape and the hypothetical target shape; and
adjusting the pattern based on a result of the calculation of the cost function.