Hydrogen sensor including pair of electrodes and metal oxide layer and method of detecting hydrogen with hydrogen sensor
View Patent ↗A hydrogen sensor includes: a first electrode; a second electrode; a metal oxide layer disposed between the first electrode and the second electrode and including a bulk area and a local area; a first insulation film covering the first electrode, the second electrode, and the metal oxide layer and having an opening reaching the second electrode; and a second insulation film being in contact with the second electrode in the opening.
1. A hydrogen sensor comprising:
a first electrode;
a second electrode;
a metal oxide layer disposed between the first electrode and the second electrode, the metal oxide layer including a bulk area and a local area surrounded by the bulk area, a degree of oxygen deficiency of the local area being higher than that of the bulk area;
a first insulation film covering the first electrode, the second electrode, and the metal oxide layer, the first insulation film having an opening reaching the second electrode; and
a second insulation film being in contact with the second electrode in the opening,
wherein:
an upper surface of the local area and an upper surface of the bulk area are in direct contact with a bottom surface of the second electrode, and
a bottom of the local area does not directly contact an upper surface of the first electrode, wherein the bulk area is configured to generate the local area when voltage is applied to the electrodes.
2. The hydrogen sensor according to claim 1 , wherein
the second insulation film has a thickness smaller than that of the first insulation film; and
the second insulation film is further in contact with an upper surface of the first insulation film and an inner peripheral surface of the opening.
3. The hydrogen sensor according to claim 1 , wherein the local area is located inside the opening, when viewed from a direction perpendicular to a surface of the second electrode.
4. The hydrogen sensor according to claim 1 , wherein the second insulation film is a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or an aluminum oxide film.
5. The hydrogen sensor according to claim 1 , wherein
the metal oxide layer includes:
a first metal oxide layer being in contact with the first electrode, a degree of oxygen deficiency of the first metal oxide layer being higher than that of the bulk area; and
a second metal oxide layer being in contact with the second electrode, the second metal oxide layer including the bulk area, and
the local area is in contact with the second electrode and passes through the second metal oxide layer.
6. The hydrogen sensor according to claim 1 , wherein a resistance value of the metal oxide layer reversibly changes based on application of a voltage between first electrode and the second electrode.
7. The hydrogen sensor according to claim 1 , wherein the first insulation film and the second insulation film are made of the same material.
8. The hydrogen sensor according to claim 1 , wherein the second electrode has a catalytic action for releasing hydrogen atoms from hydrogen molecules.
9. The hydrogen sensor according to claim 8 , wherein the second electrode contains platinum or palladium.
10. The hydrogen sensor according to claim 1 , wherein the metal oxide layer contains at least one selected from the group consisting of transition metal oxides and aluminum oxide.
11. The hydrogen sensor according to claim 10 , wherein the metal oxide layer is at least one selected from the group consisting of tantalum oxide, hafnium oxide, zirconium oxide, and aluminum oxide.
12. The hydrogen sensor according to claim 1 , wherein a resistance value between the first electrode and the second electrode is lowered when a predetermined amount of hydrogen molecules come into contact with the second electrode through the second insulation film.
13. The hydrogen sensor according to claim 12 , wherein the second insulation film is a silicon oxide film.
14. The hydrogen sensor according to claim 13 , wherein the silicon oxide film has a thickness of 8.5 nm or less.
15. The hydrogen sensor according to claim 14 , wherein the silicon oxide film has a thickness of 0.5 nm or more.
16. A hydrogen sensor comprising:
a first electrode;
a second electrode;
a metal oxide layer disposed between the first electrode and the second electrode, the metal oxide layer including a bulk area and a local area surrounded by the bulk area, a degree of oxygen deficiency of the local area being higher than that of the bulk area;
a first insulation film opposed to the metal oxide layer across the second electrode; and
a second insulation film covering the first electrode, the second electrode, the metal oxide layer, and the first insulation film, the second insulation film having an opening reaching the first insulation film,
wherein:
an upper surface of the local area and an upper surface of the bulk area are in direct contact with a bottom surface of the second electrode, and
a bottom of the local area does not directly contact an upper surface of the first electrode, wherein the bulk area is configured to generate the local area when voltage is applied to the electrodes.
17. A method of detecting hydrogen with a hydrogen sensor,
the hydrogen sensor comprising:
a first electrode;
a second electrode;
a metal oxide layer disposed between the first electrode and the second electrode, the metal oxide layer including a bulk area and a local area surrounded by the bulk area, a degree of oxygen deficiency of the local area being higher than that of the bulk area;
a first insulation film covering the first electrode, the second electrode, and the metal oxide layer, the first insulation film having an opening reaching the second electrode; and
a second insulation film being in contact with the second electrode in the opening,
wherein an upper surface of the local area and an upper surface of the bulk area are in direct contact with a bottom surface of the second electrode, and
a bottom of the local area does not directly contact an upper surface of the first electrode, wherein the bulk area is configured to generate the local area when voltage is applied to the electrodes,
the method of detecting hydrogen comprising:
allowing gas to come into contact with the second insulation film that is contact with the second electrode; and
detecting a reduction in a resistance value between the first electrode and the second electrode to detect hydrogen gas contained in the gas.
18. A method of detecting hydrogen with a hydrogen sensor,
the hydrogen sensor comprising:
a first electrode;
a second electrode;
a metal oxide layer disposed between the first electrode and the second electrode, the metal oxide layer including a bulk area and a local area surrounded by the bulk area, a degree of oxygen deficiency of the local area being higher than that of the bulk area;
a first insulation film opposed to the metal oxide layer across the second electrode; and
a second insulation film covering the first electrode, the second electrode, the metal oxide layer, and the first insulation film, the second insulation film having an opening reaching the first insulation film,
wherein an upper surface of the local area and an upper surface of the bulk area are in direct contact with a bottom surface of the second electrode, and
a bottom of the local area does not directly contact an upper surface of the first electrode, wherein the bulk area is configured to generate the local area when voltage is applied to the electrodes,
the method of detecting hydrogen comprising:
allowing gas to come into contact with the first insulation film through the opening; and
detecting a reduction in a resistance value between the first electrode and the second electrode to detect hydrogen gas contained in the gas.