Perform read or write on a non-volatile memory having a pending read or write based on temperature thereof

1. A memory system comprising:

a plurality of non-volatile memories;

one or more temperature sensors each of which is disposed in or adjacent to one of the non-volatile memories; and

a controller for the plurality of non-volatile memories, that is configured to

maintain a temperature increase amount and a reference temperature for each of the non-volatile memories,

select one of the non-volatile memories having a pending command as a next memory to be accessed based on a current temperature, the temperature increase amount, and the reference temperature of the selected non-volatile memory,

access the selected non-volatile memory to perform the pending command, and

with respect to the selected non-volatile memory, update the maintained temperature increase amount based on a difference of the current temperature of the selected non-volatile memory before the selected non-volatile memory is accessed and a temperature of the selected non-volatile memory after the selected non-volatile memory is accessed.

2. The memory system according to claim 1 , wherein

the controller is further configured to carry out, with respect to the selected non-volatile memory, calculation of a predicted temperature based on a sum of the current temperature and the temperature increase amount and comparison of the predicted temperature with the reference temperature, and select one of the non-volatile memories as the next memory to be accessed when the reference temperature is greater than the predicted temperature.

3. The memory system according to claim 2 , wherein

the controller is further configured to repeat, with respect to different one of the non-volatile memories, determination of the current temperature, calculation of the predicted temperature, and comparison of the predicted temperature with the reference temperature, until one of the non-volatile memories is selected as the next memory to be accessed, and if not, until processing of the determination, calculation and comparison is carried out for all of the non-volatile memories.

4. The memory system according to claim 3 , wherein

the controller is further configured to access the selected non-volatile memory at a reduced data rate when none of the non-volatile memories is determined as the next memory to be accessed.

5. The memory system according to claim 2 , wherein

the controller maintains, with respect to each of the non-volatile memories, a first temperature increase amount in association with commands of a first type, and a second temperature increase amount in association with commands of a second type,

calculates the predicted temperature based on a sum of the current temperature and the first temperature increase amount when the command is of the first type, and

calculates the predicted temperature based on a sum of the current temperature and the second temperature increase amount when the command is of the second type.

6. The memory system according to claim 2 , wherein

the controller maintains, with respect to each of the non-volatile memories, a first reference temperature in association with commands of a first type, and a second reference temperature in association with commands of a second type,

the first reference temperature is used for the comparison when the command is of the first type, and

the second reference temperature is used for the comparison when the command is of the second type.

7. The memory system according to claim 2 , further comprising:

a second temperature sensor disposed on a board on which the plurality of non-volatile memories and the controller are disposed, wherein

the controller calculates the predicted temperature also based on a signal transmitted from the second temperature sensor.

8. The memory system according to claim 1 , wherein

the controller is further configured to, with respect to the selected non-volatile memory, update the maintained reference temperature based on a relationship between the temperature increase amount and the difference of the current temperature of the selected non-volatile memory before the selected non-volatile memory is accessed and the temperature of the selected non-volatile memory after the selected non-volatile memory is accessed.

9. The memory system according to claim 1 , wherein

the signals are periodically transmitted from the one or more temperature sensors to the controller, and

the controller determines the current temperatures based on signals most recently transmitted from the one or more temperature sensors.

10. The memory system according to claim 1 , wherein

the controller is configured to cause the one or more temperature sensors to transmit the signals to the controller, to determine the current temperatures.

11. The memory system according to claim 1 , wherein

each of the non-volatile memories is a memory chip disposed on a board on which the controller is disposed.

12. The memory system according to claim 1 , wherein

the controller is further configured to set a flag when the command is of a first type and not set the flag when the command is of a second type, select one of the non-volatile memories as the next memory to be accessed regardless of the current temperature, the temperature increase amount, and the reference temperature, when the flag is set, and determine the next memory to be accessed based on the current temperature, the temperature increase amount, and the reference temperature when the flag is not set.

13. An operation method of a memory system including a plurality of non-volatile memories, and one or more temperature sensors each of which is disposed in or adjacent to one of the non-volatile memories, the method comprising:

maintaining for each of the non-volatile memories, a first temperature increase amount in association with commands of a first type, a second temperature increase amount in association with commands of a second type, and a reference temperature; and

responsive to a command from a host,

selecting one of the non-volatile memories,

carrying out, with respect to the selected non-volatile memory, (i) calculation of a predicted temperature based on a sum of the current temperature and the first temperature increase amount when the command is of the first type, and based on a sum of the current temperature and the second temperature increase amount when the command is of the second type, and (ii) comparison of the predicted temperature with the reference temperature of the selected non-volatile memory, wherein the selected non-volatile memory is selected as a next memory to be accessed when the reference temperature is greater than the predicted temperature, and

accessing the selected non-volatile memory to perform the command from the host.

14. The method according to claim 13 , further comprising:

repeating, with respect to different one of the non-volatile memories, determination of the current temperature, calculation of the predicted temperature, and comparison of the predicted temperature with the reference temperature, until one of the non-volatile memories is selected as the next memory to be accessed, and if not, until processing of the determination, calculation and comparison is carried out for all of the non-volatile memories.

15. The method according to claim 13 , further comprising:

maintaining, with respect to each of the non-volatile memories, a first reference temperature in association with commands of a first type, and a second reference temperature in association with commands of a second type, wherein

the first reference temperature is used for the comparison when the command is of the first type, and the second reference temperature is used for the comparison when the command is of the second type.

16. The method according to claim 13 , further comprising:

with respect to the selected non-volatile memory, updating the maintained temperature increase amount based on a difference of the current temperature of the selected non-volatile memory before the selected non-volatile memory is accessed and a temperature of the selected non-volatile memory after the selected non-volatile memory is accessed.

17. The method according to claim 13 , further comprising:

with respect to the selected non-volatile memory, updating the maintained reference temperature based on a relationship between the temperature increase amount and a difference of the current temperature of the selected non-volatile memory before the selected non-volatile memory is accessed and a temperature of the selected non-volatile memory after the selected non-volatile memory is accessed.