Semiconductor memory device and memory system
A semiconductor memory device includes a first word line and a second word line that are adjacent to each other, a first voltage boosting circuit configured to generate a first voltage based on a clock signal, a second voltage boosting circuit configured to generate a second voltage lower than the first voltage based on the clock signal, a counter, and a determination circuit. The counter counts a first number of clock cycles of the clock signal during a first period in which the first voltage boosting circuit generates the first voltage and applies the first voltage to the first word line while the second voltage boosting circuit generates the second voltage and applies the second voltage to the second word line, and a second number of clock cycles of the clock signal during a second period in which the first voltage boosting circuit generates the first voltage while the first word line is electrically disconnected from the first voltage boosting circuit. The determination circuit compares the first number of clock cycles and the second number of clock cycles to determine whether or not a leakage exists in the word lines.
1. A semiconductor memory device comprising:
a first word line and a second word line that are adjacent to each other;
a first voltage boosting circuit configured to generate a first voltage based on a clock signal;
a second voltage boosting circuit configured to generate a second voltage lower than the first voltage based on the clock signal;
a counter configured to count a first number of clock cycles of the clock signal during a first period in which the first voltage boosting circuit generates the first voltage and applies the first voltage to the first word line while the second voltage boosting circuit generates the second voltage and applies the second voltage to the second word line, and a second number of clock cycles of the clock signal during a second period in which the first voltage boosting circuit generates the first voltage while the first word line is electrically disconnected from the first voltage boosting circuit; and
a determination circuit configured to compare the first number of clock cycles and the second number of clock cycles to determine whether or not a leakage exists in the word lines.
2. The device according to claim 1 , further comprising:
a control circuit configured to execute a write operation in multiple loops, each loop including a program operation and a verification operation, wherein
the first word line is a non-selected word line and the second word line is a selected word line, and
one of the first and second periods is a time period during the verification operation.
3. The device according to claim 2 , wherein one of the first and second periods is the time period during the verification operation of an N-th program loop, where N is greater than a threshold number.
4. The device according to claim 2 , wherein the first period is the time period during the verification operation and precedes the second period.
5. The device according to claim 2 , wherein the second period is the time period during the verification operation and precedes the first period.
6. The device according to claim 2 , further comprising:
a control circuit configured to execute a read operation, wherein
the first word line is a non-selected word line and the second word line is a selected word line, and
one of the first and second periods is a time period during the read operation.
7. The device according to claim 6 , wherein the first period is the time period during the read operation and precedes the second period.
8. The device according to claim 6 , wherein the second period is the time period during the read operation and precedes the first period.
9. The device according to claim 1 , wherein the second voltage is a verification voltage for verifying whether or not a target memory cell has a threshold voltage that is greater than the verification voltage.
10. The device according to claim 1 , wherein program voltages increase for subsequent program loops.
11. The device according to claim 1 , wherein program voltages decrease for subsequent program loops.
12. A semiconductor memory device comprising:
a first word line and a second word line that are adjacent to each other;
a first voltage boosting circuit configured to generate a first voltage based on a clock signal;
a second voltage boosting circuit configured to generate a second voltage lower than the first voltage based on the clock signal;
a control circuit configured to execute a write operation in multiple loops, each loop including a program operation and a verification operation;
a counter configured to count a first number of clock cycles of the clock signal and a second number of clock cycles of the clock signal during verification operations of at least two loops of the write operation; and
a determination circuit configured to compare the first number of clock cycles and the second number of clock cycles to determine whether or not a leakage exists in the word lines, wherein
the counter counts the first number of clock cycles during a first period of each respective verification operation in which the first voltage boosting circuit generates the first voltage and applies the first voltage to the first word line while the second voltage boosting circuit generates the second voltage and applies the second voltage to the second word line, and the second number of clock cycles of the clock signal during a second period in of each respective verification operation in which the first voltage boosting circuit generates the first voltage while the first word line is electrically disconnected from the first voltage boosting circuit.
13. The device according to claim 12 , wherein the at least two program loops include two consecutive program loops.
14. The device according to claim 12 , wherein the first period is the time period during the verification operation and precedes the second period.
15. The device according to claim 12 , wherein the second period is the time period during the verification operation and precedes the first period.
16. The device according to claim 12 , wherein the second voltage is a verification voltage for verifying whether or not a target memory cell has a threshold voltage that is greater than the verification voltage.
17. A method of detecting a leakage in word lines of a semiconductor memory device including first and second word lines that are adjacent to each other, said method comprising:
generating a first voltage to be applied to the first word line based on a clock signal;
generating a second voltage to be applied to the second word line based on the clock signal, the second voltage being lower than the first voltage;
counting a first number of clock cycles of the clock signal during a first period the first voltage is generated and applied to the first word line while the second voltage is generated and applied to the second word line;
counting a second number of clock cycles of the clock signal during a second period in which the first voltage is generated while the first word line is in an electrically floating state; and
comparing the first number of clock cycles and the second number of clock cycles to determine whether or not a leakage exists in the word lines.
18. The method according to claim 17 , wherein
the semiconductor memory device includes a control circuit configured to execute a write operation in multiple loops, each loop including a program operation and a verification operation, and
one of the first and second periods is a time period during the verification operation.
19. The method according to claim 17 , wherein the first period is the time period during the verification operation and precedes the second period.
20. The method according to claim 17 , wherein the second period is the time period during the verification operation and precedes the first period.