Storage device that restores data lost during a subsequent data write
A storage device includes a plurality of nonvolatile memories each of which includes first memory cells connected to a first word line and second memory cells connected to a second word line that is adjacent to the first word line, and a controller. The controller is configured to maintain parity data for data written in the first memory cells of the nonvolatile memories, and when carrying out data writing in the second memory cells connected to the second word line in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carrying out restoration of data that were written in the first memory cells of the targeted nonvolatile memory using the parity data.
1. A storage device comprising:
a plurality of nonvolatile memories each of which includes first memory cells connected to a first word line and second memory cells connected to a second word line that is different from and adjacent to the first word line; and
a controller configured to
maintain parity data for data written in the first memory cells of the nonvolatile memories, and
when carrying out data writing in the second memory cells connected to the second word line in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carry out restoration of data that were written in the first memory cells of the targeted nonvolatile memory using the parity data.
2. The storage device according to claim 1 , wherein
the controller is configured to carry out the restoration also using data that were written in the first memory cells of the plurality of nonvolatile memories other than the targeted nonvolatile memory.
3. The storage device according to claim 1 , wherein
the controller is further configured to write data restored through the restoration in memory cells connected to a third word line different from the first and second word lines in the targeted nonvolatile memory.
4. The storage device according to claim 1 , wherein
the controller is further configured to generate the parity data by performing an exclusive OR operation of the data written in the first memory cells of the nonvolatile memories.
5. The storage device according to claim 1 , further comprising:
a volatile memory, wherein
the controller maintains the parity data in the volatile memory.
6. A storage device comprising:
a plurality of nonvolatile memories each of which includes a first memory cell array and a second memory cell array, each memory cell array including first memory cells connected to a first word line; and
a controller configured to
maintain parity data for data written in the first memory cells in the first memory cell arrays of the nonvolatile memories, and
when carrying out data writing in the first memory cells of the first memory cell array and the second memory cell array in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carry out restoration of data that are to be written in the first memory cells of the first memory cell array of the targeted nonvolatile memory using the parity data.
7. The storage device according to claim 6 , wherein
each memory cell array further includes second memory cells connected to a second word line that is different from and adjacent to the first word line, and
the controller is further configured to:
maintain second parity data for data written in the second memory cells in the second memory cell arrays of the nonvolatile memories; and
upon detecting the failure in the data writing in the first memory cells of the second memory cell array in the targeted nonvolatile memory, carry out second restoration of data that were written in the second memory cells of the second memory cell array in the targeted nonvolatile memory.
8. The storage device according to claim 7 , wherein
the controller is further configured to write data restored through the second restoration in memory cells connected to a third word line different from the first and second word lines in the second memory cell array of the targeted nonvolatile memory.
9. The storage device according to claim 7 , wherein
the controller is further configured to generate the second parity data by performing an exclusive OR operation on the data written in the second memory cells in the second memory cell arrays of the nonvolatile memories.
10. The storage device according to claim 7 , wherein
the controller is further configured to generate the parity data by performing an exclusive OR operation on the data written in the first memory cells in the first memory cell arrays of the nonvolatile memories, and an exclusive OR operation on data written in the first memory cells in the second memory cell arrays of the nonvolatile memories.
11. The storage device according to claim 10 , wherein
the controller is configured to generate the parity data by performing an exclusive OR operation on results of the exclusive OR operations.
12. The storage device according to claim 6 , further comprising:
a volatile memory, wherein
the controller maintains the parity data in the volatile memory.
13. The storage device according to claim 6 , wherein
the controller is configured to carry out the restoration also using data that were written in the first memory cells in the first memory cell arrays of the plurality of nonvolatile memories other than the targeted nonvolatile memory.
14. The storage device according to claim 6 , wherein
the controller is further configured to write data restored through the restoration based on the parity data, in memory cells connected to a third word line different from the first line in the first memory cell array of the targeted nonvolatile memory.
15. The storage device according to claim 6 , wherein
the controller is further configured to generate the parity data by performing an exclusive OR operation on the data written in the first memory cells in the first memory cell arrays of the nonvolatile memories.
16. The storage device according to claim 6 , further comprising:
a volatile memory, wherein
the controller maintains the parity data in the volatile memory.
17. The storage device according to claim 6 , wherein
each of the plurality of nonvolatile memories further includes a driver, and
the driver drives the first word line in the first memory cell array and the first word line in the second memory cell array simultaneously.
18. A storage device comprising:
a plurality of nonvolatile memories each of which includes first memory cells connected to a first word line and second memory cells connected to a second word line that is different from and adjacent to the first word line; and
a controller configured to
when carrying out data writing in the second memory cells connected to the second word line in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carry out reading of data that were written in the first memory cells of the targeted nonvolatile memory.
19. The storage device according to claim 18 , wherein
the controller is further configured to maintain parity data for data written in the first memory cells of the nonvolatile memories, and
upon detecting the failure in the data writing in the second memory cells connected to the second word line in the targeted nonvolatile memory, carry out restoration of data that were written in the first memory cells of the targeted nonvolatile memory using the parity data.
20. The storage device according to claim 19 , wherein
the controller is further configured to generate the parity data by performing an exclusive OR operation of the data written in the first memory cells of the nonvolatile memories.