Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
A multilayer substrate can include a silicon layer having an optically finished surface and a chemical vapor deposition (CVD) grown diamond layer on the optically finished surface of the silicon layer. At the interface of the silicon layer and the diamond layer, the optically finished surface of the silicon layer can have a surface roughness (Ra)≤100 nm. A surface of the grown diamond layer opposite the silicon layer can be polished to an optical finish and a light management coating can be applied to the polished surface of the grown diamond layer opposite the silicon layer. A method of forming the multilayer substrate is also disclosed.
1. A multilayer substrate comprising:
a silicon layer having an optically finished surface; and
a multilayer chemical vapor deposition (CVD) grown diamond film on the optically finished surface of the silicon layer including nanodiamond particles between at least one pair of CVD layers, wherein
at an interface of the silicon layer and the diamond film, the optically finished surface of the silicon layer has a surface roughness (Ra)≤100 nm.
2. The multilayer substrate of claim 1 , further including, at the interface of the silicon layer and the diamond film, the optically finished surface of the silicon layer has an Ra≤1 nm.
3. The multilayer substrate of claim 1 , further including, at the interface of the silicon layer and the diamond film, a surface of the diamond film has an Ra no less than the Ra of the optically finished surface of the silicon layer.
4. The multilayer substrate of claim 1 , further including, at the interface of the silicon layer and the diamond film, a grain density of the diamond is ≥10 4 diamond grains/cm 2 .
5. The multilayer substrate of claim 1 , further including, at the interface of the silicon layer and the diamond film, the grain density of the diamond is ≥10 9 diamond grains/cm 2 .
6. The multilayer substrate of claim 1 , further including the silicon layer having a thickness ≥10 μm.
7. The multilayer substrate of claim 1 , further including the silicon layer having a thickness ≥5000 μm.
8. The multilayer substrate of claim 1 , further including the diamond film having a thickness ≤5 μm.
9. The multilayer substrate of claim 1 , further including the diamond film having a thickness ≤2000 μm.
10. The multilayer substrate of claim 1 , further including a largest dimension ≥25.4 mm.
11. The multilayer substrate of claim 1 , further including a largest dimension ≥152.4 mm.
12. The multilayer substrate of claim 1 , further including a total thickness of the silicon layer and the diamond film ≥50 μm.
13. The multilayer substrate of claim 1 , further including a total thickness of the silicon layer and the diamond film ≥5 mm.
14. The multilayer substrate of claim 1 , further including a surface of the diamond film opposite the silicon layer has an Ra≤5 nm.
15. The multilayer substrate of claim 1 , further including a surface of the diamond film opposite the silicon layer has an Ra≤100 nm.
16. The multilayer substrate of claim 1 , further including a light management coating on a surface of the diamond film opposite the silicon layer.
17. The multilayer substrate of claim 1 , wherein diamond crystals on a surface of the diamond film opposite the silicon layer have a Raman peak between 1331.9 and 1332.1 cm −1 , a full width at half maximum (FWMH) of the Raman spectrum between 2.8 and 6.2 cm −1 , or both.
18. The multi-layer substrate of claim 1 , further including a dielectric layer or film between the silicon layer and the diamond film.
19. A multilayer substrate comprising:
a layer of material having an optically finished surface; and
a multilayer chemical vapor deposition (CVD) grown diamond film on the optically finished surface of the silicon layer including nanodiamond particles between at least one pair of CVD layers, wherein
at an interface of the material layer and the diamond film, the optically finished surface of the silicon layer has a surface roughness (Ra)≤100 nm; and
an absolute lattice mismatch between the diamond film and the material layer is ≤4.5 angstrom.