Dual wavelength hybrid device

1. A semiconductor device comprising:

an n-type ohmic contact layer formed above a substrate;

a cathode terminal electrode formed on a first section of the n-type ohmic contact layer;

a first ion implant region formed in a first region of the n-type ohmic contact layer;

a second ion implant region formed on the first ion implant region;

a p-type modulation doped quantum well (QW) structure formed above the n-type ohmic contact layer;

a third ion implant region formed on the second ion implant region, and that encompasses the p-type modulation doped QW structure;

a first injector terminal electrode formed on the third ion implant region;

an n-type modulation doped QW structure formed above the p-type modulation doped QW structure;

a fourth ion implant region formed in a first region of the n-type modulation doped QW structure;

a second injector terminal electrode formed on the fourth ion implant region, and in direct contact with the fourth ion implant region;

a first plurality of layers formed above the n-type modulation doped QW structure;

fifth and sixth ion implant regions formed in a depth within the first plurality of layers;

a p-type ohmic contact layer formed above the n-type modulation doped QW structure; and

a split anode terminal electrode having first and second parts that are formed on first and second sections of the p-type ohmic contact layer, respectively, wherein the first and second parts are separated by a trench that is formed between the first and second parts, wherein the second injector terminal electrode is in the trench such that the second injector terminal electrode is between the first and second parts, and wherein the semiconductor device is configured to operate in at least one of a vertical cavity mode and a whispering gallery mode.

2. The semiconductor device of claim 1 ,

wherein the first plurality of layers includes a first spacer layer and at least one p-type layer.

3. The semiconductor device of claim 2 , further comprising:

a second spacer layer formed on the p-type modulation doped QW structure; and

a second plurality of layers formed on the n-type ohmic contact layer, wherein the second plurality of layers include at least one n-type layer and a third spacer layer.

4. The semiconductor device of claim 1 , further comprising:

a bottom distributed Bragg reflector (DBR) mirror deposited on the substrate, wherein the n-type ohmic contact layer is formed on the bottom DBR mirror.

5. The semiconductor device of claim 1 ,

wherein the first injector terminal electrode is a p-channel injector terminal electrode, and

wherein the second injector terminal electrode is an n-channel injector terminal electrode.

6. The semiconductor device of claim 1 , further comprising:

a coupling waveguide that provides for evanescent coupling of light to and from a resonant cavity of the semiconductor device,

wherein the coupling waveguide comprises a waveguide rib extending tangential to a side surface of the semiconductor device and separated from the side surface by a gap.

7. The semiconductor device of claim 1 ,

wherein the semiconductor device is configured to operate in the whispering gallery mode through a resonant cavity of the semiconductor device that supports propagation of the whispering gallery mode, and

wherein the semiconductor device is configured to receive an in-plane optical signal from a coupling waveguide at a first wavelength and is configured to emit a vertical optical mode signal at a second wavelength.

8. The semiconductor device of claim 7 ,

wherein the p-type modulation doped QW structure is configured to absorb the in-plane optical signal at the first wavelength, and

wherein the n-type modulation doped QW structure is configured to emit the vertical optical mode signal at the second wavelength.

9. The semiconductor device of claim 1 ,

wherein the semiconductor device is configured to operate in the vertical cavity mode, and

wherein the semiconductor device is configured to receive a vertical optical mode signal at a first wavelength and is configured to emit an in-plane optical signal to a coupling waveguide at a second wavelength.

10. The semiconductor device of claim 9 ,

wherein the n-type modulation doped QW structure is configured to absorb the vertical optical mode signal at the first wavelength, and

wherein the p-type modulation doped QW structure is configured to emit the in-plane optical signal to a coupling waveguide at the second wavelength.

11. The semiconductor device of claim 1 ,

wherein the first ion implant region is an oxygen ion implant region, and

wherein the fourth, fifth, and sixth ion implant regions are n-type ion implant regions.

12. The semiconductor device of claim 1 ,

wherein the first and second parts are concentric annular parts.

13. The semiconductor device of claim 1 ,

wherein the trench is in direct contact and above the fourth ion implant region.

14. The semiconductor device of claim 1 ,

wherein the trench extends in the first plurality of layers, and is formed above the n-type modulation doped QW structure.

15. The semiconductor device of claim 1 ,

wherein the fifth and sixth ion implant regions are adjacent to the trench, and are on each side of the trench.