Beryllium oxide integral resistance heaters
An integral resistance heater is disclosed. The heater includes a beryllium oxide (BeO) ceramic body having a first surface and a second surface. A heating element is formed from a metal foil or metallizing paint and is printed onto the top or second surface of the beryllium oxide ceramic body.
1. An integral resistance heater, comprising:
a beryllium oxide (BeO) ceramic body having a first surface and a second surface opposite the first surface, and
a first heating element formed from a refractory metallizing layer and bonded to the first surface of the beryllium oxide ceramic body and
a second heating element formed from the refractory metallizing layer and bonded to the second surface of the beryllium oxide ceramic body,
wherein first and second heating elements comprise electrically conductive outer surfaces coated by a metal plating, wherein the metal plating is configured to prevent oxidation of the first and second heating elements,
wherein the first and second heating elements are connected to first and second heater terminals and operated independently biased; and
a beryllium oxide ceramic top plate and a beryllium oxide ceramic base plate, wherein the beryllium oxide ceramic body is disposed between the top plate and the base plate to form a sandwich structure, and
wherein the top plate includes an exposed top surface to hold a wafer during semiconductor processing.
2. The integral resistance heater of claim 1 , wherein the refractory metallizing layer contains molybdenum or tungsten.
3. The integral resistance heater of claim 2 , wherein the refractory metallizing layer contains MoSi 2 or moly-manganese.
4. The integral resistance heater of claim 1 , further comprising at least one power source connected to the heater terminals for controlling the first and second heating elements.
5. The integral resistance heater of claim 4 , wherein a first power source controls the first heating element and a second power source controls the second heating element, wherein the first and second power sources independently provide a voltage to the first and second heating elements.
6. The integral resistance heater of claim 4 , wherein a first power source controls the first heating element and a second power source controls the second heating element, wherein the first and second power sources cooperatively provide a voltage to the first and second heating elements.
7. The integral resistance heater of claim 1 , wherein the first heating element is printed using screen-printing, roll coating, or air brushing.
8. The integral resistance heater of claim 1 , wherein the BeO ceramic body is in the shape of a square plate, rectangular plate, platen, or disc.
9. The integral resistance heater of claim 1 , wherein the first heating element is patterned in the shape of a spiral, a series of concentric circles, or a zigzag.
10. The integral resistance heater of claim 1 , wherein the metal plating is selected from the group consisting of nickel, gold, silver, and copper.
11. The integral resistance heater of claim 1 , wherein the metal plating is applied by an electrolytic process.
12. The integral resistance heater of claim 1 , wherein the refractory metallizing layer is a foil.
13. The integral resistance heater of claim 1 , wherein the integral resistance heater has a resistance from 13.0Ω to 15.8Ω at an applied voltage of 60 V as measured for a 2″×2″ square.
14. The integral resistance heater of claim 1 , wherein the integral resistance heater has a resistance from 18Ω to 37Ω at an applied voltage from 17.5VAC to about 118VAC as measured for a 7.5″ platen.
15. An integral resistance heater, comprising:
a beryllium oxide (BeO) ceramic body having a first surface and a second surface opposite the first surface, and
a first heating element formed from a refractory metallizing layer and bonded to the first surface of the beryllium oxide ceramic body and
a second heating element formed from the refractory metallizing layer and bonded to the second surface of the beryllium oxide ceramic body,
wherein the first and second heating elements are connected to first and second heater terminals and operated independently biased; and
a beryllium oxide ceramic top plate and a beryllium oxide ceramic base plate,
wherein the beryllium oxide ceramic body is disposed between the top plate and the base plate to form a sandwich structure,
wherein the top plate includes an exposed top surface to hold a wafer during semiconductor processing,
wherein the refractory metallizing layer includes non-metallic components, wherein the non-metallic components diffuse into grain boundaries in the beryllium oxide (BeO) ceramic body, and
wherein first and second heating elements comprise electrically conductive outer surfaces coated by a metal plating, wherein the metal plating is configured to prevent oxidation of the first and second heating elements.
16. The integral resistance heater of claim 15 , wherein the non-metallic components include glass powders.
17. A dual-zone integral resistance heater, comprising:
a beryllium oxide (BeO) ceramic body having a first surface and a second surface opposite the first surface and a thickness there between,
a first heating element formed from a refractory metallizing layer and bonded to the first surface of the beryllium oxide ceramic body, and
a second heating element formed from the refractory metallizing layer and bonded to the second surface of the beryllium oxide ceramic body,
wherein first and second heating elements comprise electrically conductive outer surfaces coated by a metal plating, wherein the metal plating is configured to prevent oxidation of the first and second heating elements,
wherein the first and second heating elements are connected to first and second heater terminals in parallel and independently operated, and the first and second heating elements are configured to provide first and second planar temperature zones separated by a distance equal to the thickness of the beryllium oxide ceramic body, and
a beryllium oxide ceramic top plate disposed adjacent to the second surface, wherein the top plate includes an exposed top surface to hold a wafer during semiconductor processing.
18. The dual-zone integral resistance heater of claim 17 , wherein the metal plating is selected from the group consisting of nickel, gold, silver, and copper.
19. The dual-zone integral resistance heater of claim 17 , wherein the metal plating is applied by an electrolytic process.