Light emitting element, light emitting device, and electronic apparatus
An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.
1. A light emitting element comprising:
a first electrode;
a light emitting function layer that is formed on the first electrode;
an electron injection layer formed on the light emitting function layer; and
a second electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity,
wherein the second electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and
an adsorption layer is formed on the second electrode, a thickness of the adsorption layer being 1 nm or more, and being thinner than a thickness of the second electrode.
2. The light emitting element according to claim 1 ,
wherein a material of the adsorption layer is the same material as the reductive material.
3. A light emitting device,
wherein the light emitting element according to claim 2 is provided in each pixel, and a sealing layer is provided that is formed to cover the light emitting element.
4. An electronic apparatus comprising:
the light emitting device according to claim 3 .
5. The light emitting element according to claim 1 ,
wherein the material of the adsorption layer is Mg or Al.
6. A light emitting device,
wherein the light emitting element according to claim 5 is provided in each pixel, and a sealing layer is provided that is formed to cover the light emitting element.
7. An electronic apparatus comprising:
the light emitting device according to claim 6 .
8. The light emitting element according to claim 1 ,
wherein a light absorption rate of the adsorption layer is 30% or less.
9. A light emitting device,
wherein the light emitting element according to claim 8 is provided in each pixel, and a sealing layer is provided that is formed to cover the light emitting element.
10. An electronic apparatus comprising:
the light emitting device according to claim 9 .
11. The light emitting element according to claim 1 ,
wherein Ag that is contained in the second electrode has atomic ratio of 98% or less.
12. A light emitting device,
wherein the light emitting element according to claim 11 is provided in each pixel, and a sealing layer is provided that is formed to cover the light emitting element.
13. A light emitting device,
wherein the light emitting element according to claim 1 is provided in each pixel, and a sealing layer is provided that is formed to cover the light emitting element.
14. The light emitting device according to claim 13 ,
wherein the sealing layer includes
a first sealing layer,
a flattening layer made from an organic material that is laminated on the first sealing layer, and
a second sealing layer that is laminated on the flattening layer.
15. The light emitting device according to claim 13 ,
wherein arrangement pitch of the pixels is 10 μm or less.
16. An electronic apparatus comprising:
the light emitting device according to claim 13 .