Trench separation diffusion for high voltage device
A manufacturable and economically viable edge termination structure allows a semiconductor device to withstand a very high reverse blocking voltage (for example, 8500 volts) without suffering breakdown. A P type peripheral aluminum diffusion region extends around the bottom periphery of a thick die. The peripheral aluminum diffusion region extends upward from the bottom surface of the die, extending into N- type bulk silicon. A deep peripheral trench extends around the upper periphery of the die. The deep trench extends from the topside of the die down toward the peripheral aluminum diffusion region. A P type sidewall doped region extends laterally inward from the inner sidewall of the trench, and extends laterally outward from the outer sidewall of the trench. The P type sidewall doped region joins with the P type peripheral aluminum diffusion region, thereby forming a separation edge diffusion structure that surrounds the active area of the die.
1. A method of manufacture comprising:
forming a peripheral aluminum diffused region of P type semiconductor material that extends upward into a semiconductor wafer from a bottom semiconductor surface of the wafer, wherein the semiconductor wafer is at least six hundred microns thick and is of N type bulk semiconductor material;
forming a peripheral trench down into the semiconductor wafer from a top semiconductor surface of the wafer, wherein the peripheral trench has vertical inner sidewalls, vertical outer sidewalls, and a bottom, and wherein the peripheral aluminum diffused region and the peripheral trench extend around an active area of the wafer;
forming a sidewall doped region of P type semiconductor material that extends laterally inwardly from the vertical inner sidewalls toward the active area, wherein the sidewall doped region of P type semiconductor material joins the peripheral aluminum region of P type semiconductor material so that P type semiconductor material extends contiguously and vertically a distance of at least six hundred microns from the top semiconductor surface of the wafer to the bottom semiconductor surface of the wafer;
filling the peripheral trench with a solid trench fill material; and
singulating the wafer thereby forming a semiconductor device die having outer edges, wherein the peripheral trench extends along a periphery of the semiconductor device die, wherein an amount of N type bulk semiconductor material is disposed between the peripheral trench and outer edges of the die, and wherein the peripheral aluminum diffused region extends upward from the bottom semiconductor surface a distance of at least one hundred microns into the semiconductor device die.
2. The method of claim 1 , wherein the peripheral aluminum diffused region extends laterally to the outer edges of the semiconductor device die.
3. The method of claim 1 , further comprising:
applying a malleable foil to the bottom semiconductor surface of the wafer prior to the singulating of the wafer.
4. The method of claim 1 , wherein the bottom semiconductor surface of the semiconductor device die is not entirely planar but rather has a shallow peripheral groove.
5. The method of claim 1 , wherein the semiconductor device die comprises a semiconductor device, and wherein the semiconductor device has a forward blocking withstand voltage of at least 8000 volts and also has a reverse blocking withstand voltage of at least 8000 volts.
6. A method of manufacture comprising: forming a peripheral aluminum diffused region of P type semiconductor material that extends upward into a semiconductor wafer from a bottom semiconductor surface of the wafer, wherein the semiconductor wafer is at least six hundred microns thick and is of N type bulk semiconductor material; forming a peripheral trench down into the semiconductor wafer from a top semiconductor surface of the wafer, wherein the peripheral trench has vertical inner sidewalls, vertical outer sidewalls, and a bottom, and wherein the peripheral aluminum diffused region and the peripheral trench extend around an active area of the wafer; forming a sidewall doped region of P type semiconductor material that extends laterally inwardly from the vertical inner sidewalls toward the active area, wherein the sidewall doped region of P type semiconductor material joins the peripheral aluminum region of P type semiconductor material so that P type semiconductor material extends contiguously and vertically a distance of at least eight hundred microns from the top semiconductor surface of the wafer to the bottom semiconductor surface of the wafer; filling the peripheral trench with a solid trench fill material; and singulating the wafer thereby forming a semiconductor device die having outer edges, wherein the peripheral trench extends along a periphery of the semiconductor device die, and wherein an amount of N type bulk semiconductor material is disposed between the peripheral trench and outer edges of the die.
7. The method of claim 6 , wherein the peripheral aluminum diffused region extends laterally to the outer edges of the semiconductor device die.
8. The method of claim 6 , further comprising:
applying a malleable foil to the bottom semiconductor surface of the wafer prior to the singulating of the wafer.
9. The method of claim 6 , wherein the bottom semiconductor surface of the semiconductor device die is not entirely planar but rather has a shallow peripheral groove.
10. The method of claim 6 , wherein the semiconductor device die comprises a semiconductor device, and wherein the semiconductor device has a forward blocking withstand voltage of at least 8000 volts and also has a reverse blocking withstand voltage of at least 8000 volts.
11. A method of manufacture comprising:
forming a peripheral aluminum diffused region of P type semiconductor material that extends upward into a semiconductor wafer from a bottom semiconductor surface of the wafer;
forming a peripheral trench down into the semiconductor wafer from a top semiconductor surface of the wafer, wherein the peripheral trench has vertical inner sidewalls, vertical outer sidewalls, and a bottom, and wherein the peripheral aluminum diffused region and the peripheral trench extend around an active area of the wafer;
forming a sidewall doped region of P type semiconductor material that extends from the vertical inner sidewalls toward the active area;
filling the peripheral trench with a solid trench fill material; and
singulating the wafer thereby forming a semiconductor device die having outer edges, wherein the peripheral trench extends along a periphery of the semiconductor device die, and wherein an amount of N type bulk semiconductor material is disposed between the peripheral trench and outer edges of the die.
12. The method of claim 11 , wherein a diffusion time required to form the peripheral aluminum diffused region of P type semiconductor material is less than two hundred hours.
13. The method of claim 11 , wherein the peripheral trench extends downward from the top semiconductor surface a distance A, and wherein the distance A is more than half of the semiconductor device die thickness.
14. The method of claim 11 , wherein the sidewall doped region of P type semiconductor material joins the peripheral aluminum region of P type semiconductor material so that P type semiconductor material extends from the top semiconductor surface of the wafer to the bottom semiconductor surface of the wafer.
15. The method of claim 11 , wherein the semiconductor wafer is at least six hundred microns thick, and wherein the semiconductor wafer is of N type bulk semiconductor material.
16. The method of claim 11 , wherein the peripheral aluminum diffused region extends upward from the bottom semiconductor surface a distance of at least one hundred microns into the semiconductor device die.
17. The method of claim 11 , wherein the peripheral aluminum diffused region extends laterally to the outer edges of the semiconductor device die.
18. The method of claim 11 , further comprising:
applying a malleable foil to the bottom semiconductor surface of the wafer prior to the singulating of the wafer.
19. The method of claim 11 , wherein the bottom semiconductor surface of the semiconductor device die has a shallow peripheral groove.
20. The method of claim 11 , wherein the semiconductor device die comprises a semiconductor device, wherein the semiconductor device has a forward blocking withstand voltage of at least 8000 volts, and wherein the semiconductor device has a reverse blocking withstand voltage of at least 8000 volts.