Semiconductor device and method of manufacturing the same
In one embodiment, a semiconductor device includes a substrate, and a first shield member provided on or in the substrate. The device further includes a semiconductor chip provided on the first shield member, and a first wire electrically connected to the semiconductor chip and the substrate. The device further includes a second wire electrically or magnetically connected to the first shield member, and a second shield member provided above the semiconductor chip, electrically insulated from the first wire, and electrically or magnetically connected to the second wire.
1. A semiconductor device comprising:
a substrate;
a first shield member provided on an upper face of the substrate;
a semiconductor chip provided on the first shield member;
a first wire electrically connected to the semiconductor chip and the substrate;
a second shield member provided above the semiconductor chip and electrically insulated from the first wire; and
a connecting member electrically or magnetically connected to the first shield member and the second shield member through a pressure bonding process, and having a sheet-like shape, the connecting member being bonded to the first and second shield members without any adhesive.
2. The device of claim 1 , wherein each of the first shield member, the second shield member, and the connecting member is a resin film containing a magnetic material or a conductive material.
3. The device of claim 1 , further comprising, as the connecting member, first and second connecting members provided so as to sandwich the semiconductor chip and the second shield member.
4. The device of claim 1 , wherein:
the semiconductor chip comprises a first lateral face, a second lateral face positioned opposite the first lateral face, a third lateral face positioned between the first lateral face and the second lateral face, and a fourth lateral face positioned opposite the third lateral face, and
the first wire is electrically connected to the semiconductor chip and the substrate on a side of the first or second lateral face, and the connecting member is electrically or magnetically connected to the first and the second shield members on a side of the third or fourth lateral face.
5. The device of claim 1 , wherein:
the semiconductor chip comprises a first lateral face, a second lateral face positioned opposite the first lateral face, a third lateral face positioned between the first lateral face and the second lateral face, and a fourth lateral face positioned opposite the third lateral face, and
the first wire is electrically connected to the semiconductor chip and the substrate on a side of the third or fourth lateral face, and the connecting member is electrically or magnetically connected to the first and the second shield members on a side of the third or fourth lateral face.
6. The device of claim 1 , further comprising:
a third shield member provided below the semiconductor chip;
a second wire electrically or magnetically connected to the third shield member; and
a fourth shield member provided between the semiconductor chip and the second shield member, electrically insulated from the first wire, and electrically or magnetically connected to the second wire.
7. The device of claim 1 , wherein the second shield member is provided above the semiconductor chip via a film, and a portion of the first wire is provided in the film.
8. A method of manufacturing a semiconductor device, the method comprising:
mounting a semiconductor chip on a first shield member provided on an upper face of a substrate;
electrically connecting a first wire to the semiconductor chip and the substrate;
mounting a second shield member above the semiconductor chip so as to be electrically insulated from the first wire; and
electrically or magnetically connecting the first shield member to the second shield member by using a connecting member having a sheet-like shape,
wherein the connecting member is electrically or magnetically connected to the first and second shield members through a pressure bonding process.
9. The method of claim 8 , further comprising providing, as the connecting member, first and second connecting members so as to sandwich the semiconductor chip and the second shield member.
10. The method of claim 8 , wherein the second shield member is mounted above the semiconductor chip via a film formed on the second shield member.
11. The method of claim 10 , wherein the second shield member is mounted above the semiconductor chip such that a portion of the first wire is embedded by the film.
12. The method of claim 8 , further comprising:
electrically or magnetically connecting a second wire to a third shield member positioned below the semiconductor chip; and
mounting a fourth shield member above the semiconductor chip so as to be electrically insulated from the first wire and to be electrically or magnetically connected to the second wire,
wherein the second shield member is mounted on the fourth shield member.
13. The method of claim 12 , wherein the fourth shield member is mounted above the semiconductor chip via a film formed on the fourth shield member.
14. The method of claim 13 , wherein the fourth shield member is mounted above the semiconductor chip such that portions of the first and the second wires are embedded by the film.
15. The method of claim 8 , wherein the connecting member is formed on an upper face of the first shield member and an upper face of the second shield member.
16. A semiconductor device comprising:
a substrate;
a first shield member provided on an upper face of the substrate;
a semiconductor chip provided on the first shield member;
a first wire electrically connected to the semiconductor chip and the substrate;
a second shield member provided above the semiconductor chip and electrically insulated from the first wire; and
a connecting member electrically or magnetically connected to the first shield member and the second shield member and having a sheet-like shape,
wherein the connecting member is provided on an upper face of the first shield member and an upper face of the second shield member.
17. A semiconductor device comprising:
a substrate;
a first shield member provided on an upper face of the substrate;
a semiconductor chip provided on the first shield member;
a first wire electrically connected to the semiconductor chip and the substrate;
a second shield member provided above the semiconductor chip and electrically insulated from the first wire; and
a connecting member electrically or magnetically connected to the first shield member and the second shield member and having a sheet-like shape,
wherein the semiconductor device comprises, as the connecting member, first and second connecting members provided so as to sandwich the semiconductor chip and the second shield member.