Semiconductor device having hall elements formed in a semiconductor substrate and a magnetic body flux concentrator

1. A semiconductor device, comprising:

a semiconductor substrate having a plurality of Hall elements formed therein; and

a magnetic body formed on the semiconductor substrate with a protective layer interposed between the magnetic body and the semiconductor substrate, the magnetic body having a magnetic flux converging function, and the magnetic body having a contour having an outer circumferential portion in vertical cross-section,

at least a part of the outer circumferential portion comprising a curve-shaped portion and a portion continuous from the curve-shaped portion and substantially parallel to the semiconductor substrate, and

a gap being formed between the substantially parallel portion and the protective layer.

2. A semiconductor device according to claim 1 , wherein the curve-shaped portion has an approximate quadrant shape.

3. A semiconductor device according to claim 2 , wherein the approximate quadrant shape in vertical cross-section of the magnetic body has one terminal portion at which a tangential direction is substantially perpendicular to the semiconductor substrate.

4. A semiconductor device according to claim 2 ,

wherein the semiconductor device has a portion parallel to the semiconductor substrate as a portion continuous from one terminal portion of the approximate quadrant shape, which is apart of the outer circumferential portion of the magnetic body in vertical cross-section, and

wherein the parallel portion comprises a portion that at least partially covers a region of the plurality of Hall elements.

5. A semiconductor device according to claim 1 , further comprising a base layer configured to connect the semiconductor substrate and the magnetic body to each other,

wherein the base layer is kept from covering a region of the plurality of Hall elements.