IP Library Granted Patent US 10,418,395
Granted Patent B2
US 10,418,395 · App. 15/459,228 · Granted Sep 17, 2019

Methods of forming image sensor integrated circuit packages

Inventor: Jui Yi Chiu (Taichung, TW)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14618H01L27/14636H01L27/14687H01L2224/11H01L2224/94
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Quick Facts
Patent No.
US 10,418,395
App. No.
15/459,228
Granted
Sep 17, 2019
Kind
B2
Abstract

A method of forming image sensor packages may include performing a molding process. Mold material may be formed either on a transparent substrate in between image sensor dies, or on a removable panel in between transparent substrates attached to image sensor dies. Redistribution layers may be formed before or after the molding process. Mold material may be formed after forming redistribution layers so that the mold material covers the redistribution layers. In these cases, holes may be formed in the mold material to expose solder pads on the redistribution layers. Alternatively, redistribution layers may be formed after the molding process and the redistribution layers may extend over the mold material. Image sensor dies may be attached to a glass or notched glass substrate with dam structures. The methods of forming image sensor packages may result in hermetic image sensor packages that prevent exterior materials from reaching the image sensor.

Claims (17)

1. A method of forming image sensor packages comprising:

attaching a plurality of dam structures to a transparent substrate;

forming a plurality of conductive vias in an image sensor wafer that comprises first and second image sensor dies, wherein each of the first and second image sensor dies has at least one conductive via of the plurality of conductive vias;

separating the first and second image sensor dies;

after separating the first and second image sensor dies, attaching the first image sensor die to at least a first dam structure of the plurality of dam structures and attaching the second image sensor die to at least a second dam structure of the plurality of dam structures;

performing a molding process, wherein performing the molding process comprises forming a mold material in between the first and second image sensor dies;

after performing the molding process, forming a plurality of conductive layers on the first and second image sensor dies, wherein each of the plurality of conductive layers are electrically and mechanically connected to a respective one of the plurality of conductive vias, wherein forming the plurality of conductive layers on the first and second image sensor dies comprises forming at least one conductive layer that extends onto and directly contacts the mold material in between the first and second image sensor dies; and

cutting the transparent substrate and the mold material to form first and second image sensor packages.

2. The method defined in claim 1 , wherein the transparent substrate has first and second opposing surfaces, wherein attaching the plurality of dam structures to the transparent substrate comprises attaching the plurality of dam structures to the first surface of the transparent substrate, and wherein performing the molding process comprises forming the mold material in direct contact with the first surface of the transparent substrate.

3. The method defined in claim 1 , further comprising:

forming a passivation layer over the plurality of conductive layers.

4. The method defined in claim 3 , further comprising:

forming a plurality of solder balls on the plurality of conductive layers.

5. The method defined in claim 1 , wherein performing the molding process comprises forming the mold material in between the at least first dam structure and the at least second dam structure.

6. The method defined in claim 1 , wherein the plurality of conductive layers comprise a plurality of redistribution layers and wherein a first redistribution layer of the plurality of redistribution layers is in direct contact with a first conductive via of the plurality of conductive vias.

7. The method defined in claim 1 , wherein a portion of the at least one conductive layer does not overlap the first image sensor die, and wherein the portion of the at least one conductive layer does not overlap the second image sensor die.

8. The method defined in claim 1 , wherein separating the first and second image sensor dies comprises cutting through the image sensor wafer.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 04481, FRAME 0541 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064072/0459 →
PATENT SECURITY AGREEMENT Recorded Nov 17, 2017
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 044481/0541 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 15, 2017
From: CHIU, JUI YI
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 041580/0449 →
Continuity (2)
Division 14586225 · Dec 30, 2014
Related Publication 20170186792A1 · Jun 29, 2017
Cited By (1)
US 12,419,122