Light-emitting device and power-generating device
A light-emitting device having a light-extraction structure includes: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; and an inorganic-material-based layer disposed between the first electrode and the light-emitting layer or between the second electrode and the light-emitting layer. The inorganic-material-based layer has thickness of 100 nm or more and has conductivity of 10 −6 Ω −1 cm −1 or more and 100 Ω −1 cm −1 or less.
1. A light-emitting device having a light-extraction structure,
the light-emitting device comprising:
a first electrode;
a second electrode;
a light-emitting layer disposed between the first electrode and the second electrode; and
an inorganic-material-based layer disposed between the first electrode and the light-emitting layer or between the second electrode and the light-emitting layer,
wherein the inorganic-material-based layer has thickness of 100 nm or more and has conductivity of 10 −6 Ω −1 cm −1 or more and 100 Ω −1 cm −1 or less,
wherein the inorganic-material-based layer comprises of a zinc-silicon-oxide-based material, and
wherein the zinc-silicon-oxide-based material contains zinc (Zn), silicon (Si), and oxygen (O) at an atomic fraction, according to which Zn/(Zn+Si) is in a range of 0.30 to 0.8.
2. The light-emitting device according to claim 1 , wherein the inorganic-material-based layer contains amorphous oxide.
3. The light-emitting device according to claim 1 , wherein the light-emitting layer is an organic light-emitting layer.
4. The light-emitting device according to claim 1 , wherein the first electrode is a transparent electrode and the second electrode is a reflective electrode.
5. The light-emitting device according to claim 4 , wherein a transparent substrate is disposed on a side of the first electrode, the side being opposite to a side on which the second electrode is disposed.
6. The light-emitting device according to claim 5 ,
wherein the light-extraction structure is constituted by a scattering layer disposed between the first electrode and the transparent substrate, and
wherein the scattering layer includes a base material made of glass and a plurality of scattering substances dispersed inside the base material.
7. The light-emitting device according to claim 1 , wherein the inorganic-material-based layer is disposed between the first electrode and the light-emitting layer.
8. The light-emitting device according to claim 7 , wherein the inorganic-material-based layer is disposed in contact with the first electrode.
9. A power-generating device, comprising:
a first electrode;
a second electrode;
a power-generating layer disposed between the first electrode and the second electrode; and
an inorganic-material-based layer disposed between the first electrode and the power-generating layer or between the second electrode and the power-generating layer,
wherein the inorganic-material-based layer has thickness of 100 nm or more and has conductivity of 10 −6 Ω −1 cm −1 or more and 100 Ω −1 cm −1 or less,
wherein the inorganic-material-based layer comprises of a zinc-silicon-oxide-based material, and
wherein the zinc-silicon-oxide-based material contains zinc (Zn), silicon (Si), and oxygen (O) at an atomic fraction, according to which Zn/(Zn+Si) is in a range of 0.30 to 0.8.