Light-emitting device, display apparatus and lighting apparatus
View Patent ↗A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 kΩ to 100 MΩ.
1. A light-emitting device comprising:
a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate;
a light-emitting layer arranged on at least one of the first electrodes;
a second electrode arranged on the light-emitting layer; and
a bridge layer connecting the first electrodes,
wherein the bridge layer is formed of a material having a resistance that falls within a range of 100 kΩ to 100 MΩ, and
wherein the bridge layer is formed of a material selected from the group consisting of a zinc-tin-silicon-oxygen-based material, a zinc-tin-oxygen-based material, and a zinc-silicon-oxygen-based material.
2. The light-emitting device according to claim 1 ,
wherein the bridge layer is formed of the zinc-silicon-oxygen-based material, the zinc-silicon-oxygen-based material includes zinc (Zn), silicon (Si), and oxygen (O), and a ratio of numbers of atoms of Zn/(Zn+Si) is from 0.3 to 0.95.
3. The light-emitting device according to claim 1 ,
wherein the bridge layer is formed of the zinc-tin-silicon-oxygen-based material, and the zinc-tin-silicon-oxygen-based material includes zinc (Zn), tin (Sn), silicon (Si), and oxygen (O), and
wherein in terms of oxide based on 100 mol % of total of oxides of the bridge layer, SnO 2 is greater than 15 mol % but less than or equal to 95 mol %.
4. The light-emitting device according to claim 3 ,
wherein in terms of oxide based on 100 mol % of total of oxides of the bridge layer, SiO 2 is greater than or equal to 7 mol % but less than or equal to 30 mol %.
5. The light-emitting device according to claim 1 ,
wherein the bridge layer is formed of the zinc-tin-oxygen-based material, and the zinc-tin-oxygen-based material includes zinc (Zn), tin (Sn), and oxygen (O), and
wherein in terms of oxide based on 100 mol % of total of oxides of the bridge layer, SnO 2 is greater than 15 mol % but less than or equal to 95 mol %.
6. The light-emitting device according to claim 1 ,
wherein the bridge layer includes an amorphous oxide.
7. The light-emitting device according to claim 1 ,
wherein the light-emitting layer includes an organic light-emitting layer.
8. The light-emitting device according to claim 1 ,
wherein the bridge layer is arranged so as to be in contact with the first surface of the substrate.
9. The light-emitting device according to claim 1 ,
wherein the bridge layer is configured to function as an electron injection layer.
10. The light-emitting device according to claim 1 ,
wherein at least one of the first electrodes includes a material selected from the group consisting of ITO, SnO 2 , and IZO.
11. The light-emitting device according to claim 1 ,
wherein both the first electrodes have the same polarity.
12. A display apparatus comprising the light-emitting device according to claim 11 .
13. The light-emitting device according to claim 1 ,
wherein the first electrodes have opposite polarities to each other.
14. A lighting apparatus comprising the light-emitting device according to claim 13 .
15. A light-emitting device comprising:
a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate;
a light-emitting layer arranged on at least one of the first electrodes;
a second electrode arranged on the light-emitting layer; and
a bridge layer connecting the first electrodes,
wherein the bridge layer is formed of a material having a resistance that falls within a range of 100 kΩ to 100 MΩ, and
wherein the first electrodes have opposite polarities to each other.