Fingerprint sensing device and method for manufacturing a fingerprint sensing device

1. A capacitive fingerprint sensing device for sensing a fingerprint pattern of a finger, said capacitive fingerprint sensing device comprising:

a protective top layer to be touched by said finger;

a first metal layer comprising a two-dimensional array of sensing structures arranged underneath said protective top layer;

a second metal layer, arranged underneath said first metal layer, comprising a plurality of conductive structures;

a dielectric layer arranged between the first and second metal layers to electrically insulate the first metal layer from the second metal layer, the dielectric layer comprising a low-k material configured to reduce a capacitive coupling between the first and second metal layer, thereby reducing capacitive crosstalk between the sensing structures and the conductive structures, wherein the dielectric constant k of the low-k material dielectric layer is in the range of 1<k<3.3; and

readout circuitry arranged underneath said second metal layer and coupled to each of the electrically conductive sensing structures by means of via connections to receive a sensing signal indicative of a distance between said finger and said sensing structure.

2. The sensing device according to claim 1 , wherein the dielectric layer comprises an organic polymer.

3. The sensing device according to claim 1 , wherein the dielectric layer has thickness of at least 3 μm.

4. The sensing device according to claim 1 , wherein the dielectric layer is Polybenzobisoxazole (PBO), Polyimide or Benzocyclobutene (BCB).

5. The sensing device according to claim 1 , wherein the dielectric layer is provided in the form of a dry film.

6. The sensing device according to claim 1 , comprising a metal structure of said second metal layer arranged directly below a sensing structure of the first metal layer and having an area smaller than the area of the sensing structure.

7. The sensing device according to claim 6 , wherein a thickness and a dielectric constant of the dielectric layer is selected based on a desired capacitance between a sensing structure of the first layer and the underlying metal structure of the second metal layer.

8. A method for manufacturing a fingerprint sensing device, the method comprising;

providing a substrate comprising a plurality of metal structures arranged in a metal layer on the surface of the substrate and fingerprint readout circuitry located within the substrate;

providing a low-k dielectric layer covering the substrate, wherein the dielectric constant k of the low-k material dielectric layer is in the range of 1<k<3.3;

forming via connection openings in the dielectric layer;

depositing a top metal layer on the dielectric layer forming via connections such that each sensing structure is connected to corresponding readout circuitry by means of said via connections; and

patterning the top metal layer to form a two dimensional array of sensing structures, wherein the low-k layer is configured to reduce a capacitive coupling between the first and second metal layer, thereby reducing capacitive crosstalk between the sensing structures and the conductive structures.

9. The method according to claim 8 , wherein the dielectric layer is deposited using spin coating or spray coating.

10. The method according to claim 8 , wherein the dielectric layer is deposited using dry film lamination.

11. The method according to claim 8 , wherein the dielectric layer comprises an organic polymer.

12. The method according to claim 8 , wherein the metal layer is deposited using sputtering.

13. The method according to claim 8 , further comprising electrodeposition of metal to form the top metal layer.

14. The method according to claim 8 , wherein the openings in the dielectric layer are formed using photolithography or direct laser structuring.