Semiconductor memory device and method of manufacturing the same
A semiconductor memory device according to an embodiment comprises: a semiconductor substrate extending in a first direction and a second direction, the first and second directions intersecting each other; a first wiring line disposed above the semiconductor substrate and extending in the first direction; a second wiring line disposed above the semiconductor substrate and extending in a third direction, the third direction intersecting the first direction and the second direction; a variable resistance film disposed at an intersection of the first wiring line and the second wiring line; a first insulating film disposed aligned with the second wiring line in the first direction; a first film disposed between the first wiring line and the first insulating film; and a second film disposed between the first insulating film and the first film and configured from a material different from that of the first film.
1. A semiconductor memory device, comprising:
a semiconductor substrate extending in a first direction and a second direction, the first and second directions intersecting each other,
a first wiring line disposed above the semiconductor substrate and extending in the first direction;
a second wiring line disposed above the semiconductor substrate and extending in a third direction, the third direction intersecting the first direction and the second direction;
a variable resistance film disposed at an intersection of the first wiring line and the second wiring line;
a first insulating film disposed aligned with the second wiring line in the first direction;
a second insulating film disposed between the first wiring line and the first insulating film and aligned with the variable resistance film in the first direction; and
a third insulating film disposed between the first insulating film and the second insulating film and configured from a material different from that of the second insulating film.
2. The semiconductor memory device according to claim 1 , wherein
the variable resistance film contacts the third insulating film in the first direction.
3. The semiconductor memory device according to claim 2 , wherein
the variable resistance film covers a periphery of a side surface along the third direction of the second wiring line, and contacts the third insulating film at a side surface in the first direction of the second wiring line.
4. The semiconductor memory device according to claim 3 , wherein
the third insulating film covers a periphery of a side surface along the third direction of the first insulating film, and contacts the variable resistance film at a side surface facing the second wiring line of the first insulating film.
5. The semiconductor memory device according to claim 2 , wherein
the second insulating film contacts the first wiring line at a surface where the first insulating film and the first wiring line face each other.
6. The semiconductor memory device according to claim 2 , wherein
the variable resistance film contacts the second insulating film in the first direction.
7. The semiconductor memory device according to claim 1 , wherein
the second insulating film is an oxide film, and
the third insulating film is a nitride film.
8. The semiconductor memory device according to claim 1 , wherein
the first insulating film, the second insulating film and the third insulating film are made of different materials.