Substrate for use as mask blank, and mask blank
In a substrate for use as a mask blank including a first main surface, a normal region, a frame-shaped region and inner region are present on the first main surface. The frame-shaped region includes first to fourth corner region and first to fourth middle region. The inner region has a flatness of 100 nm or less, the flatness being determined on the basis of a least-squares plane PP 1 of the normal region. When one of the corner regions is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, the specific relationship regarding the surface profile is satisfied in the n-th corner region and the first and second near middle regions.
1. A substrate having a first main surface and a second main surface, which face each other, wherein:
the substrate is made of a quartz glass containing TiO 2 in an amount of 5 to 10 mass %,
the first main surface has a normal region having a square shape in which each side has a length L 2 in an approximately central part of the first main surface,
the normal region has a frame-shaped region which is a peripheral part of the normal region and an inner region surrounded by the frame-shaped region,
the inner region has a square shape in which each side has a length L 3 of 132 mm,
the frame-shaped region includes: an outer boundary having four sides which coincide with the sides of the square shape of the normal region; and an inner boundary having four sides which coincide with the sides of the square shape of the inner region, the outer boundary having a shape that coincides with a shape formed by enlarging the inner boundary so that the sides of the inner frame are moved parallel outward by 8 mm each,
when the vertexes of the outer boundary of the frame-shaped region are referred to respectively as vertexes A 2 , B 2 , C 2 , and D 2 counterclockwise, the frame-shaped region includes first to fourth corner regions respectively in an each corner part of the frame-shaped region, the first corner region including the vertex A 2 , the second corner region including the vertex B 2 , the third corner region including the vertex C 2 , the fourth corner region including the vertex D 2 , and each corner region having a square shape in which each side has a length of 8 mm,
the frame-shaped region has a first middle region having a square shape in which each side has a length of 8 mm in the middle position between the first corner region and the fourth corner region, a second middle region having a square shape in which each side has a length of 8 mm in the middle position between the first corner region and the second corner region, a third middle region having a square shape in which each side has a length of 8 mm in the middle position between the second corner region and the third corner region, and a fourth middle region having a square shape in which each side has a length of 8 mm in the middle position between the third corner region and the fourth corner region, and
the following conditions (i), (ii), and (iii) are satisfied:
(i) the inner region has a flatness F in1 of 100 nm or less, the flatness being determined on the basis of a least-squares plane of the normal region,
(ii) when one of the corner regions of the frame-shaped region is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, and
when the maximum height and minimum height of the n-th corner region are expressed by H max (C n ) and H min (C n ), respectively, the maximum height and minimum height of the first near middle region are expressed by H max (M 1 ) and H min (M 1 ), respectively, and the maximum height and minimum height of the second near middle region are expressed by H max (M 2 ) and H max (M 2 ), respectively, and the maximum heights and the minimum heights being determined on the basis of the least-squares plane of the normal region,
a maximum height difference ΔD is 75 nm or less with respect to each of n=1 to 4,
wherein the maximum height difference ΔD is represented by expression(1):
Δ D =Max { H max ( C n )− H min ( M 1 ), H max ( C n )− H min ( M 2 ), H max ( M 1 )− H min ( C n ), H max ( M 2 )− H min ( C n )} expression (1)
wherein Max{x 1 , x 2 , x 3 , x 4 } means the maximum value among x 1 to x 4 , and
(iii) the frame-shaped region includes at least one whole contour line therein, and
wherein a contour line present in the frame-shaped region has an approximately square shape in which a space between sides opposite to each other is 132 mm to 148 mm.
2. The substrate for use as a mask blank according to claim 1 , wherein the first main surface has a square shape in which each side has a length L 1 of 152 mm.
3. A mask blank comprising a substrate, and having a first main surface and a second main surface, wherein:
the substrate is made of a quartz glass containing TiO 2 in an amount of 5 to 10 mass %,
the second main surface is a main surface on the side where a layer for circuit pattern is disposed,
the first main surface has a normal region having a square shape in which each side has a length L 2 in an approximately central part of the first main surface,
the normal region has a frame-shaped region which is a peripheral part of the normal region and an inner region surrounded by the frame-shaped region,
the inner region has a square shape in which each side has a length L 3 of 132 mm,
the frame-shaped region includes an outer boundary having four sides which coincide with the sides of the square shape of the normal region and an inner boundary having four sides which coincide with the sides of the square shape of the inner region, the outer boundary having a shape that coincides with a shape formed by enlarging the inner boundary so that the sides of the inner frame are moved parallel outward by 8 mm each,
when the vertexes of the outer boundary of the frame-shaped region are referred to respectively as vertexes A 2 , B 2 , C 2 , and D 2 counterclockwise, the frame-shaped region includes first to fourth corner regions respectively in an each corner part of the frame-shaped region, the first corner region including the vertex A 2 , the second corner region including the vertex B 2 , the third corner region including the vertex C 2 , the fourth corner region including the vertex D 2 , and each corner region having a square shape in which each side has a length of 8 mm,
the frame-shaped region has a first middle region having a square shape in which each side has a length of 8 mm in the middle position between the first corner region and the fourth corner region, a second middle region having a square shape in which each side has a length of 8 mm in the middle position between the first corner region and the second corner region, a third middle region having a square shape in which each side has a length of 8 mm in the middle position between the second corner region and the third corner region, and a fourth middle region having a square shape in which each side has a length of 8 mm in the middle position between the third corner region and the fourth corner region, and
the following conditions (iv), (v), and (vi) are satisfied:
(iv) the inner region has a flatness F in1 of 200 nm or less, the flatness being determined on the basis of a least-squares plane of the normal region,
(v) when one of the corner regions of the frame-shaped region is referred to as an n-th corner region and two middle regions nearest to the n-th corner region are respectively referred to as a first near middle region and a second near middle region, and
when the maximum height and minimum height of the n-th corner region are expressed by H max (C n ) and H min (C n ), respectively, the maximum height and minimum height of the first near middle region are expressed by H max (C n ) and H min (C n ), respectively, and the maximum height and minimum height of the second near middle region are expressed by H max (C n ) and H min (C n ), respectively, the maximum heights and the minimum heights being determined on the basis of the least-squares plane of the normal region,
a maximum height difference ΔD is 125 nm or less with respect to each of n=1 to 4,
wherein the maximum height difference ΔD is represented by expression(1):
Δ D =Max { H max ( C n )− H min ( M 1 ), H max ( C n )− H min ( M 2 ), H max ( M 1 )− H min ( C n ), H max ( M 2 )− H min ( C n )} expression (1)
wherein Max{x 1 , x 2 , x 3 , x 4 } means the maximum value among x 1 to x 4 , and
(vi) the frame-shaped region includes at least one whole contour line therein, and
wherein a contour line present in the frame-shaped region has an approximately square shape in which a space between sides opposite to each other is 132 mm to 148 mm.
4. The mask blank according to claim 3 , wherein the first main surface has a square shape in which each side has a length L 1 of 152 mm.
5. The mask blank according to claim 3 , wherein the layer for circuit pattern comprises a light-shielding film which shields light.
6. The mask blank according to claim 4 , wherein the layer for circuit pattern comprises a light-shielding film which shields light.
7. The mask blank according to claim 3 , wherein the layer for circuit pattern comprises: a light absorbing film which absorbs light; and a reflective film which reflects the light and which is disposed between the absorbing film and the substrate.
8. The mask blank according to claim 4 , wherein the layer for circuit pattern comprises: a light absorbing film which absorbs light; and a reflective film which reflects the light and which is disposed between the absorbing film and the substrate.
9. The mask blank according to claim 3 , wherein the layer for circuit pattern comprises:
a low-reflection film;
an absorbing film which absorbs light and which is disposed between the low reflection film and the second main surface; and
a reflective film which reflects the light and which is disposed between the absorbing film and the second main surface,
wherein a reflectivity of light for inspection of circuit patterns of the low-reflection film is lower than a reflectivity of light for inspection of circuit patterns of the absorbing film.
10. The mask blank according to claim 4 , wherein the layer for circuit pattern comprises;
a low-reflection film;
an absorbing film which absorbs light and which is disposed between the low reflection film and the second main surface; and
a reflective film which reflects the light and which is disposed between the absorbing film and the second main surface,
wherein a reflectivity of light for inspection of circuit patterns of the low-reflection film is lower than a reflectivity of light for inspection of circuit patterns of the absorbing film.
11. The mask blank according to claim 7 , comprising a conductive film on the first main surface.
12. The mask blank according to claim 8 , comprising a conductive film on the first main surface.
13. The mask blank according to claim 9 , comprising a conductive film on the first main surface.
14. The mask blank according to claim 10 , comprising a conductive film on the first main surface.