IP Library Granted Patent US 10,084,115
Granted Patent B2
US 10,084,115 · App. 15/467,679 · Granted Sep 25, 2018

Optoelectronic device and the manufacturing method thereof

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Quick Facts
Patent No.
US 10,084,115
App. No.
15/467,679
Granted
Sep 25, 2018
Kind
B2
Abstract

The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

Claims (26)

1. An optoelectronic device comprising:

a substrate comprising a first side having a first length;

a first contact layer on the substrate; and

a second contact layer between the substrate and the first contact layer,

wherein the second contact layer is not overlapped with the first contact layer in a vertical direction,

wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, and

wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

2. The optoelectronic device of claim 1 , wherein the first distance between the two adjacent contact regions is between 1.5% and 6% of the first length of the substrate.

3. The optoelectronic device of claim 1 , further comprising multiple fingers on the first contact layer opposite to the multiple contact regions.

4. The optoelectronic device of claim 3 , wherein a first contact region of the contact regions is between two adjacent fingers of the multiple fingers.

5. The optoelectronic device of claim 4 , wherein a second distance between the first contact region and one of the adjacent fingers is between 5% and 50% of a third distance between the two adjacent fingers.

6. The optoelectronic device of claim 4 , wherein a second distance between the first contact region and one of the adjacent fingers is between 10% and 40% of a third distance between the two adjacent fingers.

7. The optoelectronic device of claim 4 , wherein a second distance between the first contact region and one of the adjacent fingers is between 10% and 25% of a third distance between the two adjacent fingers.

8. The optoelectronic device of claim 5 , wherein the third distance is between 5% and 15% of the first length.

9. The optoelectronic device of claim 5 , wherein the third distance is between 6% and 13% of the first length.

10. The optoelectronic device of claim 5 , wherein the third distance is between 60 μm and 150 μm both inclusive.

11. The optoelectronic device of claim 5 , wherein the second distance is between 10 μm and 30 μm both inclusive.

12. The optoelectronic device of claim 4 , wherein a second distance between the first contact region and one of the adjacent fingers is between 0.8% and 5% of the first length.

13. The optoelectronic device of claim 4 , wherein a second distance between the first contact region and one of the adjacent fingers is between 1% and 3% of the first length.

14. The optoelectronic device of claim 3 , wherein one of the fingers is a curve or an annular.

15. The optoelectronic device of claim 4 , wherein the first contact region comprises multiple contact areas arranged in multiple columns, and a second distance between two adjacent columns is shorter than a third distance between the first contact region and one of the adjacent fingers.

16. The optoelectronic device of claim 15 , wherein the second distance between two adjacent columns is between 3 μm and 10 μm both inclusive.

17. The optoelectronic device of claim 15 , wherein a ratio of the second distance to the third distance is between 0.1 and 0.7 both inclusive.

18. The optoelectronic device of claim 15 , wherein, a difference between the second distance and the third distance is between 3 μm and 25 μm both inclusive.

19. The optoelectronic device of claim 15 , wherein one of the contact areas has a width between 5 μm and 15 μm both inclusive.

20. The optoelectronic device of claim 1 , wherein the first distance is between 10 μm and 70 μm both inclusive.

Assignments (1)
CHANGE OF NAME Recorded Apr 22, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075513/0783 →