IP Library Granted Patent US 10,383,220
Granted Patent B2
US 10,383,220 · App. 15/468,697 · Granted Aug 13, 2019

Ceramic substrate and method for production thereof

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Quick Facts
Patent No.
US 10,383,220
App. No.
15/468,697
Granted
Aug 13, 2019
Kind
B2
Abstract

A ceramic substrate and a method for production thereof are provided, in which the ceramic substrate includes a composite of: a first ceramic layer including Sr anorthite and Al 2 O 3 or an oxide dielectric with a dielectric constant higher than that of Al 2 O 3 ; and a second ceramic layer including Sr anorthite and cordierite and having a dielectric constant lower than that of the first ceramic layer.

Claims (12)

1. A ceramic substrate comprising:

a first ceramic layer comprising Sr anorthite and at least one component selected from the group consisting of (i) Al 2 O 3 and (ii) an oxide dielectric with a dielectric constant higher than that of Al 2 O 3 ; and

a second ceramic layer comprising Sr anorthite and cordierite and having a dielectric constant lower than that of the first ceramic layer;

wherein at least one of said layers of the ceramic substrate has an fQ product of 10 THz or more at a frequency of 15 GHz.

2. The ceramic substrate according to claim 1 , wherein the absolute value of a difference in thermal expansion coefficient between the first ceramic layer and the second ceramic layer is 1×10 −6 /° C. or less.

3. The ceramic substrate according to claim 1 , wherein the first ceramic layer and the second ceramic layer contains 0.5% by mass or less of B in terms of B 2 O 3 .

4. The ceramic substrate according to claim 1 , wherein the first ceramic layer has a dielectric constant of 7 or more, and the second ceramic layer has a dielectric constant of 6.5 or less.

5. The ceramic substrate according to claim 1 , wherein the first ceramic layer is produced from a composition that contains 40 to 50% by mass of Al in terms of Al 2 O 3 , 30 to 40% by mass of Si in terms of SiO 2 , and 10 to 20% by mass of Sr in terms of SrCO 3 .

6. The ceramic substrate according to claim 1 , wherein the first ceramic layer has a main phase of Al 2 O 3 or the oxide dielectric with a dielectric constant higher than that of Al 2 O 3 , and the second ceramic layer has a main phase of Sr anorthite.

7. The ceramic substrate according to claim 1 , wherein the first ceramic layer has an fQ product of at least 13 THz.

8. The ceramic substrate according to claim 1 , wherein the second ceramic layer has an fQ product of at least 11 THz.

9. The ceramic substrate according to claim 1 , wherein the first ceramic layer has an fQ product of at least 13 THz and the second ceramic layer has an fQ product of at least 11 THz.

Assignments (2)
CHANGE OF NAME Recorded Dec 27, 2023
From: HITACHI METALS, LTD.
To: PROTERIAL, LTD.
Reel/Frame 066130/0563 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 24, 2017
From: NAKAJIMA, HIROKAZU; SAKAGUCHI, KOHEI
To: HITACHI METALS, LTD.
Reel/Frame 041734/0013 →