Pattern-forming method
View Patent ↗A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate. A first composition is applied on lateral faces of the recessed portions of the base pattern, to form a coating. The first composition includes a first polymer which includes on at least one end of a main chain thereof a group capable of interacting with the base pattern. A surface of the coating is contacted with a highly polar solvent. The recessed portions are filled with a second composition. The second composition includes a second polymer which is capable of forming a phase separation structure through directed self-assembly. Phase separation is permitted in the second composition to form phases. A part of the phases is removed to form a miniaturized pattern. The substrate is etched directly or indirectly using the miniaturized pattern as a mask.
1. A pattern-forming method comprising:
forming a base pattern having a recessed portions on a front face side of a substrate directly or via other layer;
applying a first composition on lateral faces of the recessed portions of the base pattern to form a coating, the first composition comprising a first polymer and a solvent, the first polymer comprising on at least one end of a main chain thereof a group capable of interacting with the base pattern;
contacting a surface of the coating with a highly polar solvent;
filling the recessed portions, after the contacting of the highly polar solvent, with a second composition comprising a second polymer and a solvent, the second polymer being capable of forming a phase separation structure through directed self-assembly;
permitting phase separation in the second composition to form phases after the filling of the second composition;
removing a part of the phases, after the phase separation, to form a miniaturized pattern; and
etching the substrate directly or indirectly using the miniaturized pattern as a mask.
2. The pattern-forming method according to claim 1 , wherein the highly polar solvent is water, methanol or ethanol.
3. The pattern-forming method according to claim 1 , wherein the second polymer is a block copolymer.
4. The pattern-forming method according to claim 3 , wherein the block copolymer is a styrene-(meth)acrylic acid ester block copolymer.
5. The pattern-forming method according to claim 1 , wherein the first polymer comprises a structural unit derived from a substituted or unsubstituted styrene.