Semiconductor device and method of manufacturing thereof

1. A method of manufacturing an electronic device, the method comprising:

forming a conductive shielding member on a top side of a carrier, wherein no portion of the conductive shielding member is pre-formed prior to said forming the conductive shielding member on the top side of the carrier;

attaching a first electronic component to the top side of the carrier;

attaching a second electronic component to the top side of the carrier, wherein the conductive shielding member is positioned directly laterally between the first electronic component and the second electronic component;

forming an encapsulating material that covers at least a portion of the top side of the carrier, at least a portion of a lateral side of the first electronic component, at least a portion of a lateral side of the second electronic component, and at least a portion of a lateral side of the conductive shielding member;

forming a signal distribution structure on a respective bottom side of each of the encapsulating material, the first electronic component, the second electronic component, and the conductive shielding member; and

forming an electromagnetic interference (EMI) shield layer on a top side of the encapsulating material and on a top side of the conductive shielding member, wherein the EMI shield layer is electrically coupled to the top side of the conductive shielding member.

2. The method of claim 1 , comprising removing at least a portion of the carrier before said forming a signal distribution structure.

3. The method of claim 1 , wherein said forming the conductive shielding member on the top side of the carrier comprises:

forming a seed layer on the top side of the carrier; and

electroplating a conductive layer on the seed layer.

4. The method of claim 1 , comprising forming at least a plurality of additional conductive shielding members on the top side of the carrier, wherein the conductive shielding member and the additional conductive shielding members are positioned in a row, and wherein said forming the EMI shield layer comprises forming the EMI shield layer directly on respective top sides of the conductive shielding member and each of the plurality of additional conductive shielding members.

5. The method of claim 1 , wherein the conductive shielding member is solder-free.

6. The method of claim 5 , wherein the conductive shielding member is connected to the signal distribution structure without the use of solder, and the conductive shielding member is connected to the EMI shield layer without the use of solder.

7. The method of claim 1 , wherein:

said forming an encapsulating material comprises forming the encapsulating material to cover a top side of the first electronic component, a top side of the second electronic component, and a top side of the conductive shielding member; and

further comprising, prior to said forming the EMI shield layer, thinning the encapsulating material to expose at least the top side of the conductive shielding member.

8. The method of claim 1 , wherein said forming the EMI shield layer comprises forming the EMI shield layer on at least lateral sides of the encapsulating material and lateral sides of the signal distribution structure, without forming any of the EMI shield layer directly between the encapsulating material and the signal distribution structure.

9. The method of claim 1 , wherein:

said attaching the first electronic component comprises attaching a first component terminal of the first electronic component to the top side of the carrier;

said attaching the second electronic component comprises attaching a second component terminal of the second electronic component to the top side of the carrier; and

the method comprises removing the carrier,

wherein after said removing the carrier, a respective bottom surface of each of the first component terminal, the second component terminal, the first conductive shielding member, and the encapsulating material are coplanar.

10. The method of claim 1 , wherein:

the encapsulating material comprises a plurality of lateral sides, each of which coplanar with a respective lateral side of the signal distribution structure; and

said forming the EMI shield layer comprises forming a continuous metal layer on at least lateral sides of the encapsulating material and lateral sides of the signal distribution structure.

11. A method of manufacturing an electronic device, the method comprising:

forming a conductive shielding member, said conductive shielding member comprising a bottom-side seed layer part and a conductive layer part formed on the bottom-side seed layer part, said forming a conductive shielding member comprising plating the conductive layer part directly on the bottom-side seed layer part, and removing seed layer material laterally surrounding the bottom-side seed layer part;

mounting a first component comprising a first bottom-side component terminal;

mounting a second component comprising a second bottom-side component terminal,

wherein the conductive shielding member is positioned directly laterally between the first electronic component and the second electronic component;

forming an encapsulating material that covers at least a portion of a lateral side of the first electronic component, at least a portion of a lateral side of the second electronic component, and at least a portion of a lateral side of the conductive shielding member;

forming a signal distribution structure on a respective bottom side of each of the encapsulating material, the first electronic component, the second electronic component, and the conductive shielding member; and

forming an electromagnetic interference (EMI) shield layer on a top side of the encapsulating material and on a top side of the conductive shielding member, wherein the EMI shield layer is electrically coupled to the top side of the conductive shielding member.

12. The method of claim 11 , wherein:

said forming the conductive shielding member comprises forming the conductive shielding member on a top side of a carrier, wherein no portion of the conductive shielding member is pre-formed prior to said forming the conductive shielding member on the top side of the carrier;

said mounting the first component comprises attaching the first bottom-side component terminal to the carrier;

said mounting the second component comprises attaching the second bottom-side component terminal to the carrier; and

said forming the encapsulating material comprises forming the encapsulating material that covers at least a portion of the top side of the carrier.

13. The method of claim 12 , comprising removing at least a portion of the carrier prior to said forming a signal distribution structure.

14. The method of claim 11 , wherein said forming the EMI shield layer comprises forming the EMI shield layer directly on lateral sides of the signal distribution structure but not directly on top and bottom sides of the signal distribution structure.

15. The method of claim 11 , wherein the seed layer is laterally surrounded by the encapsulating material.

16. The method of claim 11 , wherein:

the conductive shielding member is solder-free;

the conductive shielding member is connected to the signal distribution structure without the use of solder or adhesive; and

the first conductive shielding member is connected to the EMI shield layer without the use of solder.

17. The method of claim 11 , wherein:

said forming the encapsulating material comprises forming the encapsulating material to cover a top side of the first electronic component, a top side of the second electronic component, and a top side of the conductive shielding member; and

the method comprises, prior to said forming the EMI shield layer, thinning the encapsulating material to expose at least the top side of the conductive shielding member.

18. The method of claim 11 , wherein:

the encapsulating material comprises a plurality of lateral sides, each of which coplanar with a respective lateral side of the signal distribution structure; and

said forming the EMI shield layer comprises surrounding all lateral sides of the encapsulating material and of the signal distribution structure with a continuous layer of metal of the EMI shield layer.