GATE ELECTRODE STRUCTURE AND HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING THE SAME
A gate electrode structure and a high voltage semiconductor device having the same are disclosed. The gate electrode structure includes a gate insulation layer pattern disposed on a substrate, a gate electrode disposed on the gate insulating layer pattern and having at least one opening at a first side portion thereof, and at least one insulating pattern disposed in the at least one opening. The high voltage semiconductor device includes a drift region disposed in the substrate adjacent to the first side portion of the gate electrode, a drain region electrically connected with the drift region, and a source region disposed in the substrate adjacent to a second side portion of the gate electrode.
1 . A gate electrode structure comprising:
a gate insulation layer pattern disposed on a substrate, the substrate having a drift region;
a gate electrode disposed on the gate insulating layer pattern such that the gate insulating layer pattern is positioned between the gate electrode and the drift region, the gate electrode having at least one opening at a first side portion thereof configured to reduce a capacitance between the gate electrode and the drift region; and
at least one insulating pattern disposed in the at least one opening.
2 . The gate electrode structure of claim 1 , further comprising gate spacers disposed on side surfaces of the gate electrode.
3 . The gate electrode structure of claim 2 , wherein the at least one insulating pattern is made of the same material as the gate spacers.
4 . The gate electrode structure of claim 1 , wherein the gate electrode has at least one second opening disposed at a second side portion opposite to the first side portion.
5 . The gate electrode structure of claim 4 , further comprising at least one second insulating pattern disposed in the at least one second opening.
6 . The gate electrode structure of claim 1 , wherein the at least one opening has a slit shape extending along a first side surface of the gate electrode.
7 . The gate electrode structure of claim 1 , wherein the gate electrode has a plurality of openings disposed along a first side surface of the gate electrode and a plurality of insulating patterns is each disposed in the plurality of the openings.
8 . A high voltage semiconductor device comprising:
a gate insulation layer pattern disposed on a substrate;
a gate electrode disposed on the gate insulating layer pattern;
a drift region disposed in the substrate adjacent to a first side portion of the gate electrode such that the gate insulating layer pattern is arranged between the gate electrode and the drift region;
a drain region electrically connected with the drift region; and
a source region disposed in the substrate adjacent to a second side portion of the gate electrode,
wherein the gate electrode has at least one opening disposed at the first side portion and at least one insulating pattern is disposed in the at least one opening, such that a capacitance between the gate electrode and the drift region is reduced.
9 . The high voltage semiconductor device of claim 8 , wherein the at least one insulating pattern is disposed on the gate insulating layer pattern.
10 . The high voltage semiconductor device of claim 8 , wherein the at least one insulating pattern is disposed over an edge portion of the drift region.
11 . The high voltage semiconductor device of claim 8 , further comprising gate spacers disposed on side surfaces of the gate electrode.
12 . The high voltage semiconductor device of claim 11 , wherein the at least one insulating pattern is made of the same material as the gate spacers.
13 . The high voltage semiconductor device of claim 8 , wherein the at least one opening has a slit shape extending along a first side surface of the gate electrode.
14 . The high voltage semiconductor device of claim 8 , wherein the gate electrode has a plurality of openings disposed along a first side surface of the gate electrode and a plurality of insulating patterns is each disposed in the plurality of the openings.
15 . A high voltage semiconductor device comprising:
a gate insulation layer pattern disposed on a substrate;
a gate electrode disposed on the gate insulating layer pattern;
a first drift region disposed in the substrate adjacent to a first side portion of the gate electrode such that the gate insulating layer pattern is arranged between the gate electrode and the first drift region at the first side portion;
a second drift region disposed in the substrate adjacent to a second side portion of the gate electrode such that the gate insulating layer pattern is arranged between the gate electrode and the second drift region at the second side portion;
a drain region electrically connected with the first drift region; and
a source region electrically connected with the second drift region,
wherein the gate electrode has at least one first opening disposed at the first side portion and at least one second opening disposed at the second side portion;
at least one first insulating pattern is disposed in the at least one first opening, such that a capacitance between the gate electrode and the first drift region is reduced; and
at least one second insulating pattern is disposed in the at least one second opening, such that a capacitance between the gate electrode and the second drift region is reduced.
16 . The high voltage semiconductor device of claim 15 , wherein the first and second insulating patterns are disposed on the gate insulating layer pattern.
17 . The high voltage semiconductor device of claim 15 , wherein the at least one first insulating pattern is disposed over an edge portion of the first drift region, and the at least one second insulating pattern is disposed over an edge portion of the second drift region.
18 . The high voltage semiconductor device of claim 15 , further comprising gate spacers disposed on side surfaces of the gate electrode.
19 . The high voltage semiconductor device of claim 18 , wherein the first and second insulating patterns are made of the same material as the gate spacers.
20 . The high voltage semiconductor device of claim 15 , wherein the drain and source regions are disposed in the first and second drift regions, respectively.