IP Library Granted Patent US 10,574,202
Granted Patent B2
US 10,574,202 · App. 15/472,461 · Granted Feb 25, 2020

Electronic package including cavity formed by removal of sacrificial material from within a cap

Inventors: Atsushi Takano (Osaka-Fu, JP); Mitsuhiro Furukawa (Hyogo-Ken, JP); Ichiro Kameyama (Osaka-Fu, JP); Tetsuya Uebayashi (Osaka-Fu, JP)
Assignee: SKYWORKS FILTER SOLUTIONS JAPAN CO., LTD.
H03H3/0072B81B1/002B81C1/00087H03H9/171H03H9/19B81B2201/0271B81B2203/0353B81B2207/09B81C2201/013H03H9/54H03H9/64
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Quick Facts
Patent No.
US 10,574,202
App. No.
15/472,461
Granted
Feb 25, 2020
Kind
B2
Abstract

A method of fabricating an electronic component includes forming a functional unit on a main surface of a substrate, forming a sacrificial layer covering the functional unit on the main surface, forming a cap layer covering the sacrificial layer, the cap layer forming a periphery enclosing the cavity on the main surface, forming holes through the cap layer, forming a cavity by removing the sacrificial layer using a wet etching process through the holes, the holes including a peripheral hole communicating an inside of the cavity with an outside of the cavity along the main surface, and forming a first resin layer covering the cap layer and the main surface.

Claims (38)

1. A method of manufacturing an electronic component, the method comprising:

forming a functional unit on a main surface of a substrate;

forming a sacrificial layer covering the functional unit on the main surface;

forming a cap layer covering the sacrificial layer;

forming holes through the cap layer;

removing the sacrificial layer using a wet etching process through the holes to form a cavity, the cap layer forming a periphery enclosing the cavity on the main surface, the holes including peripheral holes communicating between inside the cavity and outside the cavity along the main surface on the periphery; and

forming a resin layer covering the cap layer and the main surface, the resin layer including one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores.

2. The method of claim 1 wherein the cap layer includes a rectangular periphery, the peripheral holes being formed at each one of four corners of the rectangular periphery.

3. The method of claim 1 wherein the sacrificial layer includes organic resin.

4. The method of claim 3 wherein the organic resin includes photosensitive novolac.

5. The method of claim 1 wherein the cap layer includes silicon dioxide formed using a tetraethyl orthosilicate chemical vapor deposition (TEOS-CVD) process.

6. The method of claim 5 wherein the cap layer includes carbon.

7. The method of claim 1 wherein the functional unit is one of a surface acoustic wave (SAW) element or a film bulk acoustic resonator (FBAR) including a mechanically movable portion.

8. The method of claim 1 wherein the substrate includes dielectric material.

9. A method of manufacturing an electronic device, the method comprising:

preparing an electronic component by forming a sacrificial layer covering a functional unit formed on a main surface of a first substrate;

forming a cap layer covering the sacrificial layer;

forming holes through the cap layer;

forming a cavity by removing the sacrificial layer using a wet etching process through the holes, the cap layer forming a periphery enclosing the cavity on the main surface, the holes including a peripheral hole communicating an inside of the cavity with an outside of the cavity along the main surface on the periphery;

forming a resin layer covering the cap layer and the main surface, the resin layer including one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores; and

mounting the electronic component to a second substrate to form the electronic device.

10. An electronic component comprising:

a substrate including a main surface on which a functional unit is formed;

a cap layer defining a cavity enclosing and covering the functional unit, the cap layer forming a periphery enclosing the cavity on the main surface, the cap layer being provided with holes, the holes including peripheral holes communicating an inside of the cavity with an outside of the cavity along the main surface on the periphery; and

a resin layer covering the cap layer and the main surface, the resin layer including one or more bores and a solder layer having a thickness less than a thickness of the resin layer disposed within the one or more bores.

11. The electronic component of claim 10 wherein the cap layer includes a rectangular periphery, the peripheral holes being formed at each one of four corners of the rectangular periphery.

12. The electronic component of claim 10 wherein the cap layer includes silicon dioxide containing carbon.

13. The electronic component claim 10 wherein the functional unit is one of a surface acoustic wave (SAW) element or a film bulk acoustic resonator (FBAR) including a mechanically movable portion.

14. The electronic component of claim 10 wherein the substrate includes dielectric material.

15. An electronic device comprising:

a first substrate;

an electronic component including a second substrate having a main surface on which a functional unit is formed, a cap layer defining a cavity enclosing and covering the functional unit, and a first resin layer covering the cap layer and the main surface, the first resin layer including one or more bores and a solder layer having a thickness less than a thickness of the first resin layer disposed within the one or more bores, the cap layer forming a periphery enclosing the cavity on the main surface, the cap layer being provided with holes, the holes including a peripheral hole communicating an inside of the cavity with an outside of the cavity along the main surface on the periphery; and

a second resin layer sealing the first substrate and the electronic component.

16. The electronic device of claim 15 wherein the functional unit is one of a surface acoustic wave (SAW) element or a film bulk acoustic resonator (FBAR).

17. The electronic device of claim 15 wherein the second substrate includes a piezoelectric material.

18. The electronic device of claim 15 wherein the cap layer includes silicon dioxide and between zero and 20 atomic percent carbon relative to silicon in the silicon dioxide.

19. The electronic device of claim 15 wherein the cap layer further includes perforations formed in a ceiling of the cap layer.

20. The electronic device of claim 15 wherein the solder layer is in electrical communication with the functional unit through a metal layer disposed on the main surface of the second substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 31, 2017
From: TAKANO, ATSUSHI; FURUKAWA, MITSUHIRO; KAMEYAMA, ICHIRO; UEBAYASHI, TETSUYA
To: SKYWORKS FILTER SOLUTIONS JAPAN CO., LTD.
Reel/Frame 043144/0227 →
Continuity (2)
Provisional Application 62317240 · Apr 1, 2016
Related Publication 20170288627A1 · Oct 5, 2017
Cited By (1)
US 12,407,315