Semiconductor optoelectronic device with an insulative protection layer and the manufacturing method thereof

1. A semiconductor device comprising:

a heat dispersion substrate;

a first connecting layer on the heat dispersion substrate;

a diode stack structure comprising a protection layer and a second connecting layer on the protection layer, wherein the protection layer is on the first connecting layer;

a light-emitting structure on the diode stack structure, wherein the light-emitting structure comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and

a first electrode electrically connected to the diode stack structure and the light-emitting structure.

2. The semiconductor device according to claim 1 , wherein the protection layer is composed of conductive materials.

3. The semiconductor device according to claim 1 , wherein the second conductivity type semiconductor layer is between the second connecting layer and the active layer, and the conductivity type of the protecting layer is different from that of the second conductivity type semiconductor layer.

4. The semiconductor device according to claim 1 , wherein the protection layer comprises GaN doped with an impurity.

5. The semiconductor device according to claim 1 , wherein the protection layer comprises a single layer comprising III-V group material.

6. The semiconductor device according to claim 1 , wherein the protection layer comprises a zinc oxide doped with an impurity.

7. The semiconductor device according to claim 1 , further comprising a second electrode on an exposed surface of the second conductivity type semiconductor layer.

8. The semiconductor device according to claim 1 , wherein the first electrode covers a side wall of the active layer, a side wall of the second conductivity type semiconductor layer, a side wall of the second connecting layer, and a side wall of the protecting layer.

9. The semiconductor device according to claim 1 , wherein the diode stack structure further comprises an adhesive layer under the second connecting layer, wherein the adhesive layer comprising an exposed surface.

10. The semiconductor device according to claim 9 , wherein the first electrode contacts the exposed surface of the adhesive layer.

11. The semiconductor device according to claim 9 , wherein the adhesive layer comprises ITO or ZnO.

12. The semiconductor device according to claim 9 wherein the diode stack structure is electrically connected to the light-emitting structure in anti-parallel.

13. The semiconductor device according to claim 12 , wherein the protection layer comprises GaN doped with an impurity.

14. The semiconductor device according to claim 13 , wherein the first electrode covers a side wall of the active layer, a side wall of the second conductivity type semiconductor layer, a side wall of the second connecting layer, and a side wall of the protecting layer.

15. The semiconductor device according to claim 12 , further comprising a reflection layer under the adhesive layer.

16. The semiconductor device according to claim 1 , further comprising a reflection layer under the protection layer.

17. The semiconductor device according to claim 16 , wherein the reflection layer comprising aluminum, silver, or other high reflectivity materials.

18. The semiconductor device according to claim 1 , wherein the first connecting layer comprises polymer material, oxide, nitride, or diamond.

19. The semiconductor device according to claim 1 , wherein the first connecting layer comprises soldering tin, low temperature metal, and metal silicide.

20. The semiconductor device according to claim 1 , wherein the diode stack structure is electrically connected to the light-emitting structure in anti-parallel.