Organic EL display panel
An organic EL display panel including: a substrate; display elements over the substrate; a first sealing layer over the display elements; a buffer layer covering the first sealing layer; and a second sealing layer covering the buffer layer. The first sealing layer, the buffer layer, and the second sealing layer are each made of a silicon nitride film, and a peak amount of ammonia gas desorbing from the silicon nitride film of the buffer layer within a predetermined temperature range is greater than one hundred times and smaller than one thousand times a peak amount of ammonia gas desorbing from each of the silicon nitride film of the first sealing layer and the silicon nitride film of the second sealing layer within the predetermined temperature range.
1. An organic EL display panel comprising:
a substrate;
display elements over the substrate;
a first sealing layer over the display elements;
a buffer layer covering the first sealing layer; and
a second sealing layer covering the buffer layer, wherein
the first sealing layer, the buffer layer, and the second sealing layer are each made of a silicon nitride film, and
a peak amount of ammonia gas desorbing from the silicon nitride film of the buffer layer within a predetermined temperature range is greater than one hundred times and smaller than one thousand times a peak amount of ammonia gas desorbing from each of the silicon nitride film of the first sealing layer and the silicon nitride film of the second sealing layer within the predetermined temperature range.
2. The organic EL display panel of claim 1 , wherein
the buffer layer has a thickness that is at least three times and at most fifty times a thickness of each of the first sealing layer and the second sealing layer.
3. The organic EL display panel of claim 1 , wherein
the thickness of the buffer layer is at least 2 μm and at most 10 μm.
4. A method of manufacturing an organic EL display panel, the method comprising:
forming display elements on a substrate;
sealing the display elements with a first sealing layer;
covering the first sealing layer with a buffer layer; and
covering the buffer layer with a second sealing layer, wherein
the first sealing layer, the buffer layer, and the second sealing layer are each made of a silicon nitride film,
forming of the silicon nitride film of the first sealing layer, the silicon nitride film of the buffer layer, and the silicon nitride film of the second sealing layer is performed through chemical vapor deposition using ammonia gas as a source material, and
an ammonia gas flow amount set in forming the silicon nitride film of the buffer layer is greater than four times and smaller than twenty times an ammonia gas flow amount set in forming each of the silicon nitride film of the first sealing layer and the silicon nitride film of the second sealing layer.
5. The method of claim 4 , wherein
in the chemical vapor deposition, silane gas is additionally used as the source material, and
a silane gas flow amount set in forming the silicon nitride film of the buffer layer is greater than twice and smaller than six times a silane gas flow amount set in forming each of the silicon nitride film of the first sealing layer and the silicon nitride film of the second sealing layer.
6. The method of claim 4 , wherein
a pressure set in forming the silicon nitride film of the buffer layer for causing ammonia gas, silane gas, and nitrogen gas to react is greater than twice and smaller than five times a pressure set in forming each of the silicon nitride film of the first sealing layer and the silicon nitride film of the second sealing layer for causing ammonia gas, silane gas, and nitrogen gas to react.