IP Library Granted Patent US 9,979,294
Granted Patent B1
US 9,979,294 · App. 15/474,414 · Granted May 22, 2018

DC-DC converter with gate charge re-use

Inventors: Paul Jay Harriman (Belfair, WA); Andrea Bonelli (Nice, FR); Dominique Romeo (Montauban, FR)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H02M3/158H02M1/08H02M2001/0048
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Quick Facts
Patent No.
US 9,979,294
App. No.
15/474,414
Granted
May 22, 2018
Kind
B1
Abstract

A DC-DC converter includes an output power stage and a driver circuit. The output stage switches an input voltage to a switch node using a first transistor in response to a top-gate signal received at a top-gate node, and the switch node to ground using a second transistor in response to a bottom-gate signal received at a bottom-gate node. The driver circuit that provides the top- and bottom-gate signals in response to high- and low-side switch signals, respectively, activates the top-gate signal by actively regulating the top-gate node to a first voltage between a threshold voltage and a breakdown voltage of the first transistor using charge from the bottom-gate node, and activates the bottom-gate signal by actively regulating a second voltage provided to the bottom-gate node between a threshold voltage and a breakdown voltage of the second transistor using charge from the top-gate node.

Claims (79)

1. A DC-DC converter comprising:

a dead-time control circuit having an input for receiving a pulse width modulation signal, a first output for providing a high-side switch signal, and a second output for providing a low side switch signal;

an output power stage for receiving an input voltage and switching said input voltage to a switch node using a first transistor in response to a top-gate signal received at a top-gate node, and for switching said switch node to ground using a second transistor in response to a bottom-gate signal received at a bottom-gate node; and

a driver circuit for providing said top-gate signal and said bottom-gate signal in response to said high-side switch signal and said low side switch signal, respectively, said driver circuit activating said top-gate signal using a first regulator that actively regulates said top-gate node to a first voltage between a threshold voltage and a breakdown voltage of said first transistor using charge from said bottom-gate node, and activating said bottom-gate signal using a second regulator that actively regulates a second voltage provided to said bottom-gate node between a threshold voltage and a breakdown voltage of said second transistor using charge from said top-gate node.

2. The DC-DC converter of claim 1 wherein:

said first transistor has a first current electrode for receiving said input voltage, a control electrode for receiving said top-gate signal, and a second current electrode coupled to said switch node; and

said second transistor has a first current electrode coupled to said switch node, a control electrode for receiving said bottom-gate signal, and a second current electrode coupled to ground.

3. The DC-DC converter of claim 2 wherein said first and second transistors comprise laterally diffused metal-oxide-semiconductor (LDMOS) transistors.

4. The DC-DC converter of claim 1 wherein said driver circuit comprises:

a high-side driver coupled between a voltage input terminal and an intermediate node for providing said top-gate signal in response to said high-side switch signal;

a tank capacitor having a first terminal coupled to said intermediate node, and a second terminal coupled to ground; and

a low side driver coupled between said intermediate node and ground for providing said bottom-gate signal in response to said low side switch signal.

5. The DC-DC converter of claim 4 wherein said high-side driver comprises:

a first driver having an input for receiving said high-side switch signal, an output, a positive power supply terminal for receiving said input voltage, and a negative power supply terminal;

a third transistor having a first current electrode coupled to said negative power supply terminal of said first driver, a control electrode, and a second current electrode coupled to said intermediate node; and

a first voltage source having a positive terminal for receiving said input voltage, and a negative terminal coupled to said control electrode of said third transistor.

6. The DC-DC converter of claim 5 , wherein said first voltage source provides a voltage between said first and second terminals thereof equal to a predetermined voltage plus a threshold voltage of said third transistor.

7. The DC-DC converter of claim 5 wherein said low side driver comprises:

a fourth transistor having a first current electrode coupled to said intermediate node, a control electrode, and a second current electrode;

a second driver having an input for receiving said low side switch signal, an output, a positive power supply terminal coupled to said second current electrode of said fourth transistor, and a negative power supply terminal coupled to ground; and

a second voltage source having a positive terminal coupled to said control electrode of said fourth transistor, and a negative terminal coupled to ground.

8. The DC-DC converter of claim 7 , wherein said second voltage source provides a voltage between said first and second terminals thereof equal to a predetermined voltage plus a threshold voltage of said fourth transistor.

9. The DC-DC converter of claim 1 wherein said driver circuit comprises:

a high-side driver coupled between a voltage input terminal and a first intermediate node for providing said top-gate signal in response to said high-side switch signal; and

a low side driver coupled between a second intermediate node and ground for providing said bottom-gate signal in response to said low side switch signal.

10. The DC-DC converter of claim 9 wherein said high-side driver comprises:

a first amplifier having a non-inverting input, an inverting input, an output coupled to said inverting input and to said first intermediate node, and a negative power supply input coupled to said second intermediate node;

a first voltage source having a positive terminal for receiving said input voltage, and a negative terminal coupled to said non-inverting input of said first amplifier;

a first capacitor having a first terminal for receiving said input voltage, and a second terminal coupled to said output of said first amplifier; and

a first driver coupled between a voltage input terminal and said first intermediate node for providing said top-gate signal in response to said high-side switch signal.

11. The DC-DC converter of claim 10 wherein said low side driver comprises:

a second amplifier having a non-inverting input, an inverting input, an output coupled to said inverting input and to said second intermediate node, and a positive power supply input coupled to said first intermediate node;

a second voltage source having a positive terminal for receiving said input voltage, and a negative terminal coupled to said non-inverting input of said second amplifier;

a second capacitor having a first terminal coupled to said output of said second amplifier, and a second terminal coupled to ground; and

a second driver coupled between said second intermediate node and ground for providing said bottom-gate signal in response to said low side switch signal.

12. The DC-DC converter of claim 1 wherein said driver circuit comprises:

a high-side driver coupled between a voltage input terminal and an intermediate node for providing said top-gate signal in response to said high-side switch signal;

a low side driver coupled between said intermediate node and ground for providing said bottom-gate signal in response to said low side switch signal; and

a bias capacitor having a first terminal coupled to said intermediate node, and a second terminal coupled to ground.

13. The DC-DC converter of claim 12 wherein said high-side driver comprises:

a first amplifier having a non-inverting input, an inverting input, an output coupled to said inverting input, and a negative power supply input coupled to said intermediate node;

a first voltage source having a positive terminal for receiving said input voltage, and a negative terminal coupled to said non-inverting input of said first amplifier;

a first capacitor having a first terminal for receiving said input voltage, and a second terminal coupled to said output of said first amplifier; and

a first driver coupled between a voltage input terminal and said output of said first amplifier for providing said top-gate signal in response to said high-side switch signal.

14. The DC-DC converter of claim 13 wherein said low side driver comprises:

a second amplifier having a non-inverting input, an inverting input, an output coupled to said inverting input, and a positive power supply input coupled to said intermediate node;

a second voltage source having a positive terminal for receiving said input voltage, and a negative terminal coupled to said non-inverting input of said second amplifier;

a second capacitor having a first terminal coupled to said output of said second amplifier, and a second terminal coupled to ground; and

a second driver coupled between said output of said second amplifier and ground for providing said bottom-gate signal in response to said low side switch signal.

15. A DC-DC power conversion system comprising:

an error amplifier having a first input for receiving a feedback signal, a second input for receiving a reference voltage, and an output;

an oscillator having an output for providing a clock signal; and

a pulse width modulator having a control input coupled to said output of said error amplifier, a clock input for receiving said clock signal, and an output for providing a pulse width modulator signal;

a dead-time control circuit having an input for receiving a pulse width modulation signal, a first output for providing a high-side switch signal, and a second output for providing a low side switch signal;

an output power stage for receiving an input voltage and switching said input voltage to a switch node using a first transistor in response to a top-gate signal received at a top-gate node, and for switching said switch node to ground using a second transistor in response to a bottom-gate signal received at a bottom-gate node; and

a driver circuit for providing said top-gate signal and said bottom-gate signal in response to said high-side switch signal and said low side switch signal, respectively, said driver circuit activating said top-gate signal using a first regulator that actively regulates said top-gate node to a first voltage between a threshold voltage and a breakdown voltage of said first transistor using charge from said bottom-gate node, and activating said bottom-gate signal using a second regulator that actively regulates a second voltage provided to said bottom-gate node between a threshold voltage and a breakdown voltage of said second transistor using charge from said top-gate node.

16. The DC-DC power conversion system of claim 15 , wherein said error amplifier, said oscillator, said pulse width modulator, said dead-time control circuit, said driver circuit, and said output power stage are combined in a single monolithic integrated circuit.

17. The DC-DC power conversion system of claim 15 , further comprising:

an inductor having a first terminal coupled to said switch node, and a second terminal for providing an output voltage; and

a capacitor having a first terminal coupled to said second terminal of said inductor, and a second terminal coupled to ground.

18. The DC-DC power conversion system of claim 15 wherein:

said first transistor has a first current electrode for receiving said input voltage, a control electrode for receiving said top-gate signal, and a second current electrode coupled to said switch node; and

said second transistor has a first current electrode coupled to said switch node, a control electrode for receiving said bottom-gate signal, and a second current electrode coupled to ground.

19. The DC-DC power conversion system of claim 18 wherein said first and second transistors comprise laterally diffused metal-oxide-semiconductor (LDMOS) transistors.

20. A method comprising:

receiving a pulse width modulation signal;

providing a high-side switch signal and a low side switch signal with a dead time therebetween in response to said pulse width modulation signal;

driving a top-gate node coupled to a gate of a first transistor in response to said high-side switch signal using a first regulator that actively regulates said top-gate node to a first voltage between a threshold voltage and a breakdown voltage of said first transistor using charge from a bottom-gate node coupled to a gate of a second transistor; and

driving said bottom-gate node in response to said low side switch signal using a second regulator that actively regulates said bottom-gate node to a second voltage between a threshold voltage and a breakdown voltage of said second transistor using charge from said top-gate node.

21. The method of claim 20 further comprising:

switching an input voltage to a switch node using said first transistor in response to said driving said top-gate node; and

switching said switch node to ground using said second transistor in response to said driving said bottom-gate node.

22. The method of claim 20 further comprising:

forming a tank voltage using a tank capacitor;

clamping a top-gate voltage on said top-gate node to said first voltage using said tank voltage; and

clamping a bottom-gate voltage on said bottom-gate node to said second voltage using said tank voltage.

23. The method of claim 20 wherein:

driving said top-gate node comprises driving a gate of a first LDMOS transistor; and

driving said bottom-gate node comprises driving a gate of a second LDMOS transistor.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 04481, FRAME 0541 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064072/0459 →
PATENT SECURITY AGREEMENT Recorded Nov 17, 2017
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 044481/0541 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2017
From: HARRIMAN, PAUL J.; BONELLI, ANDREA; ROMEO, DOMINIQUE
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 041799/0900 →