Display device

1. A display device comprising:

a first scanning line extending in a first direction;

a signal line;

a second pixel electrode distant from the first scanning line in a second direction different from the first direction;

a first pixel electrode located between the first scanning line and the second pixel electrode;

a second thin-film transistor comprising:

a second semiconductor layer provided on a first insulating film and comprising a fourth region, a fifth region and a sixth region located between the fourth region and the fifth region;

a second gate electrode connected to the first scanning line and facing the sixth region;

a third electrode connecting the fourth region and the signal line; and

a fourth electrode connected to the fifth region;

a first line provided on the first insulating film, formed of a same material as the second semiconductor layer, connected to the second pixel electrode, and extending through a region facing the first pixel electrode to the first scanning line side; and

a second line located above the second semiconductor layer and the first line and connecting the first line and the fourth electrode.

2. The device of claim 1 , further comprising

a second scanning line extending in the first direction and adjacent to the first scanning line in the second direction so as to be distant from the first scanning line;

a first color subpixel comprising the first pixel electrode;

a second color subpixel comprising the second pixel electrode;

another first color subpixel comprising another first pixel electrode located between the first scanning line and the second scanning line, the another first pixel electrode being adjacent to the first pixel electrode across the intervening first scanning line; and

a first thin-film transistor comprising:

a first semiconductor layer provided on the first insulating film, formed of the same material as the second semiconductor layer, and comprising a first region, a second region and a third region located between the first region and the second region;

a first gate electrode connected to the second scanning line and facing the third region;

a first electrode connecting the first region and the signal line; and

a second electrode connecting the second region and the another first pixel electrode, wherein

the first pixel electrode and the another first pixel electrode are integrally formed, and are electrically connected to each other, and

the first color subpixel shares the first thin-film transistor with the other first color subpixel.

3. The device of claim 1 , further comprising

a second insulating film located above the second semiconductor layer and the first line, wherein

the signal line and the second line are provided on the second insulating film and are formed of a same material.

4. The device of claim 1 , further comprising

a common electrode located above the first pixel electrode and the second pixel electrode, wherein

the common electrode comprises a first linear electrode facing the first pixel electrode.

5. The device of claim 1 , wherein

a conductivity of the first line is higher than a conductivity of each of the fourth and fifth regions of the second semiconductor layer.

6. The device of claim 1 , further comprising

a first linear electrode located between the first scanning line and the second pixel electrode and extending in a direction from the first scanning line to the second pixel electrode, wherein

the first line faces the first linear electrode and extends along the first linear electrode.

7. The device of claim 6 , further comprising

a common electrode located below the first pixel electrode and the second pixel electrode, wherein

the first pixel electrode comprises the first linear electrode.

8. The device of claim 1 , wherein

both the fifth region of the second semiconductor layer and the second line are closer to the second pixel electrode than the first scanning line, and

the second line extends along the first scanning line.

9. The device of claim 8 , further comprising

a light-shielding layer comprising:

a first extension portion facing the signal line and extending along the signal line; and

a second extension portion facing both the first scanning line and the second line and extending along the first scanning line.

10. The device of claim 1 , wherein

the material of the second semiconductor layer and the first line is polycrystalline silicon.

11. The device of claim 10 , wherein

an impurity concentration of the first line is higher than an impurity concentration of each of the fourth and fifth regions of the second semiconductor layer.