Method of producing composite photocatalyst and composite photocatalyst

1. A composite photocatalyst which comprises a plurality of types of optical semiconductors on which a co-catalyst is loaded, wherein the co-catalyst is present on the surfaces of the plurality of types of the optical semiconductors, and is present in a state of being interposed between bonding surfaces of the plurality of types of the optical semiconductors, or is present in a state of covering the optical semiconductor.

2. The composite photocatalyst according to claim 1 ,

wherein at least one of the plurality of types of optical semiconductors is an oxide, a nitride, an oxynitride, a chalcogenide, or an oxychalcogenide each of which contains one or more elements selected from the group consisting of Ti, V, Ga, Zn, Bi, Nb, and Ta.

3. The composite photocatalyst according to claim 2 ,

wherein at least one of the plurality of types of optical semiconductors is BaTaO 2 N, BaNbO 2 N, TaON, Ta 3 N 5 , LaTiO 2 N, BiVO 4 , GaN:ZnO, or a partial substitution thereof.

4. The composite photocatalyst according to claim 1 , wherein the co-catalyst contains Co.

5. A method of producing a composite photocatalyst as claimed in claim 1 from a plurality of types of optical semiconductors, the method comprising:

heating a solid-liquid mixture containing a solvent, a co-catalyst or a co-catalyst source and the plurality of types of optical semiconductors by irradiating the solid-liquid mixture with microwave.

6. The method of producing a composite photocatalyst according to claim 5 , wherein before the microwave irradiation, the co-catalyst source in the solid-liquid mixture is present in a state of being dissolved in a solvent.

7. The method of producing a composite photocatalyst according to claim 5 , wherein before the microwave irradiation, the co-catalyst or a co-catalyst source and the plurality of types of optical semiconductors in the solid-liquid mixture are present as a solid in the solvent, and the cocatalyst or a co-catalyst source is in a state of being loaded on the plurality of types of optical semiconductors.

8. The method of producing a composite photocatalyst according to claim 7 , further comprising as a pre-step of the heating:

first loading a co-catalyst on a first optical semiconductor by heating with the microwave in a state where the first optical semiconductor is brought into contact with a solution in which a co-catalyst source is dissolved;

second loading a co-catalyst on a second optical semiconductor by heating with the microwave in a state where the second optical semiconductor is brought into contact with the solution in which the co-catalyst source is dissolved; and

mixing the first optical semiconductor on which the co-catalyst is loaded and the second optical semiconductor on which the co-catalyst is loaded, into the solvent so as to obtain the solid-liquid mixture.

9. The method of producing a composite photocatalyst according to claim 8 , wherein the microwave irradiation is performed in a closed system in the first loading step and the second loading step.

10. The method of producing a composite photocatalyst according to claim 8 , further comprising as pre-steps of the first loading and the second loading:

bringing a solution of one or more types of organic acids containing a polyorganic acid into contact with a surface of an oxide, an oxynitride, or a nitride containing one or more elements selected from Ti, V, Ga, Ge, Nb, La, and Ta; and

collecting the oxide, the oxynitride, or the nitride which remains as a solid content after the organic acid contact,

wherein the collected solid contents are used as the first optical semiconductor and the second optical semiconductor.

11. The method of producing a composite photocatalyst according to claim 5 , wherein at least one of the plurality of types of optical semiconductors is an oxide, a nitride, an oxynitride, a chalcogenide, or an oxychalcogenide, each of which contains one or more elements selected from the group consisting of Ti, V, Ga, Zn, Bi, Nb, and Ta.

12. The method of producing a composite photocatalyst according to claim 11 , wherein at least one of the plurality of types of optical semiconductors is BaTaO 2 N, BaNbO 2 N, TaON, Ta 3 N 5 , LaTiO 2 N, BiVO 4 , GaN:ZnO, or a partial substitution thereof.

13. The method of producing a composite photocatalyst according to claim 5 , wherein the co-catalyst or the co-catalyst source contains Co or Co-ion.

14. The method of producing a composite photocatalyst according to claim 5 , wherein the solvent is water, alcohols, or a mixed solvent thereof.

15. The method of producing a composite photocatalyst according to claim 5 , wherein the solid-liquid mixture is heated by being irradiated with the microwave in a closed system in the heating.

16. The method of producing a composite photocatalyst according to claim 15 , wherein pressure in the closed system is higher than pressure outside the system.

17. The method of producing a composite photocatalyst according to claim 5 , further comprising as a pre-step of the heating:

bringing a solution of one or more types of organic acids containing a polyorganic acid into contact with a surface of an oxide, an oxynitride, or a nitride each of which contains one or more elements selected from Ti, V, Ga, Ge, Nb, La, and Ta; and

collecting the oxide, the oxynitride, or the nitride which remains as a solid content after the organic acid contact step,

wherein the collected solid contents are used as the plurality of types of optical semiconductors.

18. The method of producing a composite photocatalyst according to claim 17 , wherein the organic acid is a polysulfonic acid.

19. The method of producing a composite photocatalyst according to claim 17 , wherein the organic acid has an aryl group.

20. The method of producing a composite photocatalyst according to claim 17 , wherein the organic acid has a weight average molecular weight in a range of 1,000 to 1,000,000.