IP Library Granted Patent US 9,961,742
Granted Patent B2
US 9,961,742 · App. 15/478,986 · Granted May 1, 2018

Multi-channel LED driver with overheating protection capabilities

Inventors: Hyun Mo Ahn (Cheongju-si, KR); Zhi Yuan Cui (Cheongju-si, KR); Seung Hwan Lee (Seoul, KR); In Ho Hwang (Incheon-si, KR); James Jung (Seoul, KR); Gyu Ho Lim (Cheongju-si, KR)
Assignee: Magnachip Semiconductor, Ltd.
H05B33/089H05B33/0812H05B33/0827
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Quick Facts
Patent No.
US 9,961,742
App. No.
15/478,986
Granted
May 1, 2018
Kind
B2
Abstract

An apparatus to drive a multi-channel light emitting diode (LED) array includes switching transistors connected to LED strings of the multi-channel LED array, error amplifiers connected to the switching transistors, each of the error amplifiers being configured to control current flowing through the LED string to have a target magnitude, and overheating protection circuits connected to the switching transistors, each of the overheating protection circuits being configured to regulate current flowing through a respective switching transistor to have a magnitude less than or equal to the target magnitude.

Claims (40)

1. An apparatus to drive a multi-channel light emitting diode (LED) array, comprising:

a circuit connected to an LED string and comprising

a switching transistor comprising a first terminal and a second terminal,

an error amplifier connected to the switching transistor and configured to control current flowing through the LED string to have a target magnitude, and

an overheating protection circuit connected to the switching transistor and configured to regulate current flowing through the switching transistor to have a magnitude less than or equal to the target magnitude by providing a current dividing path between the first and second terminals, wherein the overheating protection circuit comprises a comparator configured to compare a voltage at the second terminal to a trigger level voltage to control current flow through the current dividing path.

2. The apparatus of claim 1 , wherein LEDs included in the LED string have different forward bias voltages.

3. The apparatus of claim 1 , wherein the switching transistor is a lateral diffused metal-oxide-semiconductor field effect transistor (LDMOSFET), a junction gate field effect transistor (JFET), a metal-oxide-semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), or a bipolar junction transistor (BJT).

4. The apparatus of claim 3 , wherein the error amplifier comprises a differential amplifier or an operational amplifier.

5. The apparatus of claim 1 , wherein the switching transistor is grounded via a resistor.

6. The apparatus of claim 5 , wherein the current dividing path comprises a resistive element and a switch.

7. The apparatus of claim 6 , wherein the resistive element comprises a resistor, resistors connected in parallel, a metal-oxide-semiconductor field-effect transistor (MOSFET), or a bipolar junction transistor (BJT).

8. The apparatus of claim 6 , wherein the switch comprises a metal-oxide-semiconductor field-effect transistor (MOSFET) or a bipolar junction transistor (BJT).

9. The apparatus of claim 8 , wherein the switch is configured to be switched on in response to an electrical quantity indicative of a current flowing through the respective resistor being greater than or equal to the trigger level voltage.

10. The apparatus of claim 9 , wherein the electrical quantity indicative of the current flowing through the respective resistor comprises the voltage at the second terminal of the respective switching transistor, and an output from the comparator is provided into a terminal of the respective switch in accordance with a pulse width modulation (PWM) signal from a PWM signal generator.

11. The apparatus of claim 8 , wherein each switch is configured to be switched in response to an electrical quantity indicative of a current flowing through the respective resistor and a pulse width modulation (PWM) signal from a PWM signal generator.

12. An apparatus to protect a light emitting diode (LED) driver from overheating, comprising:

switching transistors connected to LED strings; and

shunt current branches respectively connected in parallel to the switching transistors,

wherein each of the shunt current branches comprises a resistive element and a switch connected in series, and the switch is configured to be switched on in response to a condition being met, and

wherein a resistance of the resistive element is based at least in part on a drain-source voltage of a respective switching transistor prone to causing overheating of the respective switching transistor, and a current intended to flow into a respective shunt current branch.

13. The apparatus of claim 12 , wherein each of the switching transistors is grounded via a resistor and the condition comprises a condition that an electrical quantity indicative of a current flowing through the respective resistor is greater than or equal to a voltage.

14. The apparatus of claim 13 , wherein the electrical quantity indicative of the current flowing through the respective resistor comprises a voltage drop across the respective resistor.

15. The apparatus of claim 12 , wherein the resistive element comprises one of a resistor, resistors connected in parallel, a metal-oxide-semiconductor field-effect transistor (MOSFET), and a bipolar junction transistor (BJT).

16. The apparatus of claim 12 , wherein the switch comprises one of a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT).

17. An apparatus for driving light emitting diode (LED) strings, comprising:

constant current control circuits connected to the LED strings, each of the constant current control circuits being configured to control current flowing through a respective LED string and comprising a switching transistor comprising a first terminal, connected to the respective LED string, and a second terminal; and

overheating protection circuits connected to the constant current control circuits, each of the overheating protection circuits being configured to provide a current dividing path for the current flowing through the respective LED string in response to detection of the current being greater than or equal to a particular current, wherein the current is divided between the respective switching transistor and the current dividing path, and

wherein the current dividing path is formed between the first and second terminals of the respective switching transistor.

18. The apparatus of claim 17 , wherein the particular current for each overheating protection circuit is based at least in part on either one or both of an amount of power consumption by the switching transistor prone to causing a temperature of the switching transistor to increase beyond a maximum allowable temperature and a maximum voltage drop between the first and second terminals of the respective switching transistor based on a deviation in forward bias voltage between the LED strings.

19. The apparatus of claim 17 , wherein each of the switching transistors is grounded via a sensing resistor, each of the switching transistors comprises a first terminal connected to the respective LED string and a second terminal connected to the respective sensing resistor, and a resistive element and a switch are provided in the current dividing path.

20. An apparatus to drive light emitting diode (LED) strings, comprising:

constant current control circuits connected to the LED strings, each of the constant current control circuits being configured to control current flowing through a respective LED string and comprising a switching transistor connected to the respective LED string, and each of the switching transistors comprising a first terminal connected to the respective LED string and a second terminal; and

overheating protection circuits connected to the constant current control circuits, each of the overheating protection circuits being configured to provide a current dividing path for the current flowing through the respective LED string in response to detecting that a voltage drop between the first and second terminals of a respective switching transistor is greater than or equal to a trigger level voltage, wherein the current is divided between the respective switching transistor and the current dividing path by the provision of the current dividing path.

21. An apparatus to drive light emitting diode (LED) strings, comprising:

constant current control circuits respectively connected to the LED strings, each of the constant current control circuits being configured to control current flowing through a respective LED string and comprising a switching transistor connected to the respective LED string, and each of the switching transistors comprising a first terminal connected to the respective LED string and a second terminal grounded via a resistor; and

overheating protection circuits connected to the constant current control circuits, each of the overheating protection circuits being configured to provide a current dividing path for the current flowing through the respective LED string in response to detecting that a voltage at the first terminal of a respective switching transistor is greater than or equal to a trigger level voltage, wherein the current is divided between the respective switching transistor and the current dividing path, wherein

the current dividing path is formed between the first and second terminals of the respective switching transistor.

22. The apparatus of claim 21 , wherein the current dividing path comprises a switch that is controlled to be switched on in response to a voltage drop across the respective sensing resistor being greater than or equal to the trigger level voltage.

23. The apparatus of claim 21 , wherein the current dividing path comprises a resistive element that comprises one of a resistor, resistors connected in parallel, a metal-oxide-semiconductor field-effect transistor (MOSFET), and a bipolar junction transistor (BJT).

24. The apparatus of claim 21 , wherein the current dividing path comprises a switch that comprises one of a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT).

Assignments (3)
NUNC PRO TUNC ASSIGNMENT Recorded Feb 18, 2025
From: MAGNACHIP MIXED-SIGNAL, LTD.
To: MAGNACHIP SEMICONDUCTOR, LTD.
Reel/Frame 070241/0214 →
NUNC PRO TUNC ASSIGNMENT Recorded Mar 14, 2024
From: MAGNACHIP SEMICONDUCTOR, LTD.
To: MAGNACHIP MIXED-SIGNAL, LTD.
Reel/Frame 066878/0875 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 4, 2017
From: AHN, HYUN MO; CUI, ZHI YUAN; LEE, SEUNG HWAN; HWANG, IN HO; JUNG, JAMES; LIM, GYU HO
To: MAGNACHIP SEMICONDUCTOR, LTD.
Reel/Frame 041850/0065 →
Priority Claims (1)
KR 10-2016-0060262 · May 17, 2016 · national
Continuity (1)
Related Publication 20170339756A1 · Nov 23, 2017