Method of manufacturing display device having a multilayered undercoating layer of silicon oxide and silicon nitride
According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film.
1. A method of manufacturing a display device comprising:
forming a resin layer on a glass substrate;
forming a first silicon oxide film having a thickness of 10 to 50 nm above the resin layer such that a peripheral portion of the first silicon oxide film contacts with the glass substrate;
forming a silicon nitride film above the first silicon oxide film;
forming a second silicon oxide film above the silicon nitride film;
forming an active layer of a thin-film transistor above the second silicon oxide film; and
peeling the resin layer from the glass substrate,
wherein
the resin layer, above which the active layer is formed, has a downward minimum bend radius R of 2 mm or less, wherein the downward minimum bend radius R is obtained by bending an evaluation object downward by 180° by putting the evaluation object in close contact with half a periphery of a rod.
2. The method of claim 1 , wherein the first silicon oxide film is in contact with the resin layer.
3. The method of claim 2 , wherein the second silicon oxide film is in contact with the active layer of the thin-film transistor.
4. The method of claim 3 , wherein the active layer of the thin-film transistor is formed of polysilicon.
5. The method of claim 3 , wherein the resin layer has a thickness of 5-30 μm.
6. The method of claim 3 , wherein the second silicon oxide film has a thickness of 100-500 nm.
7. The method of claim 2 , wherein the active layer of the thin-film transistor is formed of polysilicon.
8. The method of claim 2 , wherein the resin layer has a thickness of 5-30 μm.
9. The method of claim 2 , wherein the second silicon oxide film has a thickness of 100-500 nm.
10. The method of claim 1 , wherein the second silicon oxide film is in contact with the active layer of the thin-film transistor.
11. The method of claim 1 , wherein the active layer of the thin-film transistor is formed of polysilicon.
12. The method of claim 1 , wherein the resin layer has a thickness of 5-30 μm.
13. The method of claim 1 , wherein the second silicon oxide film has a thickness of 100-500 nm.