Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole
A method of manufacturing a glass substrate that has a through hole, includes (1) forming an initial hole in a glass substrate by irradiating laser light from a first surface side of the glass substrate; (2) performing a first etching process using a first etching solution to form, from the initial hole, a first through hole that extends from a first opening formed at a first surface to a second opening formed at a second surface, and to make a ratio “d 1 /R t1 ” of a thickness “d 1 ” of the glass substrate with respect to a diameter “R t1 ” of the first opening to be within a range between 10 to 20; and (3) performing a second etching process to enlarge the first through hole using a second etching solution, whose etching rate with respect to the glass substrate is faster than that of the first etching solution.
1. A method of manufacturing a glass substrate that has a through hole, the method comprising:
(1) forming an initial hole in a glass substrate, having first and second surfaces opposing each other, by irradiating laser light from a first surface side of the glass substrate;
(2) performing a first etching on the glass substrate using a first etching solution to form, from the initial hole, a first through hole that extends from a first opening formed at the first surface to a second opening formed at the second surface, and to make a ratio d 1 /R t1 of a thickness d 1 of the glass substrate with respect to a diameter R t1 of the first opening to be within a range of from 10 to 15.6, wherein d 1 is a thickness of the substrate after the performing of the first etching; and
(3) after the performing of the first etching (2), performing a second etching on the glass substrate to enlarge the first through hole using a second etching solution, whose etching rate with respect to the glass substrate is faster than an etching rate of the first etching solution with respect to the glass substrate,
wherein a ratio V 2 /V 1 of an etching rate V 2 of the second etching solution with respect to an etching rate V 1 of the first etching solution is at least 3.
2. The method according to claim 1 , wherein an etching rate V 1 of the first etching solution is less than or equal to 0.5 μm/minute.
3. The method according to claim 1 , wherein an etching rate V 2 of the second etching solution is from 1 μm/minute to 5 μm/minute.
4. The method according to claim 1 , wherein the thickness d 1 is less than a thickness of the glass substrate before the performing of the first etching (2).
5. The method according to claim 1 , wherein a thickness d 0 of the glass substrate before the performing the (2) is at least 0.3 mm.
6. The method according to claim 1 , wherein a thickness d 0 of the glass substrate before the performing of the first etching (2) is less than or equal to 0.5 mm.
7. The method according to claim 1 , wherein a ratio d 0 /R t0 of a thickness d 0 of the glass substrate before the performing of the first etching (2) with respect to a diameter R t0 of an opening of the initial hole at the first surface is at least 25.
8. The method according to claim 1 , wherein the initial hole formed in (1) is a through hole or a line of voids.
9. The method according to claim 1 , wherein the ratio d 1 /R t1 is from 10 to 15.
10. The method according to claim 1 , wherein the ratio d 1 /R t1 is from 13.4 to 15.6.
11. The method claim 1 ,
wherein the etching rate V 1 is an etching rate of the first etching of the glass substrate when a thickness of the substrate changes from d 0 to d 1 , wherein the thickness d 0 is a thickness of the glass substrate before the performing of the first etching, and
wherein the etching rate V 2 is an etching rate of the second etching of the glass substrate when a thickness of the substrate changes from d 1 to d 2 , wherein the thickness d 2 is a thickness of the glass substrate after the performing of the second etching.
12. A method forming a through hole in a glass substrate, the method comprising:
(1) forming an initial hole in a glass substrate, having first and second surfaces opposing each other, by irradiating laser light from a first surface side of the glass substrate;
(2) performing a first etching on the glass substrate using a first etching solution to form, from the initial hole, a first through hole that extends from a first opening formed at the first surface to a second opening formed at the second surface, and to make a ratio d 1 /R t1 of a thickness d 1 of the glass substrate with respect to a diameter R t1 of the first opening to be within a range of from 10 to 15.6, wherein d 1 is a thickness of the substrate after the performing of the first etching; and
(3) after the performing of the first etching (2), performing a second etching on the glass substrate to enlarge the first through hole using a second etching solution, whose etching rate with respect to the glass substrate is faster than an etching rate of the first etching solution with respect to the glass substrate,
wherein a ratio V 2 /V 1 of an etching rate V 2 of the second etching solution with respect to an etching rate V 1 of the first etching solution is 10 or more.
13. The method according to claim 12 , wherein an etching rate V 2 of the second etching solution is from 1 μm/minute to 5 μm/minute.
14. The method according to claim 12 , wherein the ratio d 1 /R t1 is from 10 to 15.
15. The method according to claim 12 , wherein the ratio d 1 /R t1 is from 13.4 to 15.6.
16. The method claim 12 ,
wherein the etching rate V 1 is an etching rate of the first etching of the glass substrate when a thickness of the substrate changes from d 0 to d 1 , wherein the thickness d 0 is a thickness of the glass substrate before the performing of the first etching, and
wherein the etching rate V 2 is an etching rate of the second etching of the glass substrate when a thickness of the substrate changes from d 1 to d 2 , wherein the thickness d 2 is a thickness of the glass substrate after the performing of the second etching.