Electric power conversion apparatus
An electric power conversion apparatus includes a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that has an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module includes first and second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further includes a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.
1. A power semiconductor module, comprising:
a plurality of power semiconductor elements that includes a first IGBT, a second IGBT, a first diode, and a second diode;
a plurality of conducting plates on which a part of the plurality of power semiconductor elements is joined, the plurality of conducting plates including a first conducting plate and a second conducting plate; and
a plurality of terminals including a first DC terminal and a second DC terminal, which are connected with the first and second conducting plates, respectively, wherein
each of the first conducting plate and the second conducting plate includes a main surface that is wider than other surfaces of the first and second conducting plates and a side surface that is narrower than the main surface, and
when viewed from a direction perpendicular to the main surface of the first conducting plate and the second conducting plate, the first IGBT, the second IGBT, the first diode, and the second diode are arranged such that
a first centerline passes through a center of the first IGBT and a center of the first diode,
a second centerline passes through a center of the second IGBT and a center of the second diode,
the first DC terminal is arranged between the first centerline and the second centerline, and
the second DC terminal is arranged so as to overlap with the second centerline and not to overlap with the first DC terminal.
2. The power semiconductor module according to claim 1 , wherein
the plurality of conducting plates further includes a third conducting plate which opposes the first conducting plate with the first IGBT and the first diode interposed therebetween,
the terminal further includes an AC terminal that is continuous with the third conducting plate, and
when viewed from a direction perpendicular to the main surface of the first conducting plate and the second conducting plate, the first DC terminal is arranged in a space between the second DC terminal and the AC terminal.
3. The power semiconductor module according to claim 2 , wherein
the AC terminal is arranged so as to overlap with the first centerline.
4. The power semiconductor module according to claim 1 , further comprising:
a first heat dissipation member and a second heat dissipation member that are made of electrically conductive material, wherein
the plurality of power semiconductor elements and the first and second conducting plates are interposed between the first heat dissipation member and the second heat dissipation member, and
the first DC terminal and the second DC terminal are arranged outside of a space between the first heat dissipation member and the second heat dissipation member.
5. The power semiconductor module according to claim 4 , wherein
a first electric insulation member is provided between the first conducting plate and the first heat dissipation member,
a second electric insulation member is provided between the second conducting plate and the second heat dissipation member, and
the plurality of power semiconductor elements are sealed with a mold resin.
6. The power semiconductor module according to claim 1 , wherein
the second DC terminal and the second conducting plate are integrally formed without a seam.
7. The power semiconductor module according to claim 1 , wherein
the first conducting plate has a first soldered portion to which the first IGBT is joined, and
a thickness of the first soldered portion is larger than a thickness of the first DC terminal.