System and method for cost and power optimized heterogeneous dual-channel DDR DIMMs
A dual-channel Dual In-Line Memory Module (DIMM) includes a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the dual-channel DIMM, and a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the dual-channel DIMM, wherein the first memory channel is different than the second memory channel, and wherein the first memory element is a different type of memory element than the second memory element.
1. A fifth generation Double Data Rate (DDR5) Dual In-Line Memory Module (DIMM), comprising:
a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the DDR5 DIMM, wherein the first memory channel includes a first command/address bus and a first data bus; and
a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the DDR5 DIMM, wherein the second memory channel includes a second command/address bus and a second data bus, wherein the first memory channel is different than the second memory channel, wherein the first memory locations are different than the second memory locations, and wherein the first memory element is a different type of memory element than the second memory element.
2. The DDR5 DIMM of claim 1 , wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element.
3. The DDR5 DIMM of claim 2 , wherein the first memory element further comprises a JEDEC Standard NVDIMM-N type NVDIMM.
4. The DDR5 DIMM of claim 2 , wherein the first memory element further comprises a JEDEC Standard NVDIMM-P type NVDIMM.
5. The DDR5 DIMM of claim 2 , wherein the first memory element further comprises a JEDEC Standard NVDIMM-F type NVDIMM.
6. The DDR5 DIMM of claim 2 , wherein the second memory element comprises a basic DIMM type of memory element.
7. The DDR5 DIMM of claim 6 , wherein the basic DIMM type comprises one of an unbuffered DIMM (UDIMM), a registered DIMM (RDIMM), a load reduced DIMM (LRDIMM), and a storage class memory (SCM).
8. The DDR5 DIMM of claim 1 , wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element.
9. The DDR5 DIMM of claim 1 , wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device.
10. The DDR5 DIMM of claim 1 , wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC.
11. A method of providing a fifth generation Double Data Rate (DDR5) Dual In-Line Memory Module (DIMM), the method comprising:
selecting a first type of memory type for a first memory element of the DDR5 DIMM;
configuring the DDR5 DIMM to couple the first memory element to a first memory channel of the DDR5 DIMM;
performing memory transactions for first memory locations associated with the first memory element via the first memory channel, wherein the first memory channel includes a first command/address bus and a first data bus;
selecting a second type of memory type for a second memory element of the DDR5 DIMM, wherein the second memory channel includes a second command/address bus and a second data bus, wherein the first memory element is a different type of memory element than the second memory element;
configuring the DDR5 DIMM to couple the second memory element to a second memory channel of the DDR5 DIMM, wherein the first memory channel is different than the second memory channel; and
performing memory transactions for second memory locations associated with the second memory element via the second memory channel, wherein the first memory locations are different than the second memory locations.
12. The method of claim 11 , wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element, and wherein the second memory element comprises a basic DIMM type of memory element.
13. The method of claim 11 , wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element.
14. The method of claim 11 , wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device.
15. The method of claim 11 , wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC.
16. An information handling system, comprising:
a dual channel fifth generation Double Data Rate (DDR5) memory controller; and
a DDR5 Dual In-Line Memory Module (DIMM), including:
a first memory element configured to perform memory transactions for first memory locations associated with the first memory element via a first memory channel of the DDR5 memory controller, wherein the first memory channel includes a first command/address bus and a first data bus; and
a second memory element configured to perform memory transactions for second memory locations associated with the second memory element via a second memory channel of the DDR5 memory controller, wherein the second memory channel includes a second command/address bus and a second data bus, wherein the first memory channel is different than the second memory channel, wherein the first memory locations are different than the second memory locations, and wherein the first memory element is a different type of memory element than the second memory element.
17. The information handling system of claim 16 , wherein the first memory element comprises a non-volatile DIMM (NVDIMM) type of memory element, and wherein the second memory element comprises a basic DIMM type of memory element.
18. The information handling system of claim 16 , wherein the first memory element comprises a basic DIMM type of memory element, and wherein the second memory element comprises a non-volatile random access memory (NVRAM) type of memory element.
19. The information handling system of claim 16 , wherein the first memory element comprises a basic DIMM type of memory element that utilizes a first type of Dynamic Random Access Memory (DRAM) device, and wherein the second memory element comprises the basic DIMM type of memory element that utilizes a second type of DRAM device.
20. The information handling system of claim 16 , wherein the first memory element comprises a basic DIMM type of memory element that utilizes an Error Correcting Code (ECC), and wherein the second memory element comprises the basic DIMM type of memory element that does not utilize the ECC.