Process for group III-V semiconductor nanostructure synthesis and compositions made using same
Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
1. A method of producing a Group III inorganic compound, the method comprising:
providing a first reactant, the first reactant being YZ 3 , where Y is B, Al, Ga, In, or Tl and Z is F, Cl, Br, I, or At, or the first reactant comprising a trialkyl substituted Group III atom;
providing a second reactant, the second reactant being an acid; and,
reacting the first and second reactants to produce the Group III inorganic compound.
2. The method of claim 1 , wherein the first reactant is a trialkyl indium.
3. The method of claim 1 , wherein the first reactant is trimethyl indium.
4. The method of claim 1 , wherein the second reactant is a phosphonic acid, a phosphinic acid, a carboxylic acid, a sulfonic acid, or a boronic acid.
5. The method of claim 1 , wherein the second reactant is stearic acid.
6. The method of claim 1 , wherein the Group III inorganic compound comprises one or more phosphonate, phosphinate, and/or carboxylate moieties bonded to the Group III atom.
7. The method of claim 1 , wherein the Group III inorganic compound is Y(alkylcarboxylate) 3 , Y(arylcarboxylate) 3 , Y(alkylphosphonate) 3 , Y(arylphosphonate) 3 , Y(alkylphosphonate) 2 , Y(arylphosphonate) 2 , Y(bialkylphosphinate) 3 , or Y(biarylphosphinate) 3 .
8. The method of claim 1 , wherein the Group III inorganic compound is indium phosphonate or indium carboxylate.
9. The method of claim 1 , wherein the Group III inorganic compound is indium tristearate.
10. The method of claim 1 , wherein the second reactant is provided at a molar ratio of about 2.8-3.2 with respect to the first reactant.
11. The method of claim 1 , wherein the second reactant is provided at a molar ratio of more than 3:1 with respect to the first reactant.
12. A Group III inorganic compound produced by the method of claim 1 .
13. A composition, comprising:
a first reactant, the first reactant being YZ 3 , where Y is B, Al, Ga, In, or TI and Z is F, Cl, Br, I, or At, or the first reactant comprising a trialkyl substituted Group III atom; and,
a second reactant, the second reactant being a phosphonic acid, a phosphinic acid, a carboxylic acid, a sulfonic acid, or a boronic acid.
14. The composition of claim 13 , wherein the trialkyl substituted Group III atom is trialkyl indium.
15. The composition of claim 13 , wherein the trialkyl substituted Group III atom is trimethyl indium.
16. The composition of claim 13 , wherein the second reactant is stearic acid.
17. The composition of claim 13 , wherein the composition comprises a nanostructure.
18. A method for production of nanostructures, the method comprising:
providing one or more nanostructure precursors;
reacting the one or more precursors at a reaction temperature to produce the nanostructures and at least one by-product, the by-product having a boiling point or sublimation temperature that is less than the reaction temperature; and,
removing at least a portion of the by-product as a vapor.
19. The method of claim 18 , wherein the nanostructures are semiconductor nanostructures.
20. The method of claim 19 , wherein the semiconductor nanostructures are Group II-VI semiconductor nanostructures, Group III-V semiconductor nanostructures, Group IV semiconductor nanostructures, metal nanostructures, or metal oxide nanostructures.
21. The method of claim 18 , wherein the one or more nanostructure precursors comprise a first precursor comprising a group VI atom and a second precursor comprising a group II atom.
22. The method of claim 20 , wherein the Group II-VI semiconductor nanostructures comprises ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, or BaTe.
23. The method of claim 18 , wherein the one or more nanostructure precursors comprise a group IV atom or a metal atom.
24. The method of claim 20 , wherein the nanostructures comprise Group IV semiconductor nanostructures, metal nanostructures, or metal oxide nano structures.
25. The method of claim 24 , wherein the nanostructures comprise Ge, Si, PbS, PbSe, PbTe, Au, Ag, Co, Fe, Ni, Cu, Zn, Pd, Pt, BaTiO 3 , SrTiO 3 , CaTiO 3 , KNbO 3 , PbTiO 3 , LiTiO 3 , LiTaO 3 , LiNbO 3 , an alloy or mixture thereof.
26. The method of claim 18 , wherein the one or more nanostructure precursors comprise a first precursor comprising a group V atom and a second precursor comprising a group III atom.
27. The method of claim 20 , wherein the Group III-V semiconductor nanostructures comprise InN, InP, InAs, InSb, Gall, GaP, GaAs, GaSb, AlN, AlP, AlAs, or AlSb.
28. The method of claim 26 , wherein the first precursor comprises a trialkyl or triaryl substituted Group V atom, the second precursor comprises a Group III halide, and the by-product comprises an alkyl or aryl halide.
29. The method of claim 28 , wherein the Group V atom is N, P, As, Sb, or Bi, and the Group III halide comprises B, Al, Ga, In, or Tl and F, Cl, Br, I, or At.
30. The method of claim 28 , wherein the by-product comprises chlorooctane, bromooctane, benzylbromide, benzyliodide, or benzylchloride.
31. The method of claim 28 , wherein the first precursor is trioctylphosphine, the second precursor is InCl 3 , and the by-product is chlorooctane.
32. The method of claim 28 , wherein the first precursor is trioctylphosphine, the second precursor is InBr 3 , and the by-product is bromooctane.