Display device

1. A display device, comprising:

a first substrate;

a first transistor disposed on the first substrate, wherein the first transistor comprises a first gate electrode, a first drain electrode, a first source electrode, and an oxide semiconductor layer, the oxide semiconductor layer is oppositely disposed on the first gate electrode, and the first drain electrode and the first source electrode are electrically connected to the oxide semiconductor layer; and

a second transistor disposed on the first substrate, wherein the second transistor comprises a second gate electrode, a second drain electrode, a second source electrode, and a silicon semiconductor layer, the second gate electrode is oppositely disposed on the silicon semiconductor layer, the second drain electrode and the second source electrode are electrically connected to the silicon semiconductor layer, and the first gate electrode is electrically connected to one of the second drain electrode and the second source electrode,

wherein the silicon semiconductor layer comprises low-temperature polycrystalline silicon, the oxide semiconductor layer comprises indium, gallium, and oxygen; and a ratio of an atomic percentage of oxygen to a sum of atomic percentages of indium and gallium in the oxide semiconductor layer is greater than or equal to 1 and less than or equal to 3.

2. The display device of claim 1 , wherein the oxide semiconductor layer has a first region and a second region, the first region is between the second region and the first substrate, and a concentration of indium in the first region is greater than a concentration of indium in the second region.

3. The display device of claim 2 , wherein a concentration of gallium in the first region is less than a concentration of gallium in the second region.

4. The display device of claim 3 , wherein, the first source electrode and the first drain electrode are disposed on the oxide semiconductor layer, and the first source electrode and the first drain electrode contact the second region.

5. The display device of claim 2 , wherein the oxide semiconductor layer further comprises zinc, and a concentration of zinc in the first region is greater than a concentration of zinc in the second region.

6. The display device of claim 1 , wherein the oxide semiconductor layer further comprises zinc, and a ratio of a sum of atomic percentages of indium and gallium to an atomic percentage of zinc in the oxide semiconductor layer is greater than or equal to 1 and less than or equal to 3.

7. The display device of claim 1 , further comprising a gate insulating layer disposed below the oxide semiconductor layer and a passivation layer disposed on the oxide semiconductor layer, wherein the gate insulating layer and the passivation layer respectively comprises silicon oxide, and an oxygen concentration of the silicon oxide in the gate insulating layer is lower than an oxygen concentration of the silicon oxide in the passivation layer.

8. The display device of claim 1 , wherein the second drain electrode and the second source electrode are electrically connected to the silicon semiconductor layer through via holes respectively.

9. A touch display device, comprising:

a touch panel; and

a display device integrated with the touch panel, and the display device comprising:

a first substrate;

a first transistor disposed over the first substrate, wherein the first transistor comprises a first gate electrode, a first drain electrode, a first source electrode, and an oxide semiconductor layer, the oxide semiconductor layer is oppositely disposed on the first gate electrode, and the first drain electrode and the first source electrode are electrically connected to the oxide semiconductor; and

a second transistor disposed on the first substrate, wherein the second transistor comprises a second gate electrode, a second drain electrode, a second source electrode, and a silicon semiconductor layer, wherein the second gate electrode is oppositely disposed on the silicon semiconductor layer, the second drain electrode and the second source electrode are electrically connected to the silicon semiconductor layer, and the first gate electrode is electrically connected to one of the second drain electrode and the second source electrode,

wherein the silicon semiconductor layer comprises low-temperature polycrystalline silicon, the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen; a ratio of an atomic percentage of oxygen to a sum of atomic percentages of indium and gallium in the oxide semiconductor layer is greater than or equal to 1 and less than or equal to 3.

10. The touch display device of claim 9 , wherein the oxide semiconductor layer has a first region and a second region, the first region is between the second region and the first substrate, and a concentration of indium in the first region is greater than a concentration of indium in the second region.

11. The touch display device of claim 10 , wherein a concentration of gallium in the first region is less than a concentration of gallium in the second region.

12. The touch display device of claim 11 , wherein the first source electrode and the first drain electrode are disposed on the oxide semiconductor layer, and the first source electrode and the first drain electrode contact the second region.

13. The touch display device of claim 10 , wherein a concentration of zinc in the first region is greater than a concentration of zinc in the second region.

14. The touch display device of claim 9 , further comprising a gate insulating layer disposed below the oxide semiconductor layer and a passivation layer disposed on the oxide semiconductor layer, wherein the gate insulating layer and the passivation layer respectively comprises silicon oxide, and an oxygen concentration of the silicon oxide in the gate insulating layer is lower than an oxygen concentration of the silicon oxide in the passivation layer.

15. The touch display device of claim 9 , wherein the second drain electrode and the second source electrode are electrically connected to the silicon semiconductor layer through via holes respectively.