IMAGING DEVICE AND ELECTRONIC APPARATUS
An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.
1 . An imaging device comprising:
a plurality of photoelectric conversion regions including a first photoelectric conversion region that generates a logarithmic output image depending on irradiation light and a second photoelectric conversion region that generates a linear output image depending on irradiation light; and
a first element isolation region that is provided between adjacent first and second photoelectric conversion regions,
wherein the first element isolation region surrounds at least one of the first and second photoelectric conversion regions, and
wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region.
2 . The imaging device according to claim 1 , further comprising:
a second element isolation region that is provided between at least one of the photoelectric conversion regions and a pixel circuit region.
3 . The imaging device according to claim 2 , wherein the first and second element isolation regions are configured of a material that blocks a diffusion current.
4 . The imaging device according to claim 2 , wherein a PN junction diode is formed in at least some of the photoelectric conversion regions as a photo-sensor.
5 . The imaging device according to claim 4 , wherein a transfer gate and a floating diffusion are further formed in at least some of the photoelectric conversion regions.