IP Library Granted Patent US 10,032,494
Granted Patent B2
US 10,032,494 · App. 15/492,182 · Granted Jul 24, 2018

Data processing systems and a plurality of memory modules

Inventors: Sung Eun Lee (Icheon-si Gyeonggi-do, KR); Jung Hyun Kwon (Seoul, KR); Jae Sun Lee (Seoul, KR); Jingzhe Xu (Seoul, KR)
Assignee: SK hynix Inc.
G11C7/1072G06F13/1663G06F13/1673G06F13/1684G11C7/1075G11C11/40607
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Quick Facts
Patent No.
US 10,032,494
App. No.
15/492,182
Granted
Jul 24, 2018
Kind
B2
Abstract

A data processing system may include a memory/storage circuit and a host. The memory/storage circuit may include a first memory module and a second memory module. Each of the first and second memory modules may include a controller and a memory device. The host may have access to the memory device of the first memory module and the memory device of the second memory module. Each of the controllers included in the first and second memory modules may be configured to selectively perform any one of a memory operation and a storage operation according to a request of the host.

Claims (51)

1. A data processing system comprising:

a memory and storage (memory/storage) circuit configured to include a first memory module and a second memory module having substantially the same configurations, wherein each of the first and second memory modules include a controller and a memory device; and

a host configured to access to the memory device of the first memory module and the memory device of the second memory module,

wherein each of the controllers included in the first and second memory modules is configured to selectively perform any one of a memory operation and a storage operation according to a request from the host,

wherein each of the controllers of the first and second memory modules includes:

a first interface logic circuit configured to perform the memory operation of the memory device; and

a second interface logic circuit configured to perform the storage operation of the memory device,

wherein, for the memory operation, the first interface logic circuits of the first and second memory modules are activated and the second interface logic circuits of the first and second memory modules are inactivated, and

wherein, for the storage operation, the second interface logic circuits of the first and second memory modules are activated and the first interface logic circuits of the first and second memory modules are inactivated.

2. The data processing system of claim 1 ,

wherein the memory operation corresponds to an operation that stores programs and data into the memory device; and

wherein the storage operation corresponds to an operation that stores data into the memory device.

3. The data processing system of claim 2 ,

wherein the memory operation includes a power-down command or a refresh command.

4. The data processing system of claim 1 , wherein each of the memory devices of the first and second memory modules includes at least one of a phase change RAM (PCRAM) device, a magneto-resistive RAM (MRAM) device, a nano floating gate memory (NFGM) device, a resistive RAM (RRAM) device or a polymer RAM device.

5. The data processing system of claim 1 , further comprising:

a first data bus coupled between the host and the first memory module; and

a second data bus coupled between the host and the second memory module.

6. The data processing system of claim 1 ,

wherein, based on the memory operation and storage operation, the first interface logic circuits and second interface logic circuits of the first and second memory modes are either inactivated to stop controlling the operations of the memory devices or activated to allow controlling the operations of the memory devices.

7. The data processing system of claim 1 , wherein the controller includes:

a first interface logic group configured to include a plurality of first interface logic circuits that perform the memory operation of the memory device based on a memory specification of the memory device; and

a second interface logic group configured to include a plurality of second interface logic circuits that perform the storage operation of the memory device based on a storage specification of the memory device.

8. The data processing system of claim 7 , wherein the memory specification includes a RAM timing, an operation clock, a memory bus width, a channel scheme, a latency, and a serial and parallel (serial/parallel) transmission scheme.

9. A data processing system comprising:

a memory and storage (memory/storage) circuit configured to include a first memory module group and a second memory module group, wherein each of the first and second memory module groups includes a plurality of memory modules having substantially the same configurations and each of the memory modules include a controller and a memory device; and

a host configured to access to the memory device of at least one of the memory modules included in the first and second memory module groups,

wherein each of the controllers included in the first and second memory module groups is configured to selectively perform any one of a memory operation and a storage operation according to a request from the host,

wherein each of the controllers of the first and second memory modules includes:

a first interface logic circuit configured to perform the memory operation of the memory device; and

a second interface logic circuit configured to perform the storage operation of the memory device,

wherein, for the memory operation, the first interface logic circuits of the first and second memory modules are activated and the second interface logic circuits of the first and second memory modules are inactivated, and

wherein, for the storage operation, the second interface logic circuits of the first and second memory modules are activated and the first interface logic circuits of the first and second memory modules are inactivated.

10. The data processing system of claim 9 ,

wherein the memory operation corresponds to an operation that stores programs and data into the memory device; and

wherein the storage operation corresponds to an operation that stores data into the memory device.

11. The data processing system of claim 9 ,

wherein the memory operation includes a power-down command or a refresh command.

12. The data processing system of claim 9 , wherein each of the memory devices of the first and second memory module groups includes at least one of a phase change RAM (PCRAM) device, a magneto-resistive RAM (MRAM) device, a nano floating gate memory (NFGM) device, a resistive RAM (RRAM) device or a polymer RAM device.

13. The data processing system of claim 9 , further comprising:

a plurality of first data buses coupled between the host and the memory modules included in the first memory module group; and

a plurality of second data buses coupled between the host and the memory modules included in the second memory module group.

14. The data processing system of claim 13 ,

wherein the number of first data buses is equal to the number of memory modules included in the first memory module group, and

wherein the number of second data buses is equal to the number of memory modules included in the second memory module group.

15. The data processing system of claim 9 ,

wherein, based on the memory operation and storage operation, the first interface logic circuits and second interface logic circuits of the first and second memory mode groups are either inactivated to stop controlling the operations of the memory devices or activated to allow controlling the operations of the memory devices.

16. The data processing system of claim 9 , wherein each of the controllers includes:

a first interface logic group configured to include a plurality of first interface logic circuits that perform the memory operation of the memory device based on a memory specification of the memory device; and

a second interface logic group configured to include a plurality of second interface logic circuits that perform the storage operation of the memory device based on a storage specification of the memory device.

17. The data processing system of claim 16 , wherein the memory specification includes a RAM timing, an operation clock, a memory bus width, a channel scheme, a latency, and a serial and parallel (serial/parallel) transmission scheme.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067335/0246 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 20, 2017
From: LEE, SUNG EUN; KWON, JUNG HYUN; LEE, JAE SUN; XU, JINGZHE
To: SK HYNIX INC.
Reel/Frame 042078/0166 →
Priority Claims (1)
KR 10-2016-0089127 · Jul 14, 2016 · national
Continuity (1)
Related Publication 20180019007A1 · Jan 18, 2018