Substrate wafer and manufacturing method of a III-nitride semiconductor device
A substrate wafer composed of a hexagonal single crystal material including a C crystalline plane, an A crystalline plane, and an M-axis direction includes a top surface is a C-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction perpendicular to the aforementioned C crystalline plane and including a curvature center; and a second side connecting to the aforementioned first side; and wherein there is a line segment defined by a shortest distance between the aforementioned second side and the aforementioned curvature center, and the aforementioned line segment is not parallel with the aforementioned M-axis direction.
1. A substrate wafer composed of a hexagonal single crystal material comprising a C crystalline plane, an A crystalline plane, and an M-axis direction, comprising:
a top surface being a C-axis plane;
a first side connecting to the top surface and being substantially a curve line viewing from the direction perpendicular to the C crystalline plane; and
a second side connecting to the first side and being substantially a straight line viewing from the direction perpendicular to the C crystalline plane;
wherein the second side is not parallel with the M-axis direction, wherein the hexagonal single crystal material is devoid of GaN material.
2. An epitaxial wafer, comprising:
a substrate wafer according to claim 1 ; and
a plurality of III-nitride light emitting diode units disposed on the top surface.
3. The substrate wafer according to claim 1 , further comprising an included angle which is 5˜20 degrees or 40˜50 degrees between the second side and the M-axis direction.
4. The epitaxial wafer according to claim 2 , further comprising an included angle which is 5˜20 degrees or 40˜50 degrees between the second side and the M-axis direction.
5. The substrate wafer according to claim 1 , wherein the top surface further comprises a plurality of regularly arranged protruding structures.
6. The epitaxial wafer according to claim 2 , wherein the top surface further comprises a plurality of regularly arranged protruding structures.
7. The substrate wafer according to claim 5 , wherein, when viewing from a direction perpendicular to C crystalline plane, each of any six of the plurality of regularly arranged protruding structures further comprises an exterior contour, each of the exterior contour comprises a geometric center respectively, an imaginary regular hexagon is constituted by connecting the six geometric centers, and each side of the imaginary hexagon is neither parallel with nor perpendicular to the second side.
8. The epitaxial wafer according to claim 6 , wherein, when viewing from a direction perpendicular to C crystalline plane, each of any six of the plurality of regularly arranged protruding structures further comprises an exterior contour, each of the exterior contour comprises a geometric center respectively, an imaginary regular hexagon is constituted by connecting the six geometric centers, and each side of the imaginary hexagon is neither parallel with nor perpendicular to the second side.
9. The epitaxial wafer according to claim 2 , further comprising a plurality of first-direction cutting streets parallel with each other III-nitride, and wherein the first-direction cutting streets are parallel with the first side.
10. The substrate wafer according to claim 1 , wherein the hexagonal single crystal material comprises sapphire.
11. An epitaxial wafer, comprising:
a substrate composed of a hexagonal single crystal material comprising a C crystalline plane, an A crystalline plane, and an M-axis direction, comprising:
a top surface being a C-axis plane;
a first side connecting to the top surface and being substantially a curve line viewing from the direction perpendicular to the C crystalline plane; and
a second side connecting to the first side and being substantially a straight line viewing from the direction perpendicular to the C crystalline plane, wherein the second side is not parallel with the M-axis direction; and a light emitting diode unit disposed on the top surface, comprising an n-type layer, a light-emitting layer, and a p-type layer, wherein the n-type layer, the light-emitting layer and the p-type layer comprises respectively III-nitride material; wherein the hexagonal single crystal material of the substrate wafer is different from the III-nitride material.