Semiconductor module and stack arrangement of semiconductor modules
View Patent ↗A semiconductor module and a stack arrangement of semiconductor modules is proposed. The semiconductor module comprises an insulated gate bipolar transistor, a wide band-gap switch, a base plate, and a press device. The insulated gate bipolar transistor and the wide band-gap switch are connected in parallel and are each mounted with a first planar terminal to a side of the base plate. Further, a second planar terminal of the insulated gate bipolar transistor and a second planar terminal of the wind band-gap switch are connected with an electrically conductive connection element, and the press device is arranged on the second planar terminal of the insulated gate bipolar transistor. Hence, when arranging the semiconductor modules in a stack arrangement, any press force is primarily applied to the insulated gate bipolar transistors of the semiconductor modules.
1. A semiconductor module, comprising:
an insulated gate bipolar transistor;
a wide band-gap switch;
a base plate; and
a press device,
wherein the insulated gate bipolar transistor comprises a first planar terminal and a second planar terminal,
wherein the wide band-gap switch comprises a first planar terminal and a second planar terminal,
wherein the insulated gate bipolar transistor and the wide band-gap switch are connected in parallel, whereby for the parallel connection the first planar terminal of the insulated gate bipolar transistor and the first planar terminal of the wide band-gap switch are mounted to the same side of the base plate and the second planar terminal of the insulated gate bipolar transistor and the second planar terminal of the wide band-gap switch are connected with an electrically conductive connection element,
wherein the press device is arranged on the second planar terminal of the insulated gate bipolar transistor, and
wherein the semiconductor module further comprising at least one gate pad for connecting a gate of the insulated gate bipolar transistor and a gate of the wide band-gap switch in order to interconnect the gate of the insulated gate bipolar transistor and the gate of the wide band-gap switch, which gate pad is insulated mounted on the same side of the base plate as the first planar terminal of the insulated gate bipolar transistor and the first planar terminal of the wide band-gap switch.
2. The semiconductor module according to claim 1 ,
wherein the first planar terminal of the insulated gate bipolar transistor is a collector and the first planar terminal of the wide band-gap switch is a drain, and/or
wherein the second planar terminal of the insulated gate bipolar transistor is an emitter and the second planar terminal of the wide band-gap switch is a source.
3. The semiconductor module according to claim 2 , wherein the connection element is at least one of a wire bond and a ribbon bond.
4. The semiconductor module according to claim 3 , wherein the gate of the insulated gate bipolar transistor and/or the gate of the wide band-gap switch is connected to the gate pad with at least one of a wire bond and a ribbon bond.
5. The semiconductor module according to claim 2 , wherein the gate of the insulated gate bipolar transistor and/or the gate of the wide band-gap switch is connected to the gate pad with at least one of a wire bond and a ribbon bond.
6. The semiconductor module according to claim 2 , wherein the wide band-gap switch is a voltage controlled unipolar switch; and/or wherein the wide band-gap switch is a MOSFET.
7. The semiconductor module according to claim 1 , wherein the connection element is at least one of a wire bond and a ribbon bond.
8. The semiconductor module according to claim 7 , wherein the gate of the insulated gate bipolar transistor and/or the gate of the wide band-gap switch is connected to the gate pad with at least one of a wire bond and a ribbon bond.
9. The semiconductor module according to claim 1 , wherein the gate of the insulated gate bipolar transistor and/or the gate of the wide band-gap switch is connected to the gate pad with at least one of a wire bond and a ribbon bond.
10. The semiconductor module according to claim 1 , wherein the insulated gate bipolar transistor is a BIGT or an RC-IGBT.
11. The semiconductor module according to claim 1 , wherein the wide band-gap switch is a voltage controlled unipolar switch; and/or
wherein the wide band-gap switch is a MOSFET.
12. The semiconductor module according to claim 1 , wherein the wide band-gap switch is based on silicon carbide or gallium nitride.
13. The semiconductor module according to claim 1 , wherein the press device comprises at least one spring element and/or at least one plate element.
14. The semiconductor module according to claim 1 , wherein the semiconductor module comprises a plurality of insulated gate bipolar transistors and/or a plurality of wide band-gap switches arranged in juxtaposition on the side of the base plate.
15. The semiconductor module according to claim 14 ,
wherein a number of the plurality of insulated gate bipolar transistors is connected to a single wide band-gap switch, and/or
wherein a number of the plurality of wide band-gap switches is connected to a single insulated gate bipolar transistor.
16. The semiconductor module according to claim 15 , wherein a number of the plurality of wide band-gap switches is interconnected with at least one of a wire bond and a ribbon bond.
17. The semiconductor module according to claim 14 , wherein a number of the plurality of wide band-gap switches is interconnected with at least one of a wire bond and a ribbon bond.
18. The semiconductor module according to claim 1 , further comprising:
an electrically conducting plate arranged opposite of the base plate, fixating the press device on the insulated gate bipolar transistor.
19. The semiconductor module according to claim 1 , further comprising at least one diode.
20. A stack arrangement of semiconductor modules, comprising:
at least a first semiconductor module and at least a second semiconductor module, each of the first semiconductor module and the second semiconductor module comprise:
an insulated pate bipolar transistor;
a wide band-gap switch;
a base plate; and
a press device,
wherein the insulated gate bipolar transistor comprises a first planar terminal and a second planar terminal,
wherein the wide band-gap switch comprises a first planar terminal and a second planar terminal,
wherein the insulated gate bipolar transistor and the wide band-gap switch are connected in parallel, whereby for the parallel connection the first planar terminal of the insulated gate bipolar transistor and the first planar terminal of the wide band-gap switch are mounted to the same side of the base plate and the second planar terminal of the insulated gate bipolar transistor and the second planar terminal of the wide band-gap switch are connected with an electrically conductive connection element,
wherein the press device is arranged on the second planar terminal of the insulated gate bipolar transistor,
wherein the semiconductor module further comprising at least one gate pad for connecting a gate of the insulated gate bipolar transistor and a gate of the wide band-gap switch in order to interconnect the gate of the insulated gate bipolar transistor and the gate of the wide band-gap switch, which gate pad is insulated mounted on the same side of the base plate as the first planar terminal of the insulated gate bipolar transistor and the first planar terminal of the wide band-gap switch, and
wherein the second semiconductor module is arranged on the first semiconductor module, such that the base plate of the second semiconductor module presses onto the press device of the first semiconductor module, which in turn presses on the second planar terminal of the insulated gate bipolar transistor of the first semiconductor module.