Suppression of program disturb with bit line and select gate voltage regulation

1. A memory device comprising:

a flash memory array comprising rows and columns of memory cells, wherein the memory cells in a particular row are coupled to a particular source line and to a particular select-gate (SG) line, and wherein the memory cells in a particular column are coupled to a particular bit line; and

a control circuit coupled to the flash memory array and configured at least to:

regulate both a first voltage, of a selected SG line, and a second voltage, of an unselected bit line, independently of a power supply voltage of the flash memory array; and

adjust at least one of the first voltage and the second voltage based on a measure of an operating temperature of the memory device;

wherein the control circuit is configured to operate the second voltage higher than the power supply voltage.

2. The memory device of claim 1 , wherein a first memory cell is coupled to the selected SG line during a memory operation to program the first memory cell, and a second memory cell is coupled to the unselected bit line during the memory operation, the second memory cell being adjacent to the first memory cell in the same row of the flash memory array.

3. The memory device of claim 2 , wherein during the memory operation the control circuit is configured to regulate the first voltage in a first range of 0.9V to 1.1V and to regulate the second voltage in a second range of 0.4V to 1.2V.

4. The memory device of claim 1 , wherein the control circuit is configured to operate the first voltage lower than the power supply voltage.

5. The memory device of claim 1 , wherein the control circuit is configured with trim values for the first voltage and the second voltage at the time of manufacture of the memory device.

6. The memory device of claim 5 , wherein the trim values are configured for the memory device or for each block of memory cells in the flash memory array.

7. The memory device of claim 1 , wherein the memory cells of the flash memory array are spilt-gate memory cells manufactured as 40 nm nodes.

8. The memory device of claim 1 , wherein the memory cells of the flash memory array are 2T memory cells manufactured as 40 nm nodes.

9. A method for suppression of program disturb, the method comprising:

programming a first memory cell in a flash memory array that comprises rows and columns of memory cells, wherein the memory cells in a particular row are coupled to a particular source line and to a particular select-gate (SG) line, and wherein the memory cells in a particular column are coupled to a particular bit line;

regulating a first voltage of a selected SG line coupled to the first memory cell independently of a power supply voltage of the flash memory array during the programming of the first memory cell;

regulating a second voltage of an unselected bit line coupled to a second memory cell of the flash memory array independently of the power supply voltage during the programming of the first memory cell, wherein the second memory cell is adjacent to the first memory cell in the same row of the flash memory array;

wherein regulating the second voltage comprises operating the second voltage higher than the power supply voltage; and

adjusting at least one of the first voltage and the second voltage based on a measure of an operating temperature of the flash memory array.

10. The method of claim 9 , wherein regulating the first voltage comprises operating the first voltage lower than the power supply voltage.

11. The method of claim 9 , wherein the first voltage is in a range of 0.9V to 1.1V.

12. The method of claim 9 , wherein the second voltage is in a range of 0.4V to 1.2V.

13. The method of claim 9 , wherein to suppress the program disturb at the second memory cell during the programming of the first memory cell, the method comprises:

regulating the first voltage in a first range of 0.9V to 1.1V;

regulating the second voltage in a second range of 0.4V to 1.2V.

14. The method of claim 9 , wherein trim values for the first voltage and the second voltage are configured at the time of manufacture of a non-volatile memory device that comprises the flash memory array, wherein the trim values are configured for the non-volatile memory device or for each block of memory cells in the flash memory array.

15. The method of claim 9 , wherein adjusting at least one of the first voltage and the second voltage comprises sensing the measure of the operating temperature of the flash memory array.

16. A system comprising:

a power supply configured to provide a power supply voltage; and

a flash memory array coupled to the power supply to receive the power supply voltage, the flash memory array comprising rows and columns of memory cells, wherein the memory cells in a particular row are coupled to a particular source line and to a particular select-gate (SG) line, and wherein the memory cells in a particular column are coupled to a particular bit line;

wherein the flash memory array comprises a control circuit configured at least to:

regulate, independently of the power supply voltage, both a first voltage of a selected SG line and a second voltage of an unselected bit line; and

adjust at least one of the first voltage and the second voltage based on a measure of an operating temperature of the flash memory array;

wherein the control circuit is configured to operate the second voltage higher than the power supply voltage.

17. The system of claim 16 , further comprising a processing device coupled to the flash memory array.

18. The system of claim 17 , wherein the power supply, the flash memory array, and the processing device are disposed on the same semiconductor substrate.