Barrier layer for correlated electron material

1. A method, comprising:

forming a layer of substantially conductive material over a correlated electron material to prevent diffusion of a dopant from the correlated electron material, including forming the layer of substantially conductive material on one or more edges of an etched stack including the correlated electron material and including forming the layer of substantially conductive material between an electrode and the correlated electron material.

2. The method of claim 1 , wherein the dopant comprises carbon.

3. The method of claim 1 , wherein the forming the layer of substantially conductive material to prevent diffusion of the dopant from the correlated electron material comprises forming the layer of substantially conductive material to prevent diffusion of the dopant from the correlated electron material into the electrode.

4. The method of claim 1 , wherein the substantially conductive material comprises one or more of TiN, TiCN, TiON, RuON, ReOxNy, ReO 3 , RuO 2 , WN, or IrO 2 , or any combination thereof.

5. The method of claim 1 , wherein the correlated electron material comprises a transition metal oxide doped with carbon.

6. The method of claim 1 , further comprising:

forming a second layer of substantially conductive material between the correlated electron material and a second electrode to prevent diffusion of the dopant from the correlated electron material into the second electrode.

7. The method of claim 1 , wherein the layer of substantially conductive material comprises a thickness of no more than 50 Å.

8. An apparatus, comprising:

a layer of substantially conductive material formed over a correlated electron material to prevent diffusion of a dopant from the correlated electron material, the layer of substantially conductive material to include at least a portion formed on one or more edges of an etched stack to include the correlated electron material, the layer of substantially conductive material positioned between an electrode and the correlated electron material.

9. The apparatus of claim 8 , wherein the dopant to comprise carbon.

10. The apparatus of claim 8 , wherein the layer of substantially conductive material to prevent diffusion of the dopant into the electrode.

11. The apparatus of claim 8 , wherein the substantially conductive material to comprise one or more of TiN, TiCN, TiON, RuON, ReOxNy, ReO 3 , RuO 2 , WN, or IrO 2 , or any combination thereof.

12. The apparatus of claim 8 , wherein the correlated electron material to comprise a transition metal oxide doped with carbon, and wherein the layer of substantially conductive material to prevent diffusion of the carbon into the electrode.

13. The apparatus of claim 8 , wherein the layer of substantially conductive material to comprise a thickness of no more than 50 Å.

14. The apparatus of claim 8 , further comprising:

a second layer of substantially conductive material positioned between the correlated electron material and a second electrode to prevent diffusion of the dopant from the correlated electron material into the second electrode.

15. A layer disposed between an electrode and a correlated electron material, comprising:

a substantively conductive material to include one or more of TiN, TiCN, TiON, RuON, ReOxNy, ReO 3 , RuO 2 , WN, or IrO 2 , or any combination thereof, to prevent diffusion of a dopant from the correlated electron material, wherein the layer to include at least a portion formed on one or more edges of an etched stack to include the correlated electron material.

16. The layer of claim 15 , wherein the dopant to comprise carbon.

17. The layer of claim 15 , wherein the layer of substantially conductive material to prevent diffusion of the dopant into the electrode.

18. The layer of claim 15 , wherein the correlated electron material to comprise a transition metal oxide doped with carbon.

19. The layer of claim 15 , wherein the substantially conductive material to comprise a thickness of no more than 50 Å.