Method of forming superconducting wiring layers with low magnetic noise
Fabricating wiring layers above a Josephson junction multi-layer may include removing a part of the multilayer; depositing an insulating layer to overlie a part of the multilayer; and patterning the insulating layer to define a hole in the insulating layer. The method includes depositing a first superconducting wiring layer over a part of the insulating layer and within a portion of the hole. Further, insulating and wiring layers may be deposited and a topmost wiring layer defined. The method includes depositing a passivating layer to overlie the topmost wiring layer. Fabricating a superconducting integrated circuit comprising a hybrid dielectric system may include depositing a high-quality dielectric layer that overlies a superconducting feature. The method includes depositing a second dielectric layer that overlies at least part of the high-quality dielectric layer. The second dielectric layer can comprise a conventional dielectric material.
1. A manufacture, comprising:
a quantum annealer comprising a superconducting integrated circuit, the superconducting integrated circuit comprising a plurality of superconducting flux qubits, and one or more coupling devices, each of the one or more coupling devices providing a respective communicative coupling between qubits of the plurality of qubits, the superconducting integrated circuit comprising:
a substrate;
a Josephson junction multi-layer overlying the substrate, wherein the Josephson junction interrupts a superconducting loop of at least one coupling device of the one or more coupling devices;
a plurality of superconducting wiring layers overlying the Josephson junction multi-layer, the plurality of superconducting wiring layers comprising a top superconducting wiring layer and an inner superconducting wiring layer, the plurality of superconducting wiring layers which comprise material that is superconductive in a range of critical temperatures, the top superconducting wiring layer positioned relatively outward of all other superconducting wiring layers in the plurality of superconducting wiring layers and the inner superconducting wiring layer positioned relatively inward of the top superconducting wiring layer with respect to the substrate, a first superconducting wiring layer of the plurality of superconducting wiring layers comprising at least a portion of a coupling device of the one or more coupling devices; and
a passivating layer overlying the first superconducting layer.
2. The manufacture of claim 1 wherein the passivating layer overlying the first superconducting wiring layer comprises an insulating layer overlying the first superconducting wiring layer.
3. The manufacture of claim 2 wherein the insulating layer overlying the first superconducting wiring layer includes an oxide.
4. The manufacture of claim 1 where the passivating layer overlying the first superconducting wiring layer comprises a superconducting metal layer overlying the first superconducting wiring layer.
5. The manufacture of claim 4 wherein the superconducting metal layer overlying the first superconducting wiring layer includes aluminum.
6. The manufacture of claim 1 , the Josephson junction multi-layer comprising:
an inner superconductive layer, the inner superconductive layer comprising a material that is superconductive in a range of critical temperatures;
a first oxide layer that overlies at least part of the inner superconductive layer; and
a superconductive structure that overlies at least part of the oxide layer, the superconductive structure comprising a material that is superconductive in a range of critical temperatures.
7. The manufacture of claim 1 , further comprising:
at least one dielectric layer that overlies the substrate wherein the at least one dielectric layer comprises at least two dielectric materials, the at least two dielectric materials different from one another.
8. The manufacture of claim 1 , further comprising:
a first dielectric that overlies the substrate;
a superconductive layer that overlies at least part of the first dielectric, the superconductive layer comprising a material that is superconductive in a range of critical temperatures;
a second dielectric that overlies at least part of the superconducting layer; and
a third dielectric that overlies at least part of the second dielectric.
9. The manufacture of claim 8 wherein at least one of the first dielectric and the third dielectric comprises silicon dioxide and the second dielectric comprises silicon nitride.
10. The manufacture of claim 1 wherein the quantum annealer is subject to flux noise arising from impurities in the first superconducting wiring layer, the flux noise which adversely affects a performance of the quantum annealer during an operation of the manufacture, and the passivating layer is selected to at least reduce the flux noise.