Double-layer system comprising a partially absorbing layer, and method and sputter target for producing said layer
A double-layer system includes a metal layer facing away from a viewer and a coating facing the viewer. In order to make the layer system production process as simple as possible and to provide a sputter deposition method that dispenses entirely with the use of reactive gases in the sputtering atmosphere or requires only a small amount thereof, the coating is in the form of an optically partially absorbing layer which has an absorption coefficient kappa of less than 0.7 at a wavelength of 550 nm and a thickness ranging from 30 to 55 nm.
1. A sputter target for producing an optically partially absorbing layer of a double-layer system, the sputter target comprising a target material which contains a first metal Me1 and a second metal Me2 and a third metal Me3,
wherein the first metal Me1 is selected from a group 1 consisting of tin, zinc, indium and mixtures thereof;
wherein the first metal Me1 is present in the form of an oxide, oxynitride, substoichiometric oxide or substoichiometric oxynitride;
wherein the second metal Me2 is selected from a group 2 consisting of Mo, W and alloys thereof that contain at least 50 wt. % of Mo or W; and
wherein the third metal Me3 is selected from a group 3 consisting of niobium, hafnium, titanium, tantalum, vanadium, yttrium, zirconium, aluminum and mixtures thereof, which is present as an oxide, substoichiometric oxide, or substoichiometric oxynitride; and
wherein the content of oxides, substoichiometric oxides or substoichiometric oxynitrides of group 3 is in the range of 2 to 45 vol. %.
2. The sputter target of claim 1 , wherein the content of oxides, substoichiometric oxides or substoichiometric oxynitrides of group 3 is in the range of 10 to 45 vol. %.
3. The sputter target of claim 1 , wherein the metals of group 2 are contained in an amount between 10 and 20 vol. %.
4. A The sputter target of claim 1 , wherein the target material has a density of more than 95% of the theoretical density and a content of impurities of less than 500 wt. ppm, and wherein a reduction degree which is obtained in the oxidic target material arithmetically as a proportion of the second metal Met in metallic phase in the range of 10-20 vol. % if the substoichiometrically existing oxygen on the whole is ascribed to a fully oxidic phase.
5. The sputter target of claim 1 , wherein the second metal Me2 is present as a powder with a d50 value of less than 50 μm.
6. The sputter target of claim 1 , wherein the content of oxides, substoichiometric oxides or oxynitrides of group 3 is in the range of 25 to 40 vol. %.
7. The sputter target of claim 1 , wherein the second metal Me2 is present as a powder with a d50 value of less than 10 μm.
8. A sputter target for producing an optically partially absorbing layer of a double-layer system, the sputter target comprising a target material which contains a first substance and a second substance,
wherein the first substance is an oxide, oxynitride, substoichiometric oxide or substoichiometric oxynitride containing a first metal Me1 selected from a group 1 consisting of tin, zinc, indium and mixtures thereof;
wherein the second substance is a second metal Me2 selected from a group 2 consisting of Mo, W and alloys thereof that contain at least 50 wt. % of Mo or W; and
wherein the target material comprises a homogeneous composition of the first substance and the second substance forming the same, such that the composition of five samples of 1 g each has a standard deviation of each substance of less than 5%, based on the maximum content of the substance, and a homogeneous reduction degree, such that the reduction degree of five samples of 1 g each has a standard deviation in the reduction degree of less than 5%.
9. A sputter target for producing an optically partially absorbing layer of a double-layer system, the sputter target comprising a target material which contains a first metal Me1, a second metal Me2, and a third metal Me3;
wherein the first metal Me1 is selected from a group 1 consisting of tin, zinc, indium and mixtures thereof;
wherein the first metal Me1 is present in the form of an oxide, oxynitride, substoichiometric oxide or substoichiometric oxynitride;
wherein the second metal Me2 is selected from a group 2 consisting of Mo, W and alloys thereof; and
wherein the third metal Me3 is selected from a group 3 consisting of niobium, tantalum, vanadium, yttrium, and mixtures thereof, which is present as an oxide, substoichiometric oxide or substoichiometric oxynitride.
10. The sputter target of claim 9 , wherein the content of oxides, substoichiometric oxides or substoichiometric oxynitrides of group 3 is in the range of 2 to 45 vol. %.
11. The sputter target of claim 9 , wherein the content of oxides, substoichiometric oxides or substoichiometric oxynitrides of group 3 is in the range of 5 to 40 vol. %.