Electronic device and method for producing an electronic device

1. An electronic device comprising:

a first component and a second component; and

a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal;

wherein each of the first component and the second component comprises at least one contact layer; and

wherein, with respect to each of the first component and the second component:

the at least one contact layer is arranged in direct contact with the sinter layer;

the at least one contact layer comprises a second metal different from the first metal;

the at least one contact layer is free of gold; and

the second metal comprises iridium.

2. The device according to claim 1 , wherein the sinter layer is permeable to oxygen.

3. The device according to claim 1 , wherein the sinter layer comprises silver.

4. The device according to claim 1 , wherein the sinter layer comprises copper.

5. The device according to claim 1 , wherein, with respect to each of the first component and the second component, the contact layer comprises a noble metal.

6. The device according to claim 5 , wherein, with respect to each of the first component and the second component, the second metal comprises rhodium in combination with the iridium.

7. The device according to claim 5 , wherein, with respect to each of the first component and the second component, the second metal comprises platinum in combination with the iridium.

8. The device according to claim 1 , wherein, with respect to each of the first component and the second component, the contact layer has a layer thickness of equal to or greater than 5 nm and equal to or less than 500 nm.

9. The device according to claim 1 , wherein, with respect to each of the first component and the second component, the contact layer is located on a layer of an oxidizable material.

10. The device according to claim 9 , wherein, with respect to each of the first component and the second component, the contact layer is located directly on the layer of the oxidizable material.

11. The device according to claim 9 , wherein, with respect to each of the first component and the second component, the oxidizable material comprises titanium, nickel, chromium and/or aluminum.

12. The device according to claim 1 , wherein the first component comprises a first carrier element, which is selected from the group consisting of a lead frame, a plastic carrier, a plastic housing, a ceramic carrier, a circuit board, a metal core board and a combination thereof.

13. The device according to claim 1 , wherein the second component is an electronic semiconductor chip.

14. A method for producing the electronic device according to claim 1 , the method comprising:

placing a sintering material between the first component and the second component; and

sintering the sintering material thereby forming the sinter layer between the first and second components.

15. An electronic device comprising:

a first component and a second component; and

a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal;

wherein at least one of the first component and the second component comprises at least one contact layer;

wherein the at least one contact layer is arranged in direct contact to the sinter layer;

wherein the at least one contact layer comprises a second metal different from the first metal, and the at least one contact layer is free of gold;

wherein the second metal comprises iridium; and

wherein the contact layer is directly located on a layer of an oxidizable material.

16. The device according to claim 15 , wherein the second metal further comprises rhodium in combination with the iridium.