Micro light-emitting diode display panel and manufacturing method
The disclosure provides a micro light-emitting diode display panel. The array substrate is arranged with a plurality of pixels in an array. Each of the pixels at least includes a subpixel of three colors. Each of the subpixels is disposed with at least one μLED chip corresponding to color of the subpixel. Bin levels of the μLED chips of the subpixels with the same color in two adjacent pixels are different and a difference of peak wavelengths >2 nm. The disclosure further provides a manufacturing method, the μLED chips with the corresponding color in the subpixel of the array substrate are transfer printed from the transfer printing plate to corresponding subpixels. The color and the bin level of the μLED chips in each transfer printing are identical. Bin levels of the μLED chips in the sub-pixels with the same color in two adjacent pixels are different.
1. A micro light-emitting diode display panel, comprising an array substrate, the array substrate arranged with a plurality of pixels in an array, each of the pixels at least comprising a subpixel of three colors R, G and B, each of the subpixels disposed with at least one micro light-emitting diode chip corresponding to color of the subpixel, bin levels of the micro light-emitting diode chips of the subpixels with an identical color in two adjacent pixels unequalled and a difference of peak wavelengths >2 nm, so as to arrange the micro light-emitting diode chips of different bin levels in mixture.
2. The micro light-emitting diode display panel according to claim 1 , wherein each of the subpixels is formed by arranging at least two micro light-emitting diode chips with an identical color and different bin levels with the difference of peak wavelengths >2 nm in mixture.
3. The micro light-emitting diode display panel according to claim 1 , wherein the array substrate is compartmentalized to be n distribution regions, R, G and B subpixels in each of the distribution regions respectively adopt arrangement of the micro light-emitting diode chips in m sort of bin levels of corresponding colors in mixture, 2<n<m, m and n are positive integers.
4. The micro light-emitting diode display panel according to claim 3 , wherein the number of micro light-emitting diode chips in each sort of the bin levels in respective distribution regions is m/n.
5. The micro light-emitting diode display panel according to claim 3 , wherein the difference of peak wavelengths of two adjacent micro light-emitting diode chips with the same color in each of the distribution regions is larger than 2 nm.
6. The micro light-emitting diode display panel according to claim 4 , wherein the difference of peak wavelengths of two adjacent micro light-emitting diode chips with the same color in each of the distribution regions is larger than 2 nm.
7. A manufacturing method of a micro light-emitting diode display panel, comprising following steps:
providing an array substrate;
transfer printing micro light-emitting diode chips with corresponding colors on a transfer printing plate to corresponding subpixels in subpixels of R, G, B three colors in pixels of the array substrate, a color and a bin level of the micro light-emitting diode chips in each transfer printing equaled, the bin levels of the micro light-emitting diode chips in the sub-pixels with the same color in two adjacent pixels unequalled and a difference of peak wavelengths >2 nm.
8. The manufacturing method of a micro light-emitting diode display panel according to claim 7 , wherein each of the subpixels at least undergoes transfer printing twice, two micro light-emitting diode chips with the same color in different bin levels with the difference of peak wavelengths >2 nm are arranged in the corresponding subpixel in mixture.
9. The manufacturing method of a micro light-emitting diode display panel according to claim 7 , wherein the array substrate is compartmentalized to be n distribution regions before transfer printing, R, G and B subpixels in each of the distribution regions respectively adopt mixed arrangement of the micro light-emitting diode chips in m sorts of bin levels of corresponding colors, a plurality of micro light-emitting diode chips on the transfer printing plate with the same bin level are respectively arranged to the corresponding subpixel in each of the distribution regions in each transfer printing, until each of the distribution regions is filled with the micro light-emitting diode chips; 2<n<m, m and n are positive integers.
10. The manufacturing method of a micro light-emitting diode display panel according to claim 9 , wherein the number of micro light-emitting diode chips in each sort of the bin levels in respective distribution regions is m/n.
11. The manufacturing method of a micro light-emitting diode display panel according to claim 10 , wherein the difference of peak wavelengths of two adjacent micro light-emitting diode chips with the same color in each of the distribution regions is larger than 2 nm.