Thin film transistor substrate, method for manufacturing thin film transistor substrate, and display panel

1. A display panel comprising:

a substrate; and

a first thin film transistor and a second thin film transistor that are disposed on the substrate,

wherein the first thin film transistor includes a first gate electrode and a first oxide semiconductor layer that is used as a first channel,

the second thin film transistor includes a second gate electrode and a second oxide semiconductor layer that is used as a second channel, and

the first oxide semiconductor layer comprises a first oxide semiconductor material,

the second oxide semiconductor layer comprises a second oxide semiconductor material,

a display element disposed on the substrate;

a plurality of pixels arranged in a matrix in the display element; and

a drive circuit that is disposed on the substrate and drives the display element,

wherein the first oxide semiconductor material has a higher mobility than the second oxide semiconductor material,

the first thin film transistor comprises (i) a switching transistor that is disposed in each of the plurality of pixels and selectively performs switching on the pixel that is to be caused to emit light and (ii) a drive transistor in the drive circuit, and

the second thin film transistor is a drive transistor that is disposed in each of the plurality of pixels and drives a light-emitting element in the pixel.

2. The thin film transistor substrate according to claim 1 ,

wherein the first oxide semiconductor layer is disposed above the first gate electrode,

the first thin film transistor includes a third oxide semiconductor layer disposed on the first oxide semiconductor layer, and

the third oxide semiconductor layer comprises a third oxide semiconductor material that has a lower mobility than the first oxide semiconductor material.

3. The thin film transistor substrate according to claim 2 ,

wherein the third oxide semiconductor material is the second oxide semiconductor material.

4. The thin film transistor substrate according to claim 1 ,

wherein the first thin film transistor includes a fourth oxide semiconductor layer disposed below the first oxide semiconductor layer,

the second thin film transistor includes a fifth oxide semiconductor layer disposed above the second oxide semiconductor layer,

the first gate electrode is disposed above the first oxide semiconductor layer, and

the second gate electrode is disposed below the second oxide semiconductor layer.

5. The thin film transistor substrate according to claim 4 ,

wherein the fourth oxide semiconductor layer comprises the second oxide semiconductor material, and

the fifth oxide semiconductor layer comprises the first oxide semiconductor material.

6. The thin film transistor substrate according to claim 1 ,

wherein the first oxide semiconductor material and the second oxide semiconductor material are different from each other in element structure.

7. The thin film transistor substrate according to claim 1 ,

wherein the first oxide semiconductor material and the second oxide semiconductor material are the same in element structure and different in element ratio.

8. The thin film transistor substrate according to claim 1 , wherein the first oxide semiconductor layer has a substantially uniform thickness.

9. The thin film transistor substrate according to claim 1 , wherein the second oxide semiconductor layer has a substantially uniform thickness.

10. The thin film transistor substrate according to claim 1 , further comprising a channel protection layer over the first oxide semiconductor layer and over the second oxide semiconductor layer.

11. The thin film transistor substrate according to claim 10 , wherein the channel protection layer is a continuous layer over both the first oxide semiconductor layer and the second oxide semiconductor layer.

12. The thin film transistor substrate according to claim 10 , wherein the channel protection layer directly contacts at least one of the first oxide semiconductor layer or the second oxide semiconductor layer.

13. The thin film transistor substrate according to claim 10 , further comprising:

a source electrode extending through the channel protection layer to electrically connect to the first oxide semiconductor layer; and

a drain electrode extending through the channel protection layer to electrically connect to the first oxide semiconductor layer.

14. The thin film transistor substrate according to claim 10 , further comprising:

a source electrode extending through the channel protection layer to electrically connect to the second oxide semiconductor layer; and

a drain electrode extending through the channel protection layer to electrically connect to the second oxide semiconductor layer.

15. The thin film transistor substrate according to claim 1 , wherein a top-most surface of the first oxide semiconductor layer is substantially planar across an entirety of the first oxide semiconductor layer.