Compositions and methods using same for deposition of silicon-containing film

1. A method for depositing a silicon oxide film using flowable chemical vapor deposition, the method comprising:

placing a substrate comprising a surface feature into a reactor wherein the substrate is maintained at one or more temperatures ranging from about −20° C. to about 100° C. and a pressure of the reactor is maintained at 100 torr or less;

introducing at least one compound selected from the group consisting of:

(a) a siloxane compound selected from the group consisting of:

(b) a trisilylamine-based compound selected from the group consisting of:

wherein substituent R is each independently selected from a hydrogen atom; a halide atom; a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group; a linear or branched C 3 to C 12 alkenyl group; a linear or branched C 3 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group;

(c) an organoaminodisilane compound having the following Formula III:

wherein substituents R 1 and R 2 are each independently selected from a hydrogen atom; a halide atom; a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group; a linear or branched C 3 to C 12 alkenyl group; a linear or branched C 3 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group; wherein optionally R 1 and R 2 can be linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; and n=1 or 2;

(d) a cyclosilazane compound having the following Formula IV:

wherein substituents R 1 , R 2 , and R 3 are each independently selected from a hydrogen atom; a halide atom; a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group; a linear or branched C 3 to C 12 alkenyl group; a linear or branched C 3 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group; wherein optionally any one or more of R 1 , R 2 , and R 3 can be linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring and wherein the at least one compound forms an oligomeric polysilazane species that covers at least a portion of the surface feature; and

treating the oligomeric polysilazane species with an oxygen source at one or more temperatures ranging from about 100° C. to about 1000° C. to form the film on at least a portion of the surface feature.

2. The method of claim 1 wherein the oxygen source is selected from the group consisting of water (H 2 O), oxygen (O 2 ), oxygen plasma, ozone (O 3 ), NO, N 2 O, carbon monoxide (CO), carbon dioxide (CO 2 ), N 2 O plasma, carbon monoxide (CO) plasma, carbon dioxide (CO 2 ) plasma, and combinations thereof.

3. A method for depositing a silicon oxide film in a deposition process, the method comprising:

placing a substrate having a surface feature into a reactor which are maintained at one or more temperatures ranging from about −20° C. to about 100° C.;

introducing into the reactor at least one compound selected from the group consisting of:

(a) a siloxane compound selected from the group consisting of:

(b) a trisilylamine-based compounds selected from the group consisting of:

wherein substituent R is each independently selected from a hydrogen atom; a halide atom; a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group; a linear or branched C 3 to C 12 alkenyl group; a linear or branched C 3 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group;

(c) an organoaminodisilane compound having the following Formula III:

wherein substituents R 1 and R 2 are each independently selected from a hydrogen atom; a halide atom; a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group; a linear or branched C 3 to C 12 alkenyl group; a linear or branched C 3 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group; wherein optionally R 1 and R 2 can be linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; and n=1 or 2;

(d) a cyclosilazane compound having the following Formula IV:

wherein substituents R 1 , R 2 , and R 3 are each independently selected from a hydrogen atom; a halide atom; a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group; a linear or branched C 3 to C 12 alkenyl group; a linear or branched C 3 to C 12 alkynyl group; a C 4 to C 10 cyclic alkyl group; and a C 6 to C 10 aryl group; wherein optionally any one or more of R 1 , R 2 , and R 3 can be linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring, wherein optionally any one or more of R 1 , R 2 , and R 3 can be linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring and a nitrogen source wherein the at least one compound reacts with the nitrogen source to form a nitride containing film on at least a portion of the surface feature; and

treating the substrate with an oxygen source at one or more temperatures ranging from about 100° C. to about 1000° C. to form the silicon oxide film on at least a portion of the surface feature to provide the silicon oxide film.

4. The method of claim 3 wherein the nitrogen source is selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen plasma, nitrogen/hydrogen plasma, nitrogen/helium plasma, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon plasma, ammonia/nitrogen plasma, NF3, NF3 plasma, organic amine plasma, and mixtures thereof.

5. The method of claim 3 wherein the deposition process is a plasma enhanced chemical vapor deposition and the plasma is generated in situ.

6. The method of claim 3 wherein the deposition process is a plasma enhanced chemical vapor deposition and the plasma is generated remotely.

7. The method of claim 3 wherein the oxygen source is selected from the group consisting of water (H 2 O), oxygen (O 2 ), oxygen plasma, ozone (O 3 ), NO, N 2 O, carbon monoxide (CO), carbon dioxide (CO 2 ), N 2 O plasma, carbon monoxide (CO) plasma, carbon dioxide (CO 2 ) plasma, and combinations thereof.

8. The method of claim 3 wherein the silicon oxide film was a wet etch rate and the wet etch rate is less than 2.2 times that of a thermal oxide films in dilute HF.

9. The method of claim 3 further comprising: treating the silicon oxide film with at least one selected from plasma, ultraviolet light, infrared light, or combinations thereof.