Compositions and methods using same for deposition of silicon-containing films

1. A composition for depositing a silicon nitride or silicon oxide film, the composition comprising:

at least one silicon precursor compound selected from the group consisting of Formula IIA, Formula IIB, and Formula IID:

wherein substituent R is independently selected from a halide atom, a linear C 1 to C 10 alkyl group; a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group.

2. The composition of claim 1 wherein the at least one silicon precursor compound is at least one compound represented by Formula IIB.

3. A composition for forming a silicon-containing material:

(a) at least one silicon precursor compound having the following Formulae IIA through IID:

wherein substituent R is independently selected from a halide atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group; and

(b) a solvent wherein the solvent has a boiling point and the difference between the boiling point of the solvent and a boiling point of the silicon precursor is 40° C. or less.

4. The composition of claim 3 wherein the solvent is at least one selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, and tertiary aminoether.

5. The composition of claim 3 wherein the solvent is at least one selected from the group consisting of octane, ethylcyclohexane, cyclooctane, and toluene.

6. The composition of claim 1 or 3 wherein the at least one silicon precursor compound is bis(disilylamino)silane.

7. A method for depositing a silicon nitride film on at least a portion of a surface of a substrate, the method comprising:

placing the substrate into a reactor;

introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formula IIA, Formula IIB, and Formula IID:

wherein substituent R is independently selected from a halide atom, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkenyl group, a linear or branched C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group, under conditions sufficient to provide a chemisorbed layer;

c. purging the reactor with a purge gas;

d. introducing a plasma source comprising nitrogen into the reactor to react with at least a portion of the chemisorbed layer; and

e. optionally purge the reactor with an inert gas; and wherein the steps b through e are repeated until a desired thickness of the silicon nitride film is obtained.

8. The method of claim 7 wherein the plasma source is selected from the group consisting of nitrogen plasma, nitrogen/helium plasma, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon/plasma, helium plasma, argon plasma, hydrogen plasma, hydrogen/helium plasma, hydrogen/argon plasma, organic amine plasma, and mixtures thereof.

9. The method of claim 7 wherein the at least one silicon precursor compound comprises bis(disilylamino)silane.

10. The method of claim 7 wherein the plasma in step d is generated at a power density ranging from about 0.01 to about 1.5 W/cm 2 .

11. The method of claim 7 wherein the at least one silicon precursor compound is at least one compound represented by Formula IIB.