Supporting substrate for semiconductor device, semiconductor apparatus comprising the same, and method for manufacturing the same
The present disclosure relates to a method for manufacturing a semiconductor light emitting device, a semiconductor device including the supporting substrate, and a method for manufacturing the supporting substrate, in which the method includes: providing a first substrate having a first face and a second face opposite to the first face; forming a groove in the first substrate in a direction from the first face to the second face; forming a conducting part in the groove; bonding a second substrate to the first face of the first substrate; and forming, on the second face, a first conducting pad to be in electrical communication with the conducting part.
1. A method for manufacturing a semiconductor light emitting apparatus including a first substrate having a first face and a second face opposite to the first face, a groove in a direction from the first face to the second face and a conducting part in the groove, and a semiconductor light emitting chip bonded to the first substrate, the method comprising:
bonding a second substrate made of sapphire to the first face of the first substrate via a bonding layer made of a light reactive material, the first substrate composed of one of a ceramic material, an Al 2 O 3 crystal, an AlN crystal, HTCC, LTCC, an Al 2 O 3 mixture or ceramic material, an Al 2 O 3 —ZrO 2 mixture or ceramic material, and an AlN mixture or ceramic material;
bonding a plurality of semiconductor light emitting chips including the semiconductor light emitting chip to the second face of the first substrate in such a manner that the semiconductor light emitting chip is electrically communicated with the conducting part, with the semiconductor light emitting chip having a third substrate made of Al 2 O 3 , in which the second substrate is located opposite the plurality of semiconductor light emitting chips with respect to the first substrate;
separating the second substrate from the first substrate by removing the bonding layer with an optical method; and
cutting the first substrate in such a manner that the semiconductor light emitting chip is included,
wherein the third substrate and the first substrate differ in thermal expansion coefficient by 2 ppm or less.
2. The method according to claim 1 , wherein the first substrate is a light transmitting substrate.
3. The method according to claim 1 , wherein the first substrate comprises AlN.
4. The method according to claim 1 , wherein the first substrate has lateral faces connecting the first face and the second face, and the lateral faces have a rugged surface away from the first and second faces resulting from a crack created by laser radiation.